BPW82 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to 950 nm emitters 94 8480 • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS DESCRIPTION • High speed detector for infrared radiation BPW82 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. • Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY Ira (µA) ϕ (deg) λ0.5 (nm) 45 ± 65 790 to 1050 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view COMPONENT BPW82 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPW82 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C t≤5s Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified www.vishay.com 406 For technical questions, contact: [email protected] Document Number: 81529 Rev. 1.6, 08-Sep-08 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 TYP. MAX. UNIT VR = 10 V, E = 0 Iro 2 30 nA VR = 0 V, f = 1 MHz, E = 0 CD 70 Reverse dark current Diode capacitance V pF VR = 3 V, f = 1 MHz, E = 0 CD 25 Open circuit voltage Ee = 1 mW/cm2, λ = 870 nm Vo 350 mV Short circuit current Ee = 1 mW/cm2, λ = 870 nm Ik 38 µA Reverse light current Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V Ira 45 µA 43 40 pF Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λp 950 nm λ0.5 790 to 1050 nm VR = 10 V, λ = 870 nm NEP 4 x 10-14 W/√Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Document Number: 81529 Rev. 1.6, 08-Sep-08 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 407 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors 1.2 S(λ)rel - Relative Spectral Sensivity 100 10 VR = 5 V λ = 950 nm 1 0.1 0.01 0.1 0.6 0.4 0.2 850 Fig. 3 - Reverse Light Current vs. Irradiance 950 0° 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 Srel - Relative Radiant Sensitivity I ra - Reverse Light Current (µA) 10° 20° 30° mW/cm2 0.5 mW/cm2 λ = 950 nm 1150 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 1 1050 λ - Wavelength (nm) 94 8426 E e - Irradiance (mW/cm²) 94 8414 0.8 0.0 750 10 1 1.0 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1000 80° 1 0.1 94 8415 1 10 100 V R - Reverse Voltage (V) 0.6 0.4 0.2 0 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 408 For technical questions, contact: [email protected] Document Number: 81529 Rev. 1.6, 08-Sep-08 BPW82 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters ± 0.2 4 ± 0.2 5 A C 6.8 (2.8) < 0.5 ± 0.3 Chip position (2.05) 19.8 - 0.8 8.9 ± 0.3 Sensitive area Area not plane < 0.65 0.45 + 0.01 - 0.05 2.5 nom. 2.3 0.4 ± 0.2 + 0.1 - 0.05 Drawing-No.: 6.544-5108.01-4 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12195 Document Number: 81529 Rev. 1.6, 08-Sep-08 For technical questions, contact: [email protected] www.vishay.com 409 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1