Vishay BRT21M Optocoupler, phototriac output, zero crossing Datasheet

BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
FEATURES
A
1
6 MT2
C
2
5
NC 3
17223
ZCC*
NC
4 MT1
*Zero Crossing Circuit
DESCRIPTION
The BRT21, BRT22, BRT23 product family consists of AC
switch optocouplers with zero voltage detectors with two
electrically insulated lateral power ICs which integrate a
thyrister system, a photo detector and noise suppression at
the output and an IR GaAs diode input.
High input sensitivity is achieved by using an emitter follower
phototransistor and a SCR predriver resulting in an LED
trigger current of less than 2 mA or 3 mA (DC). Inverse
parallel SCRs provide commutating dV/dt greater than
10 kV/µs.
The zero cross line voltage detection circuit consists of two
MOSFETS and a photodiode.
The BRT21/22/23 product family isolates low-voltage logic
from 120, 230, and 380 VAC lines to control resistive,
inductive or capacitive loads including motors, solenoids,
high current thyristers or TRIAC and relays.
• High input sensitivity IFT = 1.0 mA
• ITRMS = 300 mA
• High static dV/dt 10 000 V/µs
• Electrically insulated between input and output
circuit
• Microcomputer compatible
• Trigger current
- (IFT < 1.2 mA) BRT22F, BRT23F,
- (IFT < 2 mA) BRT21H, BRT22H, BRT23H
- (IFT < 3 mA) BRT21M, BRT22M, BRT23M
• Available surface mount and on on tape and reel
• Zero voltage crossing detector
• UL file E52744 system code J
• DIN EN 60747-5-5 available with option 1
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Industrial controls
• Office equipment
• Consumer appliances
ORDER INFORMATION
PART
REMARKS
BRT21H
VDRM ≤ 400 V, DIP-6, IFT = 2.0 mA
BRT21M
VDRM ≤ 400 V, DIP-6, IFT = 3.0 mA
BRT22F
VDRM ≤ 600 V, DIP-6, IFT = 1.2 mA
BRT22H
VDRM ≤ 600 V, DIP-6, IFT = 2.0 mA
BRT22M
VDRM ≤ 600 V, DIP-6, IFT = 3.0 mA
BRT23F
VDRM ≤ 800 V, DIP-6, IFT = 1.2 mA
BRT23H
VDRM ≤ 800 V, DIP-6, IFT = 2.0 mA
VDRM ≤ 800 V, DIP-6, IFT = 3.0 mA
BRT23M
VDRM ≤ 400 V, DIP-6 400 mil (option 6), IFT = 2.0 mA
BRT21H-X006
BRT21H-X007
VDRM ≤ 400 V, SMD-6 (option 7), IFT = 2.0 mA
BRT21M-X006
VDRM ≤ 400 V, DIP-6 400 mil (option 6), IFT = 3.0 mA
BRT22F-X006
VDRM ≤ 600 V, SMD-6 (option 7), IFT = 1.2 mA
BRT22H-X007
VDRM ≤ 600 V, SMD-6 (option 7), IFT = 2.0 mA
BRT22M-X006
VDRM ≤ 600 V, DIP-6 400 mil (option 6), IFT = 3.0 mA
BRT23F-X006
VDRM ≤ 800 V, DIP-6 400 mil (option 6), IFT = 1.2 mA
BRT23F-X007
VDRM ≤ 800 V, DIP-6 400 mil (option 6), IFT = 1.2 mA
BRT23H-X006
VDRM ≤ 800 V, DIP-6 400 mil (option 6), IFT = 2.0 mA
BRT23H-X007
VDRM ≤ 800 V, SMD-6 (option 7), IFT = 2.0 mA
BRT23M-X006
VDRM ≤ 800 V, DIP-6 400 mil (option 6), IFT = 3.0 mA
BRT23M-X007
VDRM ≤ 800 V, SMD-6 (option 7), IFT = 3.0 mA
Note
For additional information on the available options refer to option information.
