Rohm BR93L46-W Microwire bus eeprom Datasheet

Datasheet
Serial EEPROM Series Standard EEPROM
Microwire BUS EEPROM(3-Wire)
BR93Lxx-W
●General Description
BR93Lxx-W is serial EEPROM of serial 3-line interface method
●Features
„ 3-line communications of chip select, serial clock, serial data
input / output (the case where input and output are shared)
„ Actions available at high speed 2MHz clock(2.5V to 5.5V)
„ Speed write available (write time 5ms max.）
„ Same package and pin layout from 1Kbit to 16Kbit
„ 1.8V to 5.5V single power source action
„ Address auto increment function at read action
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code
¾ Write mistake prevention function at low voltage
„ Program cycle auto delete and auto end function
„ Program condition display by READY / BUSY
„ Low current consumption
¾ At write action (at 5V) : 1.2mA (Typ.)
¾ At read action (at 5V) : 0.3mA (Typ.)
¾ At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)
„ TTL compatible( input / outputs)
„ Data retention for 40 years
„ Endurance up to 1,000,000 times
„ Data at shipment all addresses FFFFh
●Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
TSSOP-B8
5.00mm x 6.20mm x 1.71mm
3.00mm x 6.40mm x 1.20mm
SOP- J8
TSSOP-B8J
4.90mm x 6.00mm x 1.65mm
3.00mm x 4.90mm x 1.10mm
SSOP-B8
MSOP8
3.00mm x 6.40mm x 1.35mm
2.90mm x 4.00mm x 0.90mm
DIP-T8
9.30mm x 6.50mm x 7.10mm
Figure.1
●BR93Lxx-W
Package type
SOP8
SOP-J8 SSOP-B8 TSSOP-B8
MSOP8
TSSOPB8J
DIP-T8
RFVM
RFVJ
-
F
RF
FJ RFJ FV RFV FVT RFVT
BR93L46-W
Power source
voltage
1.8V to 5.5V
●
●
●
●
●
●
●
●
●
●
●
128×16
BR93L56-W
1.8V to 5.5V
●
●
●
●
●
●
●
●
●
●
●
256×16
BR93L66-W
1.8V to 5.5V
●
●
●
●
●
●
●
●
●
●
●
8Kbit
512×16
BR93L76-W
1.8V to 5.5V
●
●
●
●
●
●
●
●
●
16Kbit
1K×16
BR93L86-W
1.8V to 5.5V
●
●
●
●
●
●
●
●
●
Capacity
Bit format
Type
1Kbit
64×16
2Kbit
4Kbit
○Product structure：Silicon monolithic integrated circuit
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○This product is not designed protection against radioactive rays
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Datasheet
BR93Lxx-W
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Impressed voltage
VCC
Permissible dissipation
Storage temperature range
Action temperature range
Terminal voltage
Pd
Tstg
Topr
‐
Limits
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
330 (TSSOP-B8)
310 (MSOP8)
310 (TSSOP-B8J)
800(DIP-T8)
-65 to +125
-40 to +85
-0.3 to VCC+0.3
Remarks
Unit
V
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 4.5mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.0mW, to be reduced per 1℃.
mW
When using at Ta=25℃ or higher, 3.3mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 3.1mW, to be reduced per 1℃.
When using at Ta=25℃ or higher, 8.0mW, to be reduced per 1℃
℃
℃
V
●Memory Cell Characteristics(VCC=1.8V to 5.5V)
Parameter
*1
Endurance
Data retention *1
Limit
Typ.
-
Min.
1,000,000
40
Max.
-
Unit
Condition
Times
Years
Ta=25℃
Ta=25℃
○Shipment data all address FFFFh
*1：Not 100％ TESTED
●Recommended Operating Ratings
Parameter
Power source voltage
Input voltage
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Symbol
VCC
VIN
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Limits
1.8 to 5.5
0 to VCC
Unit
V
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Datasheet
BR93Lxx-W
●Electrical Characteristics
(Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40℃ to +85℃)
Limits
Parameter
Symbol
Min.
Typ.
Max.
“L” input voltage 1
VIL1
-0.3
0.8
“L” input voltage 2
VIL2
-0.3
0.2 x VCC
“H” input voltage 1
VIH1
2.0
VCC +0.3
“H” input voltage 2
VIH2
0.7 x VCC
VCC +0.3
“L” output voltage 1
VOL1
0
0.4
“L” output voltage 2
VOL2
0
0.2
“H” output voltage 1
VOH1
2.4
VCC
“H” output voltage 2
VOH2
VCC -0.2
VCC
Input leak current
ILI
-1
1
Output leak current
ILO
-1
1
ICC1
3.0
Current consumption
ICC2
1.5
at action
ICC3
4.5
Standby current
ISB
2
(Unless otherwise specified, VCC =1.8V to 2.5V, Ta=-40℃ to +85℃)
Limits
Parameter
Symbol
Min.
