Vishay BPW85A Silicon npn phototransistor Datasheet

BPW85
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radiation.
The viewing angle of ± 25° makes it insensible to ambient straylight.
Features
D
D
D
D
D
D
D
Fast response times
High photo sensitivity
Standard T–1 (ø 3 mm ) clear plastic package
94 8396
Axial terminals
Angle of half sensitivity ϕ = ± 25°
Suitable for visible and near infrared radiation
Selected into sensitivity groups
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81531
Rev. 3, 16-Nov-99
Test Conditions
x
tp/T = 0.5, tp
10 ms
Tamb
55 °C
x
t
x 3 s, 2 mm from case
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BPW85
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Test Conditions
IC = 1 mA
Symbol
V(BR)CE
Min
70
Typ
Max
Unit
V
1
3
±25
850
620...980
200
nA
pF
deg
nm
nm
V
O
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
ICEO
CCEO
ϕ
lp
l0.5
Ee = 1 mW/cm2,
VCEsat
l = 950 nm, IC = 0.1 mA
VS = 5 V, IC = 5 mA,
RL = 100 W
VS = 5 V, IC = 5 mA,
RL = 100 W
VS = 5 V, IC = 5 mA,
RL = 100 W
0.3
ton
2.0
ms
toff
2.3
ms
fc
180
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Light
g Current Ee=1mW/cm2,
l=950nm, VCE=5V
Type
BPW85A
BPW85B
BPW85C
Symbol
Ica
Ica
Ica
Min
0.8
1.5
3.0
Typ
1.5
2.5
5.0
Max
2.5
4.0
8.0
Unit
mA
mA
mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
I CEO – Collector Dark Current ( nA )
P tot – Total Power Dissipation ( mW )
125
100
75
RthJA
50
25
VCE=20V
102
101
100
0
0
94 8308
103
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
20
94 8304
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
Document Number 81531
Rev. 3, 16-Nov-99
BPW85
Vishay Telefunken
10
1.8
VCE=5V
Ee=1mW/cm2
l=950nm
1.6
BPW 85 B
Ica – Collector Light Current ( mA )
I ca rel – Relative Collector Current
2.0
1.4
1.2
1.0
0.8
0.6
0.5 mW/cm2
1
20
40
60
80
0.1 mW/cm2
0.05 mW/cm2
0.1
l=950nm
100
Tamb – Ambient Temperature ( °C )
94 8239
0.1
10
100
Figure 6. Collector Light Current vs.
Collector Emitter Voltage
10
Ica – Collector Light Current ( mA )
10
Ica – Collector Light Current ( mA )
1
VCE – Collector Emitter Voltage ( V )
94 8276
Figure 3. Relative Collector Current vs.
Ambient Temperature
BPW85B
BPW85C
1
BPW85A
0.1
0.01
0.01
VCE=5V
l=950nm
0.1
Ee – Irradiance (
94 8271
0.5 mW/cm2
1
0.05 mW/cm2
0.1
)
0.1
0.2 mW/cm2
0.1 mW/cm2
0.1
0.05 mW/cm2
0.01
0.1
1
10
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
Document Number 81531
Rev. 3, 16-Nov-99
10
100
Figure 7. Collector Light Current vs.
Collector Emitter Voltage
C CEO – Collector Emitter Capacitance ( pF )
0.5 mW/cm2
1
VCE – Collector Emitter Voltage ( V )
94 8277
Ee=1 mW/cm2
1
BPW 85 C
l=950nm
0.01
10
BPW 85 A
l=950nm
0.2 mW/cm2
0.1 mW/cm2
10
1
mW / cm2
Ee=1 mW/cm2
Figure 4. Collector Light Current vs. Irradiance
Ica – Collector Light Current ( mA )
0.2 mW/cm2
0.01
0
94 8275
Ee=1 mW/cm2
10
f=1MHz
8
6
4
2
0
100
0.1
94 8294
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 8. Collector Emitter Capacitance vs.
Collector Emitter Voltage
www.vishay.de • FaxBack +1-408-970-5600
3 (6)
BPW85
0°
8
VCE=5V
RL=100W
l=950nm
6
S rel – Relative Sensitivity
t on / t off – Turn on / Turn off Time ( m s )
Vishay Telefunken
4
toff
2
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ton
80°
0
0
2
4
6
8
10
12
14
IC – Collector Current ( mA )
94 8293
S ( l ) rel – Relative Spectral Sensitivity
Figure 9. Turn On/Turn Off Time vs. Collector Current
0.4
0.2
0
0.2
0.4
0.6
Figure 11. Relative Radiant Sensitivity vs.
Angular Displacement
1.0
0.8
0.6
0.4
0.2
0
400
94 8348
0.6
94 8295
600
800
l – Wavelength ( nm )
1000
Figure 10. Relative Spectral Sensitivity vs.
Wavelength
www.vishay.de • FaxBack +1-408-970-5600
4 (6)
Document Number 81531
Rev. 3, 16-Nov-99
BPW85
Vishay Telefunken
Dimensions in mm
96 12190
Document Number 81531
Rev. 3, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
5 (6)
BPW85
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6)
Document Number 81531
Rev. 3, 16-Nov-99
Similar pages