BSI BS616LV1010DIP55 Very low power cmos sram 128k x 16 bit Datasheet

Very Low Power CMOS SRAM
128K X 16 bit
BS616LV2016
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
n DESCRIPTION
Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V
Ÿ Very low power consumption :
VCC = 3.0V
Operation current : 30mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 0.1uA (Typ.) at 25 OC
VCC = 5.0V
Operation current : 62mA (Max.) at 55ns
8mA (Max.) at 1MHz
Standby current : 0.6uA (Typ.) at 25OC
Ÿ High speed access time :
-55
55ns(Max.) at VCC=3.0~5.5V
-70
70ns(Max.) at VCC=2.7~5.5V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation
Ÿ Data retention supply voltage as low as 1.5V
The BS616LV2016 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 by 16 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical CMOS standby
current of 0.1uA at 3.0V/25OC and maximum access time of 55ns at
3.0V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE) and active LOW output enable (OE) and three-state output
drivers.
The BS616LV2016 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS616LV2016 is available in DICE form, JEDEC standard
44-pin TSOP II package and 48-ball BGA package.
n POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
STANDBY
OPERATING
TEMPERATURE
VCC=5.0V
VCC=3.0V
Commercial
+0OC to +70OC
6.0uA
0.7uA
Industrial
-40OC to +85OC
20uA
BS616LV2016DC
BS616LV2016EC
BS616LV2016AI
BS616LV2016EI
Operating
(ICCSB1, Max)
1MHz
fMax.
7mA
39mA
60mA
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1MHz
VCC=3.0V
10MHz
fMax.
1.5mA
14mA
29mA
DICE
TSOP II-44
BGA-48-0608
2.0uA
8mA
40mA
62mA
2mA
15mA
30mA
TSOP II-44
n PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
VSS
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
PKG TYPE
(ICC, Max)
VCC=5.0V
10MHz
n BLOCK DIAGRAM
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV2016EC
BS616LV2016EI
1
2
3
4
5
6
LB
OE
A0
A1
A2
NC
B
D8
UB
A3
A4
CE
D0
C
D9
D10
A5
A6
D1
D2
D
VSS
D11
NC
A7
D3
VCC
E
VCC
D12
NC
A16
D4
VSS
F
D14
D13
A14
A15
D5
D6
G
D15
NC
A12
A13
WE
D7
H
NC
A8
A9
A10
A11
NC
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 2048
2048
DQ0
.
16
.
.
.
.
.
.
.
.
.
.
DQ15
CE
WE
OE
UB
LB
16
.
Data
Input
Buffer
Data
Output
Buffer
16
Column I/O
Write Driver
Sense Amp
16
128
Column Decoder
7
Control
Address Input Buffer
A12 A13 A14 A15 A16 A0
A1
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
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n PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit in the RAM
CE Chip Enable Input
CE is active LOW. Chip enable must be active when data read form or write to the
device. If chip enable is not active, the device is deselected and is in standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0-DQ15 Data Input/Output
There 16 bi-directional ports are used to read data from or write data into the RAM.
Ports
VCC
Power Supply
VSS
Ground
n TRUTH TABLE
MODE
CE
WE
OE
LB
UB
IO0~IO7
IO8~IO15
VCC CURRENT
Chip De-selected
(Power Down)
H
X
X
X
X
High Z
High Z
ICCSB, ICCSB1
X
X
X
H
H
High Z
High Z
ICCSB, ICCSB1
L
H
H
L
X
High Z
High Z
ICC
L
H
H
X
L
High Z
High Z
ICC
L
L
DOUT
DOUT
ICC
H
L
High Z
DOUT
ICC
L
H
DOUT
High Z
ICC
L
L
DIN
DIN
ICC
H
L
X
DIN
ICC
L
H
DIN
X
ICC
Output Disabled
Read
Write
L
L
H
L
L
X
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
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(1)
n ABSOLUTE MAXIMUM RATINGS
RATING
UNITS
RANG
AMBIENT
TEMPERATURE
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
-0.5(2) to 7.0
V
Commercial
0OC to + 70OC
2.4V ~ 5.5V
-40 to +125
O
C
Industrial
-40OC to + 85OC
2.4V ~ 5.5V
Storage Temperature
-60 to +150
O
C
SYMBOL
VTERM
TBIAS
TSTG
n OPERATING RANGE
PARAMETER
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
n CAPACITANCE
(1)
O
(TA = 25 C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns.
CIN
CIO
Input
Capacitance
Input/Output
Capacitance
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
O
O
n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
2.4
--
5.5
V
VCC
Power Supply
VIL
Input Low Voltage
-0.5(2)
--
0.8
V
VIH
Input High Voltage
2.2
--
VCC+0.3(3)
V
IIL
Input Leakage Current
--
--
1
uA
ILO
Output Leakage Current
--
--
1
uA
VOL
Output Low Voltage
V CC = Max, IOL = 2.0mA
--
--
0.4
V
VOH
Output High Voltage
V CC = Min, IOH = -1.0mA
2.4
--
--
V
ICC(5)
Operating Power Supply
Current
CE = VIL,
VCC=3.0V
IIO = 0mA, f = FMAX(4)
--
--
VCC=5.0V
Operating Power Supply
Current
CE = VIL,
VCC=3.0V
IIO = 0mA, f = 1MHz
VCC=5.0V
CE = VIH,
VCC=3.0V
IIO = 0mA
VCC=5.0V
CE≧VCC-0.2V
VCC=3.0V
VIN≧V CC-0.2V or VIN≦0.2V
VCC=5.0V
ICC1
ICCSB
ICCSB1(6)
VIN = 0V to VCC
CE= VIH
VI/O = 0V to V CC,
CE= VIH or OE = VIH
Standby Current – TTL
Standby Current – CMOS
30
mA
62
--
--
2
mA
8
--
--
0.5
mA
1.0
--
0.1
2.0
0.6
20
uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC(MAX.) is 29mA/60mA at VCC=3.0V/5.0V and TA=70OC.