Typ.
Max.
“L” input voltage
VIL
-0.3
0.2 x VCC
“H” input voltage
VIH
0.7 x VCC
VCC+0.3
“L” output voltage
VOL
0
0.2
“H” output voltage
VOH
VCC-0.2
VCC
Input leak current
ILI
-1
1
Output leak current
ILO
-1
1
1.5
ICC1
Current consumption
ICC2
0.5
at action
ICC3
2
Standby current
ISB
2
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Unit
V
V
V
V
V
V
V
V
µA
µA
mA
mA
mA
µA
Unit
V
V
V
V
μA
μA
mA
mA
mA
μA
Condition
4.0V≦VCC≦5.5V
VCC≦4.0V
4.0V≦VCC≦5.5V
VCC≦4.0V
IOL=2.1mA, 4.0V≦VCC≦5.5V
IOL=100μA
IOH=-0.4mA, 4.0V≦VCC≦5.5V
IOH=-100μA
VIN=0V to VCC
VOUT=0V to VCC, CS=0V
fSK=2MHz, tE/W=5ms (WRITE)
fSK=2MHz (READ)
fSK=2MHz, tE/W=5ms (WRAL, ERAL)
CS=0V, DO=OPEN
Condition
IOL=100μA
IOH=-100μA
VIN=0V to VCC
VOUT=0V to VCC, CS=0V
fSK=500kHz, tE/W=5ms (WRITE)
fSK=500kHz (READ)
fSK=500kHz, tE/W=5ms (WRAL, ERAL)
CS=0V, DO=OPEN
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Datasheet
BR93Lxx-W
●Action Timing Characteristics
(Ta=-40℃ to +85℃, VCC=2.5V to 5.5V)
Parameter
Symbol
SK frequency
SK “H” time
SK “L” time
CS “L” time
CS setup time
DI setup time
CS hold time
DI hold time
Data “1” output delay time
Data “0” output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
fSK
tSKH
tSKL
tCS
tCSS
tDIS
tCSH
tDIH
tPD1
tPD0
tSV
tDF
tE/W
Min.
230
230
200
50
100
0
100
-
2.5V≦VCC≦5.5V
Typ.
Max.
2
200
200
150
150
5
Min.
0.8
0.8
1
200
100
0
100
-
1.8V≦VCC≦2.5V
Typ.
Max.
500
0.7
0.7
0.7
200
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
(Ta=-40℃ to +85℃, VCC=1.8V to 2.5V)
Parameter
Symbol
SK frequency
SK “H” time
SK “L” time
CS “L” time
CS setup time
DI setup time
CS hold time
DI hold time
Data “1” output delay time
Data “0” output delay time
Time from CS to output establishment
Time from CS to High-Z
Write cycle time
fSK
tSKH
tSKL
tCS
tCSS
tDIS
tCSH
tDIH
tPD1
tPD0
tSV
tDF
tE/W
Unit
kHz
us
us
us
ns
ns
ns
ns
us
us
us
ns
ms
●Sync Data Input / Output Timing
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
tPD1
t PD0
DO(READ)
tDF
DO(WRITE)
STATUS VALID
○Data is taken by DI sync with the rise of SK.
○At read action, data is output from DO in sync with the rise of SK.
○The status signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area
DO where CS is “H”, and valid until the next command start bit is input. And, while CS is “L”, DO becomes High-Z.
○After completion of each mode execution, set CS “L” once for internal circuit reset, and execute the following action mode.
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Datasheet
BR93Lxx-W
●Block Diagram
Power source voltage detection
Command decode
CS
Control
SK
Clock generation
6bit
7bit
8bit
9bit
10bit
Address
buffer
Command
register
DI
Data
register
DO
High voltage occurrence
Write
prohibition
Address
decoder
16bit
R/W
amplifier
6bit
7bit
8bit
9bit
10bit
1,024 bit
2,048 bit
4,096 bit
8,192 bit
16,384 bit
EEPROM
16bit
Dummy bit
●Pin Configurations
TOP VIEW
TOP VIEW
Vcc
NC
NC
GND
NC
GND
DO
TOP VIEW
DI
Vcc
NC
NC
GND
BR93LXXRF-W:SOP8
BR93LXX-W:DIP-T8
BR93LXXF-W:SOP8
BR93LXXRFJ-W:SOP-J8
BR93LXXFJ-W:SOP-J8
BR93LXXRFV-W:SSOP-B8
BR93LXXFV-W:SSOP-B8*
BR93LXXRFVT-W:TSSOP-B8
BR93LXXFVT-W:TSSOP-B8*
BR93LXXRFVM-W:MSOP8
BR93LXXRFVJ-W:TSSOP-B8J
CS
SK
DI
DO
NC
Vcc
CS
SK
CS
SK
DI
DO
*BR93L46/56/66-W
●Pin Descriptions
Pin name
I/O
Function
VCC
-
Power source
GND
-
All input / output reference voltage, 0V
CS
Input
Chip select input
SK
Input
Serial clock input
DI
Input
Start bit, ope code, address, and serial data input
DO
Output
NC
-
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Serial data output, READY / BUSY internal condition display output
Non connected terminal, Vcc, GND or OPEN
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Datasheet
BR93Lxx-W
●Typical Performance Curves
(The following characteristic data are typ. values.)
