ON BRD8011D General purpose transistors(npn silicon) Datasheet

BC846ALT1 Series
BC846, BC847 and BC848 are Preferred Devices
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
COLLECTOR
3
ESD Rating − Machine Model: >400 V
1
BASE
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
Vdc
65
45
30
3
VCBO
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
Vdc
80
50
30
1
2
VEBO
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
2
EMITTER
Unit
VCEO
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
Value
Vdc
SOT−23
CASE 318
STYLE 6
6.0
6.0
5.0
IC
100
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
xxD
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
556
°C/W
RJA
PD
300
mW
2.4
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
xx
D
= Specific Device Code
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 6
1
Publication Order Number:
BC846ALT1/D
BC846ALT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 A, VEB = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
15
5.0
nA
A
hFE
−
−
−
90
150
270
−
−
−
−
110
200
180
290
220
450
420
520
800
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
Figure 1.
http://onsemi.com
2
pF
dB
−
−
−
−
10
4.0
BC846ALT1 Series
BC847, BC848, BC849, BC850
1.0
VCE = 10 V
TA = 25°C
1.5
TA = 25°C
0.9
0.8
1.0
0.8
0.6
0.4
VBE(sat) @ IC/IB = 10
0.7
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
VBE(on) @ VCE = 10 V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat) @ IC/IB = 10
0.1
0.2
0.2
0.5
50
2.0
5.0 10
1.0
20
IC, COLLECTOR CURRENT (mAdc)
100
0
0.1
200
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
0.8
IC = 50 mA
IC = 100 mA
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
Cib
Cob
2.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
40
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
TA = 25°C
3.0
1.0
100
Figure 4. Base−Emitter Temperature Coefficient
10
5.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 3. Collector Saturation Region
7.0
50 70 100
Figure 2. “Saturation” and “On” Voltages
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 6. Current−Gain − Bandwidth Product
http://onsemi.com
3
50
BC846ALT1 Series
BC846
TA = 25°C
VCE = 5 V
TA = 25°C
0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
10
100
1.0
IC, COLLECTOR CURRENT (mA)
0.1 0.2
0.5
0.2
50
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
2.0
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
20
−1.8
VB for VBE
Cib
10
6.0
Cob
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
−55°C to 125°C
−2.2
−2.6
−3.0
f,
T CURRENT−GAIN − BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
2.0
200
−1.4
0.5
0.2
50
10 20
5.0
1.0 2.0
IC, COLLECTOR CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
40
4.0
100
−1.0
Figure 9. Collector Saturation Region
20
200
Figure 8. “On” Voltage
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
100
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC846ALT1 Series
ORDERING INFORMATION
Marking
Package
Shipping†
BC846ALT1
1A
SOT−23
3,000 / Tape & Reel
BC846ALT3
1A
SOT−23
10,000 / Tape & Reel
BC846BLT1
1B
SOT−23
3,000 / Tape & Reel
BC846BLT3
1B
SOT−23
10,000 / Tape & Reel
BC847ALT1
1E
SOT−23
BC847ALT1G
1E
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC847BLT1
1F
SOT−23
3,000 / Tape & Reel
BC847CLT1
1G
SOT−23
BC847CLT1G
1G
SOT−23
(Pb−Free)
BC847CLT3
1G
SOT−23
BC847CLT3G
1G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BC848ALT1
1J
SOT−23
3,000 / Tape & Reel
BC848ALT1G
1J
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC848BLT1
1K
SOT−23
3,000 / Tape & Reel
BC848BLT3
1K
SOT−23
10,000 / Tape & Reel
BC848CLT1
1L
SOT−23
BC848CLT1G
1L
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC849BLT1
2B
SOT−23
3,000 / Tape & Reel
BC849BLT3
2B
SOT−23
10,000 / Tape & Reel
BC849CLT1
2C
SOT−23
3,000 / Tape & Reel
BC849CLT1G
2C
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BC850BLT1
2F
SOT−23
3,000 / Tape & Reel
BC850CLT1
2G
SOT−23
BC850CLT1G
2G
SOT−23
(Pb−Free)
Device
3,000 / Tape & Reel
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com
5
BC846ALT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
A
L
3
1
V
B
2
S
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
BC846ALT1/D
Similar pages