Vishay BRT11-M Optocoupler, phototriac output Datasheet

BRT11/ 12/ 13
Vishay Semiconductors
Optocoupler, Phototriac Output
Features
• ITRMS = 300 mA
• High Static dVcrq/dt < 10,000 V/µs
• Electrically Insulated between Input
e3
and output circuit
• Microcomputer compatible - Very Low Trigger
Current
• Non-zero voltage detectors High input Sensitivity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
A 1
6 MT2
C 2
5 NC
NC 3
4 MT1
i179041
Order Information
Part
BRT12-F
Remarks
600 V VDRM, 1.2 mA IFT, DIP-6
BRT11-H
400 V VDRM, 2 mA IFT, DIP-6
BRT12-H
600 V VDRM, 2 mA IFT, DIP-6
Applications
BRT13-H
800 V VDRM, 2 mA IFT, DIP-6
Industrial controls
Office equipment
Consumer appliances
BRT11-M
400 V VDRM, 3 mA IFT, DIP-6
BRT12-M
600 V VDRM, 3 mA IFT, DIP-6
BRT13-M
800 V VDRM, 3 mA IFT, DIP-6
BRT12-F-X006
600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 6)
BRT12-F-X007
600 V VDRM, 1.2 mA IFT, DIP-6 400 mil
(option 7)
BRT12-H-X006
600 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT12-H-X007
600 V VDRM, 2 mA IFT, SMD-6 (option 7)
BRT12-H-X009
600 V VDRM, 2 mA IFT, SMD-6 (option 9)
BRT13-H-X006
800 V VDRM, 2 mA IFT, DIP-6 400 mil
(option 6)
BRT13-H-X007
800 V VDRM, 2 mA IFT, SMD-6 (option 7)
BRT13-H-X009
800 V VDRM, 2 mA IFT, SMD-6 (option 9)
BRT12-M-X006
600 V VDRM, 3 mA IFT, DIP-6 400 mil
(option 6)
Description
The BRT11/12/13 are AC optocouplers non-zero voltage detectors consisting of two electrically insulated
lateral power ICs which integrate a thyristor system, a
photo detector and noise suppression at the output
and an IR GaAs diode input.
For additional information on the available options refer to
Option Information.
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
1
BRT11/ 12/ 13
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
6
V
Forward continuous current
IF
20
mA
IFSM
1.5
A
Pdiss
30
mW
Surge forward current
t ≤ 10 µs
Power dissipation
Unit
Output
Parameter
Test condition
Repetitive peak off-state voltage
Part
Symbol
Value
Unit
BRT11
VDRM
400
V
BRT12
VDRM
600
V
BRT13
RMS on-state current
Single cycle surge current
50 Hz
Power dissipation
VDRM
800
V
ITRMS
300
mA
ITSM
3
A
Pdiss
600
mW
Coupler
Parameter
Test condition
Symbol
Value
Unit
Ptot
630
mW
Ambient temperature
Tamb
- 40 to + 100
°C
Storage temperature
Tstg
- 40 to + 150
°C
Insulation test voltage
between input/output circuit
(climate in acc. with DIN 40046,
part 2, Nov. 74)
VISO
5300
VRMS
Reference voltage in acc. with
VDE 0110 b
Vref
500
VRMS
Reference voltage in acc. with
VDE 0110 b (insulation group C)
Vref
600
VDC
Max. power dissipation
1)
Creepage resistance (in acc.
with DIN IEC 112/VDE 0303,
part 1)
(group IIIa acc. to DIN VDE
0109)
CTI
175
Insulation resistance
VIO = 500 V, Tamb = 25 ° C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 ° C
RIO
≥ 1011
Ω
DIN humidity category,
DIN 40 040
F
Creepage distance
(input/output circuit)
≥ 7.2
mm
Clearance (input/output circuit)
≥ 7.2
mm
1)
Test AC voltage in acc. with DIN 57883, June 1980
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Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Typ.
Max
1.1
1.35
V
IR
10
µA
Rthja
750
°C/W
Forward voltage
IF = 10 mA
VF
Reverse current
VR = 6 V
Thermal resistance 2) junction - ambient
2)
Min
Unit
Static air, SITAC soldered in pcb or base plate.
Output
Parameter
Test condition
Symbol
Min
dV/dtcr
10
Typ.
Max
Unit
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, TJ = 25 °C
VD = 0.67 VDRM, TJ = 80 °C
dV/dtcr
5
kV/µs
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM, TJ = 25 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq
10
kV/µs
VD = 0.67 VDRM, TJ = 80 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq
5
kV/µs
dI/dtcr
8
A/µs
Critical rate of rise of on-state
current
kV/µs
tp ≤ 5 µs, f 0 100 Hz,
dItp/dt ≤ 8 A/µs
Itp
On-state voltage
IT = 300 mA
VT
2.3
V
Off-state current
TC = 80 °C, VDRM
ID
0.5
100
µA
VD = 10 V
IH
80
500
µA
125
°C/W
Max
Unit
1.2
mA
2
mA
Pulse current
Holding current
Thermal resistance
ambient
2)
2)
junction -
RthJA
2
Rthja
A
Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Trigger current
Test condition
VD = 10 V, H - Versions
IFT
0.4
IFT
0.8
VD = 10 V, M - Versions
Document Number 83689
Rev. 1.4, 11-Apr-05
Min
IFT
∆IFT/∆Tj
Trigger current temperature
gradient
Capacitance (input-output)
Symbol
VD = 10 V, F - Versions
VR = 0 V, f = 1 kHz
CIO
Typ.
7
3
mA
14
µA/°C
2
pF
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BRT11/ 12/ 13
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
tgd=f(IF/IFT25°C)
VD=200V
IFTN=f(tpIF)
IFTN normalized to IFT refering
to tpIF ≥ 1 m
Vop=220V,f= 4 0 ...60Hz typ.
17242
17239
Figure 1. Typical Trigger Delay Time
Figure 4. Pulse Trigger Current
IF = ƒ(VF)
Ptot= (ITRMS)
17240
17243
Figure 2. Power Dissipation 40 to 60 Hz Line Operation
Figure 5. Typical Input Characteristics
IT = ƒ(VT)
ID=f(Tj)
VD=800V
17241
17244
Figure 3. Typical Off-State Current
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Figure 6. Typical Output Characteristics
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
ITRMS = ƒ(TA)
RthJA = 125 K/W 3)
ITRMS = ƒ(TPIN5)
RthJ-PIN5 = 16,5 K/W 4)
17246
17245
Figure 7. Current Reduction
Figure 8. Current Reduction
Package Dimensions in Inches (mm)
3
2
1
4
5
6
pin one ID
.248 (6.30)
.256 (6.50)
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ .
.018 (0.46)
.020 (0.51)
i178014
Document Number 83689
Rev. 1.4, 11-Apr-05
.300 (7.62)
typ.
.048 (1.22)
.052 (1.32)
.130 (3.30)
.150 (3.81)
18°
.033 (0.84) typ.
.033 (0.84) typ.
.100 (2.54) typ
3°–9°
.008 (.20)
.012 (.30)
.130 (3.30)
.150 (3.81)
.300–.347
(7.62–8.81)
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BRT11/ 12/ 13
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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Document Number: 91000
Revision: 18-Jul-08
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