Figure 2. H input voltage VIH (CS,SK,DI)
Figure 3. L input voltage VIL (CS,SK,DI)
Figure 4. L output voltage VOL-IOL (Vcc=1.8V)
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Figure 5.
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L output voltage VOL-IOL (Vcc=2.5V)
TSZ02201-0R2R0G100390-1-2
15.Oct.2013 Rev.002
Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 6.
Figure 7. H output voltage VOH-IOH
(Vcc=1.8V)
L output voltage VOL-IOL
(Vcc=4.0V)
Figure 9. H output voltage VOH-IOH (Vcc=4.0V)
Figure 8. H output voltage VOH-IOH (Vcc=2.5V)
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 10. Input leak current ILI (CS,SK,DI)
Figure 11. Output leak current ILO (DO)
Figure 13. Consumption current at READ action
ICC2 (READ, fSK=2MHz)
Figure 12. Current consumption at WRITE action
ICC1 (WRITE, fSK=2MHz)
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 14. Consumption current at WRAL action
ICC3 (WRAL, fSK=2MHz)
Figure 15. Current consumption at WRITE action
ICC1 (WRITE, fSK=500kHz)
Figure 17. Consumption current at WRAL action
ICC3 (WRAL, fSK=500kHz)
Figure 16. Consumption current at READ action
ICC2 (READ, fSK=500kHz)
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 18. Consumption current at standby action ISB
Figure 19. SK frequency fSK
Figure 20. SK high time tSKH
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Figure 21. SK low time tSKL
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 22. CS low time tCS
Figure 23. CS hold time tCSH
Figure 24. CS setup time tCSS
Figure 25. DI hold time tDIH
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 27. Data “0” output delay time tPD0
Figure 26. DI setup time tDIS
Figure 29. Time from CS to output establishment tSV
Figure 28. Output data “1” delay time tPD1
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Datasheet
BR93Lxx-W
●Typical Performance Curves‐Continued
Figure 31. Write cycle time tE/W
Figure 30. Time from CS to High-Z tDF
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Datasheet
BR93Lxx-W
●Description of Operations
Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input),DO (serial data
output) ,and CS (chip select) for device selection.
When to connect one EEPROM to a microcontroller, connect it as shown in Figure 32 (a) or Figure 32 (b). When to use
the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 31
(b) (Refer to page 19.), and connection by 3 lines is available.
In the case of plural connections, refer to Figure 32 (c).
Microcontroller
SK
SK
SK
DO
DI
DO
DI
DI
DO
CS
DO
Figure 32-(a) Connection by 4 lines
Figure 32-(b) Connection by 3 lines
CS
SK
DI
DO
SK
CS3
CS1
CS0
SK
DO
DI
BR93LXX
CS
SK
DI
DO
CS
Microcontroller
CS
BR93LXX
CS
SK
DI
DO
Microcontroller
CS
Device 1
Device 2
Device 3
Figure 32-(c) Connection example of plural devices
Figure 32. Connection method with microcontroller
Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called a start bit.
After input of the start bit, input ope code, address and data. Address and data are input all in MSB first manners.
“0” input after the rise of CS to the start bit input is all ignored. Therefore, when there is limitation in the bit width of PIO
of the microcontroller, input “0” before the start bit input, to control the bit width.
●Command Mode
Start
Ope
bit
code
BR93L46-W
BR93L56/66-W
BR93L76/86-W
1
10
A5,A4,A3,A2,A1,A0
A7,A6,A5,A4,A3,A2,A1,A0
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
1
00
1
01
1
00
0
1
****
0
1
******
0
1
********
Write disable (WDS)
1
00
0
0
****
0
0
******
0
0
********
Erase (ERASE)
1
11
Command
Read (READ)
*1
Write enable (WEN)
Write (WRITE)
Write all (WRAL)
*2
*2
Address
1
1
****
A5,A4,A3,A2,A1,A0
A5,A4,A3,A2,A1,A0
1
1
******
A7,A6,A5,A4,A3,A2,A1,A0
A7,A6,A5,A4,A3,A2,A1,A0
1
1
Data
D15 to D0(READ DATA)
********
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(WRITE DATA)
D15 to D0(WRITE DATA)
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
Chip erase (ERAL)
1
00
1 0 ****
1 0 ******
1 0 ********
・ Input the address and the data in MSB first manners.