Document Number: 83690
Rev. 1.5, 07-May-08
For technical questions, contact: [email protected]
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BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
VR
6.0
V
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
INPUT
Reverse voltage
IR = 10 µA
Forward current
Derate from 25 °C
100
mW
1.33
mW/°C
OUTPUT
Peak off-state voltage
ID(RMS) = 70 µA
BRT21
VDM
400
V
BRT22
VDM
600
V
BRT23
VDM
800
V
ITM
300
mA
3.0
A
RMS on-state current
Single cycle surge current
Power dissipation
Pdiss
Derate from 25 °C
600
mW
6.6
mW/°C
5300
VRMS
COUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
t = 1.0 min
VISO
Pollution degree (DIN VDE 0109)
2
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
Isolation resistance
CTI
≥ 175
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Tstg
- 40 to + 100
°C
Tamb
- 40 to + 100
°C
Tsld
260
°C
Storage temperature range
Ambient temperature range
Soldering temperature (2)
max. ≤ 10 s dip soldering
≥ 0.5 mm from case bottom
Ω
Notes
(1) T
amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 10 mA
Reverse current
VR = 6 V
f = 1 MHz, VF = 0 V
MIN.
TYP.
MAX.
UNIT
VF
1.16
1.35
V
IR
0.1
10
µA
CO
25
pF
RthJA
750
K/W
INPUT
Capacitance
Thermal resistance, junction to
ambient
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For technical questions, contact: [email protected]
Document Number: 83690
Rev. 1.5, 07-May-08
BRT21/BRT22/BRT23
Optocoupler, Phototriac Output,
Zero Crossing
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Off-state voltage
ID(RMS) = 70 µA
VD(RMS)
424
460
Repetitive peak off-state voltage
IDRM = 100 µA
VDRM
600
VD = VDRM, Tamb = 100 °C,
IF = 0 mA
ID(RMS)
10
On-state voltage
IT = 300 mA
VTM
1.7
3.0
V
On-state current
PF = 1.0, VT(RMS) = 1.7 V
ITM
300
mA
f = 50 Hz
ITSM
3.0
A
µA/K
OUTPUT
Off-state current
Surge (non-repetitive),
on-state current
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
IF = IFT1, VDRM
Holding current
Latching current
Zero cross inhibit voltage
Turn-on time
Turn-off time
V
V
100
µA
ΔIFT1/ΔTj
7.0
14
ΔIFT2/ΔTj
7.0
14
ΔVDINH/ΔTj
- 20
IDINH
50
200
µA
IH
65
500
µA
VT = 2.2 V
IL
5.0
IF = rated IFT
VIH
15
VRM = VDM = VD(RMS)
ton
35
µA/K
mV/K
mA
25
V
µs
PF = 1.0, IT = 300 mA
toff
VD = 0.67 VDRM, Tj = 25 °C
dV/dtcr
10000
V/µs
VD = 0.67 VDRM, Tj = 80 °C
dV/dtcr
5000
V/µs
VD = 0.67 VDRM,
dI/dtcrq ≤ 15 A/ms, Tj = 25 °C
dV/dtcrq
10000
V/µs
VD = 0.67 VDRM,
dI/dtcrq ≤ 15 A/ms, Tj = 80 °C
dV/dtcrq
5000
V/µs
Critical rate of rise of on-state
dI/dtcr
8.0
A/µs
Thermal resistance, junction to
ambient
RthJA
125
K/W
dVIO/dt
10000
V/µs
CCM
0.01
pF
Critical rate of rise of off-state
voltage
Critical rate of rise of voltage at
current commutation
50
µs
COUPLER
Critical rate of rise of coupled
input/output voltage
IT = 0 A, VRM = VDM = VD(RMS)
Common mode coupling
capacitance
Capacitance (input to output)
Isolation resistance
Trigger current
f = 1.0 MHz, VIO = 0 V
CIO
0.8
pF
VIO = 500 V, Tamb = 25 °C
Ris
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
Ris
≥ 1011
VD = 5.0 V, F - versions
IFT
1.2
mA
VD = 5.0 V, H - versions
IFT
2.0
mA
VD = 5.0 V, M - versions
IFT
3.0
mA
Ω
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83690
Rev. 1.5, 07-May-08
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BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Climatic classification
(according to IEC 68 part 1)
MAX.
