BPW46 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 5 x 3 x 6.4 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8632 • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION BPW46 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation. with APPLICATIONS • High speed photo detector PRODUCT SUMMARY Ira (mA) ϕ (deg) λ0.1 (nm) 50 ± 65 430 to 1100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view COMPONENT BPW46 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW46 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 60 V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 394 For technical questions, contact: [email protected] Document Number: 81524 Rev. 1.5, 08-Sep-08 BPW46 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 TYP. MAX. UNIT VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF Reverse dark current Diode capacitance V pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K µA EA = 1 klx Ik 70 Ee = 1 mW/cm2, λ = 950 nm Ik 47 µA Temperature coefficient of Vk Ee = 1 mW/cm2, λ = 950 nm TKVk 0.1 %/K EA = 1 klx, VR = 5 V Ira 75 µA Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 50 µA Short circuit current 40 Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 900 nm λ0.1 430 to 1100 nm VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Fig. 1 - Reverse Dark Current vs. Ambient Temperature VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Tamb - Ambient Temperature (°C) Document Number: 81524 Rev. 1.5, 08-Sep-08 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 395 BPW46 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 80 CD - Diode Capacitance (pF) Ira - Reverse Light Current (µA) 1000 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 1 40 20 0 0.1 10 Ee - Irradiance (mW/cm2) 94 8417 E=0 f = 1 MHz 60 1 10 100 VR - Reverse Voltage (V) 948407 Fig. 6 - Diode Capacitance vs. Reverse Voltage Fig. 3 - Reverse Light Current vs. Irradiance S ( λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V 1 0.1 101 102 103 0.8 0.6 0.4 0.2 0 104 EA - Illuminance (lx) 94 8418 1.0 350 550 Fig. 4 - Reverse Light Current vs. Illuminance 750 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° 1 mW/cm2 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 1150 950 λ - Wavelength (nm) 94 8420 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 λ = 950 nm 1 0.1 94 8419 1 10 0.9 50° 0.8 60° 70° 0.7 100 VR - Reverse Voltage (V) Fig. 5 - Reverse Light Current vs. Reverse Voltage www.vishay.com 396 40° 1.0 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 0.6 0.4 0.2 0 94 8406 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement For technical questions, contact: [email protected] Document Number: 81524 Rev. 1.5, 08-Sep-08 BPW46 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C technical drawings according to DIN specifications 3 - 0.2 A - 0.2 (0.7) 7.2 ± 0.2 (3.2) Sensitive area 20.2 < 0.7 - 0.8 9.3 ± 0.2 6.4 ± 0.3 5 < 0.65 Area not plane 1.5 0.45 ± 0.05 2.54 nom. 0.95 ± 0.2 0.4 ± 0.05 Drawing-No.: 6.544-5109.01-4 Issue:1; 01.07.96 96 12196 Document Number: 81524 Rev. 1.5, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 397 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1