A7 of BR93L56-W becomes Don't Care.
・ As for *, input either VIH or VIL.
A9 of BR93L76-W becomes Don't Care.
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The start bit means the first “1” input after the rise of CS.
*1 As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and
address data in significant order are sequentially output continuously. (Auto increment function)
*2 When the read and the write all commands are executed, data written in the selected memory cell is automatically deleted, and input data is written.
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Datasheet
BR93Lxx-W
●Timing Chart
1) Read cycle (READ)
～
～
～
～
～
～
CS
～
～
*1
1
4
n
～
～
DI
2
～
～
1
n+1
～
～
SK
Am
0
A1
～
～
1
A0
～
～
～
～
*2
BR93L46-W : n=25, m=5
BR93L56-W
: n=27, m=7
BR93L66-W
BR93L76-W
: n=29, m=9
BR93L86-W
～
～
D14
D1
D0
D15 D14
～
～
D15
～
～
0
DO
High-Z
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as
a start bit, and the following operation is started. This is common to all the commands to described hereafter.
Figure 33. Read cycle
○When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in
sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.
This IC has an address auto increment function valid only at read command. This is the function where after the above
read execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto
increment, keep CS at “H”.
2) Write cycle (WRITE)
～
～
～
～
～
～
tCS
CS
～
～
A1
A0
D15
D14
D1
D0
～
～
Am
～
～
1
～
～
0
～
～
1
n
4
～
～
DI
2
～
～
1
～
～
～
～
SK
STATUS
tSV
BR93L46-W : n=25, m=5
BR93L56-W
: n=27, m=7
BR93L66-W
BR93L76-W
: n=29, m=9
BR93L86-W
BUSY READY
～
～
DO
High-Z
tE/W
Figure 34. Write cycle
○In this command, input 16bit data (D15 to D0) are written to designated addresses (Am to A0). The actual write starts by
the fall of CS of D0 taken SK clock.
When STATUS is not detected, (CS=”L” fixed) Max. 5ms in conformity with tE/W, and when STATUS is detected (CS=”H”),
all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command.
3) Write all cycyle (WRAL)
～
～
～
～
～
～
tCS
CS
1
D15
D14
D1
D0
～
～
0
～
～
0
～
～
0
～
～
1
～
～
DI
n
5
～
～
2
～
～
1
～
～
～
～
SK
STATUS
～
～
～
～
tSV
BR93L46-W : n=25
BR93L56-W
: n=27
BR93L66-W
BR93L76-W
: n=29
BR93L86-W
BUSY READY
～
～
DO
High-Z
Figure 35. Write all cycle
tE/W
○In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word
but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.
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Datasheet
BR93Lxx-W
4) Write enable (WEN) / disable (WDS) cycle
～
～
CS
2
1
3
4
5
6
7
8
～
～
SK
1
0
BR93L46-W : n=9
BR93L56-W
: n=11
BR93L66-W
BR93L76-W
: n=13
BR93L86-W
0
～
～
DI
n
～
～
ENABLE=1 1
DISABLE=0 0
DO
High-Z
Figure 36.
Write enable (WEN) / disable (WDS) cycle
○ At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it is
necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write disable
command is executed or the power is turned off. However, the read command is valid irrespective of write enable / diable
command. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it.
○ When the write enable command is executed after power on, write enable status gets in. When the write disable
command is executed then, the IC gets in write disable status as same as at power on, and then the write command is
canceled thereafter in software manner. However, the read command is executable. In write enable status, even when the
write command is input by mistake, write is started. To prevent such a mistake, it is recommended to execute the write
disable command after completion of write.
5) Erase cycle timing (ERASE)
～
～
～
～
STATUS
～
～
～
～
1
～
～
DI
n
4
2
～
～
1
～
～
SK
A3
A2
A1
A0
BR93L46-W : n=9, m=5
BR93L56-W
: n=11, m=7
BR93L66-W
BR93L76-W
: n=13, m=9
BR93L86-W
～
～
tSV
～
～
BUSY READY
～
～
DO
～
～
Am
～
～
1
～
～
1
～ ～
～
～
tCS
CS
High-Z
tE/W
Figure 37.
Erase cycle timing
○In this command, data of the designated address is made into “1”. The data of the designated address becomes “FFFFh”.
Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.
In ERASE, status can be detected in the same manner as in WRITE command.
