CALOGIC BS170L N-channel enhancement-mode mos transistor Datasheet

N-Channel Enhancement-Mode
MOS Transistor
CORPORATION
2N7000 / BS170L
DESCRIPTION
ORDERING INFORMATION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where BV of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
Part
Package
2N7000
BS170L
X2N7000
Plastic TO-92
Plastic TO-92
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
-55oC to +150oC
PIN CONFIGURATION
2N7000
3
3
1 SOURCE
2 GATE
3 DRAIN
2
1
TO-92
(TO-226AA)
2
BOTTOM VIEW
1
BS170L
1
3
1 DRAIN
2 GATE
3 SOURCE
2
3
1 2
1
2
BOTTOM VIEW
CD5
PRODUCT SUMMARY
V(BR)DSS
(V)
rDS(ON)
(Ω)
ID
(A)
2N7000
60
5
0.2
BS170
60
5
0.5
P/N
3
2N7000 / BS170L
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETERS
LIMITS
VDS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±40
ID
Continuous Drain Current
UNITS
V
TA = 25oC
0.2
A
0.13
1
TEST CONDITIONS
IDM
Pulsed Drain Current
PD
Power Dissipation1
TJ
Operating Junction Temperature Range
-55 to 150
Tstg
Storage Temperature Range
-55 to 150
TL
Lead Temperature (1/16" from case for 10 sec.)
TA = 100 oC
0.5
0.4
W
0.16
o
TA = 25oC
TA = 100 oC
C
300
THERMAL RESISTANCE RATINGS
NOTE:
SYMBOL
THERMAL RESISTANCE
LIMITS
UNITS
RthJA
Junction-to-Ambient
312.5
K/W
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS1
SYMBOL
PARAMETER
MIN
TYP2
MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
60
70
VGS(th)
Gate-Threshold Voltage
0.8
1.9
IGSS
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
±10
1
1000
3
On-State Drain Current
ID(ON)
rDS(ON)
75
Drain-Source On-Resistance
3
3
VDS(ON)
Drain-Source On-Voltage
gFS
Forward Transconductance
3
Common Source Output Conductance
gOS
3
100
3, 4
210
V
nA
µA
mA
4.8
5.3
2.5
5
4.4
9
0.36
0.4
1.25
2.5
2.2
4.5
ID = 10µA, VGS = 0V
VDS = VGS, I D = 1mA
VGS = ±15V, VDS = 0V
VDS = 48V, VGS = 0V
TC = 125oC
VDS = 10V, VGS = 4.5V
4
Ω
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 0.5A
TC = 125oC
4
V
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 0.5A
TC = 125oC4
170
mS
VDS = 10V, ID = 0.2A
500
µS
VDS = 5V, ID = 50mA
pF
VDS = 25V, VGS = 0V, f = 1MHz
nS
VDD = 15V, RL = 25Ω, ID = 0.5A
VGEN = 10V, RG = 25Ω
(Switching time is essentially
independent of operating temperature)
DYNAMIC
Input Capacitance
Ciss
4
16
60
Coss
Output Capacitance
11
25
Crss
Reverse Transfer Capacitance
2
5
Turn-On Time
7
10
SWITCHING
t ON
t OFF
NOTES: 1.
2.
3.
4.
Turn-Off Time
TA = 25oC unless otherwise specified.
For design aid only, not subject to production testing.
Pulse test; PW = ≤300µS, duty cycle ≤3%.
This parameter not registered with JEDEC.
7
10
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