6. ICCSB1(MAX.) is 0.7uA/6.0uA at VCC=3.0V/5.0V and TA=70OC.
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O
O
n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C)
SYMBOL
VDR
(3)
ICCDR
PARAMETER
TEST CONDITIONS
TYP. (1)
MAX.
UNITS
VCC for Data Retention
CE≧VCC-0.2V
VIN≧VCC-0.2V or VIN≦0.2V
1.5
--
--
V
Data Retention Current
CE≧VCC-0.2V
VIN≧VCC-0.2V or VIN≦0.2V
--
0.05
1.0
uA
0
--
--
ns
tRC (2)
--
--
ns
Chip Deselect to Data
Retention Time
tCDR
MIN.
See Retention Waveform
tR
Operation Recovery Time
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCDR(Max.) is 0.5uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (CE Controlled)
Data Retention Mode
VCC
VDR≧1.5V
VCC
tCDR
tR
CE≧VCC - 0.2V
VIH
CE
VCC
n AC TEST CONDITIONS
VIH
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
Output Load
WAVEFORM
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ
CL = 5pF+1TTL
Others
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
Output
CL(1)
VCC
GND
90%
10%
→ ←
Rise Time:
1V/ns
90%
10%
→ ←
Fall Time:
1V/ns
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
1. Including jig and scope capacitance.
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O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
MIN. TYP. MAX.
DESCRIPTION
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN. TYP. MAX.
UNITS
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQX
tAA
Address Access Time
--
--
55
--
--
70
ns
tELQV
tACS
Chip Select Access Time
(CE)
--
--
55
--
--
70
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
55
--
--
70
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
30
--
--
35
ns
tELQX
tCLZ
Chip Select to Output Low Z
(CE)
10
--
--
10
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
5
--
--
5
--
--
ns
tEHQZ
tCHZ
Chip Select to Output High Z
(CE)
--
--
30
--
--
35
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
30
--
--
35
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
25
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
ADDRESS
tOH
tAA
tOH
DOUT
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BS616LV2016
READ CYCLE 2
(1,3,4)
CE
tACS
tBA
LB, UB
tCHZ
tBE
tCLZ
DOUT
READ CYCLE 3
(5)
tBDO
(5)
(1, 4)
tRC
ADDRESS
tAA
OE
tOH
tOE
tOLZ
CE
tCLZ
tOHZ
(5)
tCHZ
(5)
(1,5)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
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O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
WRITE CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
55
--
--
70
--
--
ns
tELWH
tCW
Chip Select to End of Write
(CE)
55
--
--
70
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
(LB, UB)
25
--
--
30
--
--
ns
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
ns
tWHAX
tWR
Write Recovery Time
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
25
--
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
(CE, WE)
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
ADDRESS
tWR1
(3)
OE
tCW
(11)
(5)
CE
tBW
LB, UB
tWR2
tAW
WE
tWP
tAS
tOHZ
(3)
(2)
(4,10)
DOUT
tDH
tDW
DIN
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BS616LV2016
WRITE CYCLE 2
(1,6)
tWC
ADDRESS
tCW
CE
(5)
LB, UB
(12)
(11)
tBW
tAW
tWP
WE
tAS
tWHZ
tWR2
(2)
(4,10)
(3)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All
signals must be active to initiate a write and any one signal can terminate a write by going
inactive. The data input setup and hold timing should be referenced to the second transition
edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals
of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11. tCW is measured from the later of CE going low to the end of write.
12. The change of Read/Write cycle must accompany with CE or address toggled.
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BS616LV2016
n ORDERING INFORMATION
BS616LV2016
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
A: BGA-48-0608
D: DICE
E: TSOP II-44
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
n PACKAGE DIMENSIONS
TSOP II-44
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BS616LV2016
n PACKAGE DIMENSIONS (continued)
NOTES
:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.2 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8mm)
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BS616LV2016
n Revision History
Revision No.
History
Draft Date
1.2
Add Icc1 characteristic parameter
Improve Iccsb1 spec.
I-grade from 30uA to 20uA at 5.0V
5.0uA to 2.0uA at 3.0V
C-grade from 10uA to 6.0uA at 5.0V
3.0uA to 0.7uA at 3.0V
Jan. 13, 2006
1.3
Change I-grade operation temperature range
- from –25OC to –40OC
May. 25, 2006
1.4
Add 48-ball BGA package
Nov. 02, 2006
R0201-BS616LV2016
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Remark
Revision 1.4
Nov.
2006
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