6) Chip erase cycle timing (ERAL)
～
～
～
～
STATUS
0
tSV
～
～
1
BR93L46-W : n=9
BR93L56-W
: n=11
BR93L66-W
BR93L76-W
: n=13
BR93L86-W
BUSY READY
～
～
DO
0
～
～
0
～
～
1
n
～
～
DI
4
～
～
2
～
～
～
～
1
～
～
SK
～
～
tCS
CS
High-Z
tE/W
Figure 38.
Chip erase cycle timing
○In this command, data of all addresses is erased. Data of all addresses becomes ”FFFFh”.
Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.
In ERAL, status can be detected in the same manner as in WRITE command.
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●Application
1) Method to cancel each command
○READ
Start bit
Ope code
1bit
2bit
Address*1
(In the case of BR93L46-W)
Data
6bit
16bit
Cancel is available in all areas in read mode.
＊1 Address is 8 bits in BR93L56-W, BR93L-66W
Address is 10 bits in BR93L76-W, BR93L86-W
・Method to cancel：cancel by CS=“L”
Figure 39.
READ cancel available timing
○WRITE, WRAL
・25 Rise of clock
SK
DI
25
24
D1
*2
D0
Enlarged figure
Start bit
Ope code
1bit
Address
2bit
*1
Data
6bit
tE/W
(In the case of BR93L46-W)
16bit
a
b
a：From start bit to 25 clock rise＊2
Cancel by CS=“L”
*1
Address is 8 bits in BR93L56-W, BR93L66-W
Address is 10 bits in BR93L76-W BR93L86-W
27 clocks in BR93L56-W, BR93L66-W
29 clocks in BR93L76-W BR93L86-W
*2
b：25 clock rise and after＊2
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
And when SK clock is input continuously, cancellation is not available.
29 Rise of clock
*2
SK
30
DI
28
D1
29
31
D0
b
c
a
Enlarged figure
*1
1bit
2bit
10bit
(In the case of BR93L86-W)
16bit
a
b
c
a：From start bit to 29 clock rise
Cancel by CS=“L”
b：29 clock rise and after
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
c：30 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously is not available.
Note 1) If Vcc is made OFF in this area, designated address data is
not guaranteed, therefore write once again.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fail in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
Figure 40. WRITE, WRAL cancel available timing
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9 Rise of clock＊2
○ERASE, ERAL
8
SK
DI
9
A1
A0
Enlarged figure
Start bit
Ope code
1bit
Address
2bit
*1
1/2
tE/W
(In the case of BR93L46-W)
6bit
a
b
＊1 Address is 8 bits in BR93L56-W, BR93L66-W
Address is 10 bits in BR93L76-W
a：From start bit to 9 clock rise＊2
Cancel by CS=“L”
b：9 clock rise and after＊2
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
And when SK clock is input continuously, cancellation is not available.
＊2 11 clocks in BR93L56-W, BR93L66-W
13 clocks in BR93L76-W
13 Rise of clock
12
SK
DI
Ope code
1bit
2bit
Address
*1
tE/W
b
15
b
c
Enlarged figure
(In the case of BR93L86-W)
10bit
a
14
D1
a
Start bit
13
*2
c
a：From start bit to 13 clock rise
Cancel by CS=“L”
b：13 clock rise and after
Cancellation is not available by any means. If Vcc is made OFF in this area,
designated address data is not guaranteed, therefore write once again.
c：14 clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is output continuously is not available.
Figure 41.
Note 1) If Vcc is made OFF in this area, designated address data is
not guaranteed, therefore write once again.
Note 2) If CS is started at the same timing as that of the SK rise,
write execution/cancel becomes unstable, therefore, it is
recommended to fail in SK=”L” area.
As for SK rise, recommend timing of tCSS/tCSH or higher.
ERASE, ERAL cancel available timing
2) At standby
○Standby current
When CS is “L”, SK input is “L”, DI input is “H”, and even with middle electric potential, current does not increase.
○Timing
As shown in Figure 42, when SK at standby is “H”, if CS is started, DI status may be read at the rise edge.
At standby and at power ON/OFF, when to start CS, set SK input or DI input to “L” status. (Refer to Figure 42)
If CS is started when SK=”L” or DI=”L”, a start
bit is recognized correctly.
CS=SK=DI=”H”
Wrong recognition as a start bit
CS
CS
Start bit input
SK
SK
DI
DI
Figure 42.
Figure 43.
Wrong action timing
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3) Equivalent circuit
Output circuit
Input citcuit
RESET int.
CSint.
CS
DO
OEint.
Figure 44.
Figure 45.
Output circuit (DO)
Input circuit (CS)
Input circuit
Input circuit
CS int.
CS int.
DI
SK
Figure 46.
Input circuit (DI)
Figure 47.