UNIT
40/100/21
Comparative tracking index
CTI
175
399
VIOTM
6000
V
VIORM
630
V
PSO
200
mW
ISI
400
mA
TSI
175
°C
Creepage distance
standard DIP-6
7
mm
Clearance distance
standard DIP-6
7
mm
Creepage distance
400 mil DIP-6
8
mm
Clearance distance
400 mil DIP-6
8
mm
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of protective circuits.
POWER FACTOR CONSIDERATIONS
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1
Cs - Shunt Capacitance (µF)
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the high static and commutating
dV/dt with loads between 1.0 and 0.8 power factors. When
inductive loads with power factors less than 0.8 are being
driven, include a RC snubber or a single capacitor directly
across the device to damp the peak commutating dV/dt
spike. Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining in the
turning-off device.
But in the case of a zero voltage crossing optotriac, the
commutating dV/dt spikes can inhibit one half of the TRIAC
from turning on. If the spike potential exceeds the inhibit
voltage of the zero cross detection circuit, half of the TRIAC
will be heldoff and not turn-on. This hold-off condition can be
eliminated by using a snubber or capacitor placed directly
across the optotriac as shown in Figure 1. Note that the value
of the capacitor increases as a function of the load current.
The hold-off condition also can be eliminated by providing a
higher level of LED drive current. The higher LED drive
provides a larger photocurrent which causes the
phototransistor to turn-on before the commutating spike has
activated the zero cross network. Figure 2 shows the
relationship of the LED drive for power factors of less than
1.0. The curve shows that if a device requires 1.5 mA for a
resistive load, then 1.8 times 2.7 mA) that amount would be
required to control an inductive load whose power factor is
less than 0.3.
Cs (µF) = 0.0032 (µF)*10^0.0066 IL (mA)
0.1
Ta = 25 °C, PF = 0.3
IF = 2.0 mA
0.01
0.001
0
iil410_01
50
100 150 200 250 300 350 400
IL - Load Current (mA) (RMS)
Fig. 1 - Shunt Capacitance vs. Load Current
For technical questions, contact: [email protected]
Document Number: 83690
Rev. 1.5, 07-May-08
BRT21/BRT22/BRT23
Optocoupler, Phototriac Output,
Zero Crossing
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
150
IFth Normalized to IFth at PF = 1.0
Ta = 25 °C
1.8
LED - LED Power (mW)
NIFth - Normalized LED
Trigger Current
2.0
1.6
1.4
1.2
1.0
0.8
0.0
0.2
iil410_02
0.4
0.6
0.8
1.0
0
- 60 - 40 - 20
PF - Power Factor
0
20
40
60
80
100
Ta - Ambient Temperature (°C)
iil410_05
Fig. 5 - Maximum LED Power Dissipation
103
1.4
5
1.3
Ta = - 55 °C
1.2
IT (mA)
VF - Forward Voltage (V)
50
1.2
Fig. 2 - Normalized LED Trigger Current vs. Power Factor
Ta = 25 °C
1.1
Tj = 25 °C
100 °C
102
IT = f(VT),
Parameter: Tj
5
1.0
0.9
101
Ta = 85 °C
5
0.8
0.7
0.1
100
1
10
100
IF - Forward Current (mA)
iil410_03
0
1
2
3
4
VT (V)
iil410_06
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 6 - Typical Output Characteristics
10000
400
τ
ITRMS = f(VT),
RthJA = 150 K/W
Device switch
soldered in pcb
or base plate.
