Vishay BPV20F Silicon pin photodiode Datasheet

BPV20F
Vishay Telefunken
Silicon PIN Photodiode
Description
BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view
lens. The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs/GaAlAs IR emitters
(l p=950nm).
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
94 8387
Features
D
D
D
D
D
D
Large radiant sensitive area (A=7.5 mm2)
Wide viewing angle ϕ = ± 65 °
Improved sensitivity
Fast response times
TO–92 plastic package with IR filter
Filter designed for 950 nm transmission
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or
TSI...–Series).
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81506
Rev. 2, 20-May-99
Test Conditions
Tamb
t
x 25 °C
x5s
Symbol
VR
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
°C
K/W
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BPV20F
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Reverse Light Current
Temp. Coefficient of Ira
Absolute Spectral Sensitivity
y
Test Conditions
IF = 50 mA
IR = 100 mA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 12 V, f = 1 MHz
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2, l = 950 nm
Ee = 1 mW/cm2,
l = 950 nm, VR = 5 V
Ee = 1 mW/cm2,
l = 950 nm, VR = 10 V
VR = 5 V, l = 870 nm
VR = 5 V, l = 950 nm
Symbol
VF
V(BR)
Iro
CD
RS
Vo
TKVo
Ik
Ira
TKIra
Min
Typ
1
Max
1.3
2
70
400
360
–2.6
55
60
30
60
40
Unit
V
V
nA
pF
W
mV
mV/K
mA
mA
0.1
%/K
NEP
D*
0.35
0.6
±65
950
870...1050
90
4x10–14
6x1012
s(l)
s(l)
ϕ
Rise Time
l=820 nm
VR=10 V, RL=1 kW,
tr
100
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
Fall Time
l=820 nm
VR=10 V, RL=1 kW,
tf
100
ns
Cut–Off Frequency
l=870 nm
VR=12 V, RL=1 kW,
fc
4
MHz
l=950 nm
VR=12 V, RL=1 kW,
fc
1
MHz
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l = 950 nm
Noise Equivalent Power
VR=10 V, l=950 nm
Detectivity
VR=10 V, l=950 nm
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l0.5
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Document Number 81506
Rev. 2, 20-May-99
BPV20F
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
100
Ira – Reverse Light Current ( m A )
I ro – Reverse Dark Current ( nA )
1000
100
10
VR=10V
20
40
60
80
10
0.1 mW/cm2
0.05 mW/cm2
100
Tamb – Ambient Temperature ( °C )
0.1
1
10
100
VR – Reverse Voltage ( V )
94 8410
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
80
CD – Diode Capacitance ( pF )
1.4
I ra rel – Relative Reverse Light Current
l=950nm
0.2 mW/cm2
1
94 8403
VR=5V
l=950nm
1.2
1.0
0.8
0.6
E=0
f=1MHz
60
40
20
0
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
94 8409
100
10
VR=5V
l=950nm
0.1
0.01
0.1
1
Figure 3. Reverse Light Current vs. Irradiance
Document Number 81506
Rev. 2, 20-May-99
100
10
VR – Reverse Voltage ( V )
1.2
1.0
0.8
0.6
0.4
0.2
0
750
10
Ee – Irradiance ( mW / cm2 )
1
Figure 5. Diode Capacitance vs. Reverse Voltage
S ( l ) rel – Relative Spectral Sensitivity
1000
1
0.1
94 8407
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Ira – Reverse Light Current ( m A )
0.5 mW/cm2
0.02 mW/cm2
1
94 8404
1 mW/cm2
94 8408
850
950
1050
1150
l – Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
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BPV20F
Vishay Telefunken
S rel – Relative Sensitivity
0°
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8406
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
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Document Number 81506
Rev. 2, 20-May-99
BPV20F
Vishay Telefunken
Dimensions in mm
9612202
Document Number 81506
Rev. 2, 20-May-99
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BPV20F
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 81506
Rev. 2, 20-May-99
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