Input circuit (SK)
4) I/O peripheral circuit
4-1) Pull down CS.
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary. Select an
appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
Rpd ≧
Microcontroller
VOHM
“H” output
VOHM ≧
EEPROM
Rpd
・・・①
IOHM
VIHE
・・・②
Example) When VCC =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
from the equation ①,
VIHE
IOHM
VOHM
Rpd ≧
“L” input
∴
Rpd ≧
2.4
2×10
-3
1.2 [kΩ]
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Figure 48. CS pull down resistance
・VIHE
: EEPROM VIH specifications
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
4-2) DO is available in both pull up and pull down.
Do output become “High-Z” in other READY / BUSY output timing than after data output at read command and write
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to
pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be OPEN.
If DO is OPEN, and at timing to output status READY, at timing of CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this
as a start bit, resets READY output, and DO=”High-Z”, therefore, READY signal cannot be detected. To avoid such
output, pull up DO pin for improvement.
CS “H”
CS
SK
SK
Enlarged
DI
D0
DI
High-Z
READY
DO BUSY
DO
BUSY
High-Z
CS=SK=DI=”H”
When DO=OPEN
Improvement by DO pull up
DO
READY
BUSY
CS=SK=DI=”H”
When DO=pull up
Figure 49. READY output timing at DO=OPEN
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○Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
Rpu ≧
EEPROM
Rpu
VILM
VOLE ≦
IOLE
VOLE
Rpu ≧
“L” output
∴
Rpu ≧
・VOLE
・IOLE
・VILM
VOHE ≧
IOHE
“H” output
Rpd ≧
∴
Figure 51.
-3
2.2 [kΩ]
VOHE
・・・⑤
IOHE
・・・⑥
VIHM
Example) When VCC =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,
VIHM=Vcc×0.7V from the equation ⑤,
VOHE
Rpd
5－0.4
2.1×10
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
Rpd ≧
EEPROM
VIHM
“H” input
・・・④
VILM
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V
or below, and with VILM(=0.8V), the equation ④ is also satisfied.
DO pull up resistance
Microcontroller
・・・③
IOLE
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
“L” input
Figure 50.
Vcc－VOLE
Rpd ≧
5－0.2
-3
0.1×10
48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V
or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
DO pull down resistance
・VOHE
・IOHE
・VIHM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
5) READY / BUSY status display (DO terminal)
(common to BR93L46-W,BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” is output.
R/B display＝“L” (BUSY) = write under execution
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.
（DO status）
R/B display = “H” (READY) = command wait status
（DO status） Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area
CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, status READY output is cancelled, and malfunction and mistake write may be made.
STATUS
CS
SK
CLOCK
DI
WRITE
INSTRUCTION
DO
tSV
High-Z
READY
BUSY
Figure 52. R/B status output timing chart
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6) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control
Microcontroller
EEPROM
line.
DI/O PORT
DI
R
DO
Figure 53. DI, DO control line common connection
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
(1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
“H”
EEPROM SK input
A1
EEPROM DI input
A0
Collision of DI input and DO output
EEPROM DO output
0
High-Z
Microcontroller DI/O port
A1
D15 D14 D13
A0
Microcontroller output
High-Z
Microcontroller input
Figure 54. Collision timing at read data output at DI, DO direct connection
(2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.
～
～
EEPROM SK input
Write command
EEPROM DI input
Write command
EEPROM DO output
Write command
～
～
Write command
～
～
EEPROM CS input
～
～
～
～
～
～
READY
～
～
～
～
BUSY
READY
High-Z
Collision of DI input and DO output
BUSY
Microcontroller output
Microcontroller input
～
～
READY
Write command
～
～
Microcontroller DI/O port
Microcontroller output
Figure 55. Collision timing at DI, DO direct connection
Note) As for the case (2), attention must be paid to the following.
When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is
input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY
output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.
Start bit
CS
Because DI=”H”, set
SK=”L” at CS rise.
SK
DI
READY
DO
High-Z
Figure 56. Start bit input timing at DI, DO direct connection
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○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL
even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence
upon basic operations.