Duty Factor
1000
100
0.005
0.01
0.02
0.05
0.1
0.2
ITRMS (mA)
If(pk) - Peak LED Current (mA)
100
t
DF = τ/t
300
200
0.5
100
10
10-6 10-5 10-4 10-3 10-2 10-1 10 0
iil410_04
0
101
t - LED Pulse Duration (s)
Fig. 4 - Peak LED Current vs. Duty Factor, Tau
Document Number: 83690
Rev. 1.5, 07-May-08
0
20
40
60
80
100
TA (°C)
iil410_07
Fig. 7 - Current Reduction
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BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
0.6
400
40 to 60 Hz
Line operation,
Ptot = f(ITRMS)
0.5
Ptot (W)
ITRMS (mA)
300
200
Thermocouple measurement must
be performed potentially separated
to A1 and A2. Measuring junction
as near as possible at the case.
0
50
0.3
0.2
ITRMS = f(TPIN5), RthJ-PIN5 = 16.5 K/W
100
0.4
0.1
0
60
70
80
90
TPIN5 (°C)
iil410_08
0
100
100
12
103
VDINH min. (V)
tgd = f (IFIFT 25 °C), VD = 200 V
f = 40 to 60 Hz, Parameter: Tj
fgd (µs)
Tj = 25 °C
100 °C
V
102
10
8
VDINH min = f (IF/IFT25°C),
parameter: Tj
Device zero voltage
switch can be triggered
only in hatched are
below Tj curves.
6
Tj = 25 °C
100 °C
4
101
100
101
5
5
102
IF/IFT25 °C
iil410_09
300
Fig. 11 - Power Dissipation 40 to 60 Hz Line Operation
Fig. 8 - Current Reduction
5
200
ITRMS (mA)
iil410_11
100
5
101
5
102
IF/IFT25 °C
iil410_12
Fig. 12 - Typical Static Inhibit Voltage Limit
Fig. 9 - Typical Trigger Delay Time
103
IDINH (µs)
Tj = 25 °C
100 °C
1
6
2
5
3
4
102
5
101
5
0.1 µF
220 V~
IDINH = f (IF /IFT 25 °C),
VD = 600 V, Parameter: Tj
100
0
iil410_10
2
4
6
8
10 12 14 16 18 20
Fig. 10 - Typical Inhibit Current
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iil410_13
IF/IFT25 °C
Fig. 13 - 1- Apply a Capacitor to the Supply Pins at the Load-Side
For technical questions, contact: [email protected]
Document Number: 83690
Rev. 1.5, 07-May-08
BRT21/BRT22/BRT23
Optocoupler, Phototriac Output,
Zero Crossing
Vishay Semiconductors
33 Ω
1
6
2
5
3
500 µH
220 V~
22 nF
4
iil410_14
1
6
2
5
3
4
22 nF
220 V~
iil410_15
Fig. 14 - 2 - Connect a Series Resistor to the Output and Bridge
Both by a Capacitor
Fig. 15 - 3 - Connect a Choke of Low Winding Cap. in Series,
e.g., a Ringcore Choke, with Higher Load Currents
TECHNICAL INFORMATION
See Application Note for additional information.
PACKAGE DIMENSIONS in inches (millimeters)
3
2
1
4
5
6
pin one ID
ISO method A
0.248 ( 6.30 )
0.256 (6.50 )
0.37 5 (9.53 )
0.395 (10.03)
0.33 5 (8.50 )
0.343 (8.70 )
0.03 9
(1.00)
min.
4°
typ .
0.018 (0.46)
0.020 (0.51 )
0.300 (7.62)
ref.
0.048 (1.22)
0.052 (1.32)
0.130 (3.30)
0.150 (3.81)
0.0040 (0.102)
0.0098 (0.249)
0.012 (0.30) typ.
0.020 (0.51)
0.040 (1.02)
0.033 (0.84) typ.
0.033 (0.84 ) typ.
15 ° max.
17222
0.100 (2.54) typ.
Option 6
Option 7
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.300 (7.62)
typ.
0.028 (0.7)
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
min.
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
Document Number: 83690
Rev. 1.5, 07-May-08
0.331 (8.4)
min.
0.406 (10.3)
max.
18450-1
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BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number: 83690
Rev. 1.5, 07-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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