(1) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
VOHM ≦ VIHE
EEPROM
VOHM ≦ IOHM×R + VOLE
DI/O PORT
At this moment, if VOLE=0V,
DI
VOHM ≦ IOHM×R
VOHM
“H” output
R
IOHM
∴
DO
R ≧
VOHM
IOHM
・・・⑦
VOLE
・VIHE
・VOLE
・VOHM
・IOHM
“L” output
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
Figure 57. Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
(2) DO status READY output timing
(When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Conditions
Microcontroller
“L” output
VOLM ≧ VILE
EEPROM
DI/O PORT
DI
VOLM ≧ VOHE – IOLM×R
VOLM
As this moment, VOHE=Vcc
VOLM ≧ Vcc – IOLM×R
R
IOHM
DO
VOHE
Vcc – VOLM
∴
IOLM
“H” output
・VILE
・VOHE
・VOLM
・IOLM
・・・⑧
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller VOL specifications
: Microcontroller IOL specifications
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
From the equation ⑦,
R ≧
R ≧
From the equation⑧,
VOHM
R ≧
IOHM
IOLM
5
5 – 0.4
R ≧
-3
0.4×10
∴
R ≧
Vcc – VOLM
12.5 [kΩ]
-3
2.1×10
・・・⑨
∴
R ≧
2.2 [kΩ]
・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴
R ≧
12.5 [kΩ]
Figure 58. Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)
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7) Notes on power ON/OFF
・At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, mistake write or so. To prevent these, at power ON, set CS “L”. (When CS is in “L” status, all inputs
are cancelled.) And at power decline, owing to power line capacity and so forth, low power status may continue long. At
this case too, owing to the same reason, malfunction, mistake write may occur, therefore, at power OFF too, set CS “L”.
VCC
VCC
GND
VCC
CS
GND
Figure 59. Timing at power ON/OFF
（Bad example）CS pin is pulled up to Vcc.
Bad example
Good example
（Good example）It is “L” at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset, which please note.
In this case, CS becomes “H” (active status), and EEPROM may have malfunction,
mistake write owing to noise and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
○POR citcuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS
is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe
the follwing conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.
tR
VCC
Recommended conditions of tR, tOFF, Vbot
tR
tOFF
Vbot
V bot
10m s or higher 0.3V or below
100m s or below 10m s or higher 0.2V or below
0
○LVCC circuit
t O FF
10m s or below
Figure 60. Rise waveform diagram
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ.=1.2V) or below, it prevent data rewrite.
8) Noise countermeasures
○VCC noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1µF) between IC VCC and GND, At that moment, attach it as close to IC
as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.
○SK noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is
set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the
rise time (tR) of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise
countermeasures. Make the clock rise, fall time as small as possible.
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●Notes for Use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC
may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to IC.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than
that of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may
destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND
owing to foreign matter, IC may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
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●Ordering Information
Product Code Description
B
R
9
3
L
x
x
x
x
-
W
x
x
BUS Type
93：Microwire
Operating temperature
-40℃ to +85℃
Capacity
46=1K
76=8K
56=2K
86=16K
66=4K
Package type
F, RF
: SOP8
FJ, RFJ
: SOP-J8
FV, RFV
: SSOP-B8
FVT, RFVT
: TSSOP-B8
RFVJ
: TSSOP-B8J
RFVM
: MSOP8
Blank
: DIP-T8
Double cell
Package specifications
E2
：reel shape emboss taping
TR
：reel shape emboss taping
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
25/35
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Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information
SOP8
6
5
1 2
3
4
0.3MIN
7
4.4±0.2
6.2±0.3
8
+6°
4° −4°
0.9±0.15
5.0±0.2
(MAX 5.35 include BURR)
0.595
1.5±0.1
+0.1
0.17 -0.05
S
S
0.11
0.1
1.27
0.42±0.1
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
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BR93Lxx-W
●Physical Dimension Tape and Reel Information - Continued
SOP-J8
4.9±0.2
(MAX 5.25 include BURR)
7
6
5
1
2
3
4
0.45MIN
8
3.9±0.2
6.0±0.3
+6°
4° −4°
0.545
0.2±0.1
1.375±0.1
S
0.175
1.27
0.42±0.1
0.1 S
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
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Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information – Continued
SSOP-B8
3.0±0.2
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
0.1
1.15±0.1
0.3MIN
6.4 ± 0.3
4.4 ± 0.2
8
0.15±0.1
S
(0.52)
0.65
0.1 S
+0.06
0.22 −0.04
0.08
M
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
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Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information – Continued
TSSOP-B8J
3.0 ± 0.1
(MAX 3.35 include BURR)
5
1
2
3
4
4±4
0.45±0.15
1PIN MARK
0.95±0.2
6
3.0±0.1
7
+0.05
0.145 −0.03
0.525
S
0.1±0.05
4.9±0.2
0.85±0.05
1.1MAX
8
0.08 S
+0.05
0.32 −0.04
0.08
M
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
29/35
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15.Oct.2013 Rev.002
Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information – Continued
TSSOP-B8
3.0 ± 0.1
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
4±4
1.0±0.2
0.5±0.15
1PIN MARK
0.525
+0.05
0.145 −0.03
S
0.1±0.05
1.2MAX
1.0±0.05
6.4±0.2
4.4±0.1
8
0.08 S
+0.05
0.245 −0.04
0.08
M
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
)
∗ Order quantity needs to be multiple of the minimum quantity.
30/35
TSZ02201-0R2R0G100390-1-2
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Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information – Continued
MSOP8
4.0±0.2
2.8±0.1
8 7 6 5
0.6±0.2
+6°
4° −4°
0.29±0.15
2.9±0.1
(MAX 3.25 include BURR)
1 2 3 4
1PIN MARK
+0.05
0.145 −0.03
0.475
0.08±0.05
0.75±0.05
0.9MAX
S
+0.05
0.22 −0.04
0.08 S
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
∗ Order quantity needs to be multiple of the minimum quantity.
31/35
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Datasheet
BR93Lxx-W
●Physical Dimension Tape and Reel Information – Continued
DIP-T8
9.3±0.3
5
1
4
3.2±0.2 3.4±0.3
0.51Min.
6.5±0.3
8
7.62
0.3±0.1
0°−15°
2.54
0.5±0.1
(Unit : mm)
<Tape and Reel information>
Container
Tube
Quantity
2000pcs
Direction of feed
Direction of products is fixed in a container tube
∗ Order quantity needs to be multiple of the minimum quantity.
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Datasheet
BR93Lxx-W
●Marking Diagrams
SOP8(TOP VIEW)
SOP-J8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
SSOP-B8(TOP VIEW)
TSSOP-B8J(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
TSSOP-B8(TOP VIEW)
1PIN MARK
Part Number Marking
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
DIP-T8 (TOP VIEW)
Part Number Marking
LOT Number
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Datasheet
BR93Lxx-W
●Marking Information
Capacity
1K
2K
4K
8K
16K
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
Product
Name
Marking
L46
RL46
L46
RL46
L46
RL46
R46
L46
RL46
R46
BR93L46
L56
RL56
L56
RL56
L56
RL56
R56
L56
RL56
R56
BR93L56
L66
RL66
L66
RL66
L66
RL66
R66
L66
RL66
R66
BR93L66
L76
RL76
L76
RL76
RL76
Package Type
Orderable Part Number
SSOP-B8
BR93L46F-WE2
BR93L46RF-WE2
BR93L46FJ-WE2
BR93L46RFJ-WE2
BR93L46FV-WE2
BR93L46RFV-WE2
BR93L46RFVJ-WE2
BR93L46FVT-WE2
BR93L46RFVT-WE2
BR93L46RFVM-WTR
BR93L46-W
BR93L56F-WE2
BR93L56RF-WE2
BR93L56FJ-WE2
BR93L56RFJ-WE2
BR93L56FV-WE2
BR93L56RFV-WE2
BR93L56RFVJ-WE2
BR93L56FVT-WE2
BR93L56RFVT-WE2
BR93L56RFVM-WTR
BR93L56-W
BR93L66F-WE2
BR93L66RF-WE2
BR93L66FJ-WE2
BR93L66RFJ-WE2
BR93L66FV-WE2
BR93L66RFV-WE2
BR93L66RFVJ-WE2
BR93L66FVT-WE2
BR93L66RFVT-WE2
BR93L66RFVM-WTR
BR93L66-W
BR93L76F-WE2
BR93L76RF-WE2
BR93L76FJ-WE2
BR93L76RFJ-WE2
BR93L76RFV-WE2
R76
TSSOP-B8J
BR93L76RFVJ-WE2
RL76
R76
BR93L76
L86
RL86
L86
RL86
RL86
TSSOP-B8
MSOP8
DIP-T8
SOP8
SSOP-B8
BR93L76RFVT-WE2
BR93L76RFVM-WTR
BR93L76-W
BR93L86F-WE2
BR93L86RF-WE2
BR93L86FJ-WE2
BR93L86RFJ-WE2
BR93L86RFV-WE2
R86
TSSOP-B8J
BR93L86RFVJ-WE2
RL86
R86
BR93L86
TSSOP-B8
MSOP8
DIP-T8
BR93L86RFVT-WE2
BR93L86RFVM-WTR
BR93L86-W
SOP8
SOP-J8
SSOP-B8
TSSOP-B8J
TSSOP-B8
MSOP8
DIP-T8
SOP8
SOP-J8
SSOP-B8
TSSOP-B8J
TSSOP-B8
MSOP8
DIP-T8
SOP8
SOP-J8
SSOP-B8
TSSOP-B8J
TSSOP-B8
MSOP8
DIP-T8
SOP8
SOP-J8
SOP-J8
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Datasheet
BR93Lxx-W
●Revision History
Date
Revision
31.Aug.2012
15.Oct.2013
001
002
Changes
New Release
Page34 Modify the Marking of MSOP8 pachage of 8K and 16K.
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BR93L56-W - Web Page
Buy
Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BR93L56-W
DIP-T8
2000
50
Tube
inquiry
Yes