BSI BS616LV2016DCG55 Very low power/voltage cmos sram 128k x 16 bit Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
„ FEATURES
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 29mA (@55ns) operating current
I -grade: 30mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
0.3uA(Typ.) CMOS standby current
Vcc = 5.0V C-grade: 60mA (@55ns) operating current
I -grade: 62mA (@55ns) operating current
C-grade: 53mA (@70ns) operating current
I -grade: 55mA (@70ns) operating current
1.0uA(Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS616LV2016DC
BS616LV2016EC
BS616LV2016AC
BS616LV2016DI
BS616LV2016EI
BS616LV2016AI
Vcc
RANGE
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
„ DESCRIPTION
The BS616LV2016 is a high performance , very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.3uA at 3.0V /25oC and maximum access time of 55ns at 3.0V / 85oC.
Easy memory expansion is provided by active LOW chip enable (CE),
active LOW output enable(OE) and three-state output drivers.
The BS616LV2016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
SPEED
( ns )
PKG TYPE
( ICC, Max )
55ns: 3.0~5.5V
70ns: 2.7~5.5V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
70ns
Vcc=5.0V
70ns
+0 O C to +70 O C
2.4V ~5.5V
55/70
3.0uA
10uA
24mA
53mA
-40 O C to +85 O C
2.4V ~ 5.5V
55/70
5.0uA
30uA
25mA
55mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
POWER DISSIPATION
STANDBY
Operating
( ICCSB1, Max )
„ PIN CONFIGURATIONS
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
BS616LV2016
„ BLOCK DIAGRAM
BS616LV2016EC
BS616LV2016EI
2
3
DICE
TSOP2-44
BGA-48-0608
DICE
TSOP2-44
BGA-48-0608
4
5
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
A8
A13
A15
Address
A16
A14
A12
Input
Buffer
A7
A6
A5
A4
16
DQ0
.
.
.
.
.
.
.
.
OE
A0
A1
A2
N.C.
B
D8
UB
A3
A4
CE
D0
Memory Array
Decoder
1024 x 2048
Data
Input
Buffer
16
Column I/O
Write Driver
Sense Amp
16
Data
Output
Buffer
DQ15
LB
1024
Row
2048
6
A
20
128
16
Column Decoder
14
CE
WE
C
D9
D10
A5
A6
D1
D2
OE
UB
LB
D
VSS
D11
N.C.
A7
D3
VCC
E
VCC
D12
N.C.
A16
D4
VSS
F
D14
D13
A14
A15
D5
D6
G
D15
N.C.
A12
A13
WE
D7
H
N.C.
A8
A9
A10
A11
N.C.
Control
Address Input Buffer
A11 A9 A3 A2 A1 A0 A10
Vcc
Gnd
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS616LV2016
1
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
DQ0 - DQ15 Data Input/Output
Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
Not selected
(Power Down)
Output Disabled
Read
Write
R0201-BS616LV2016
CE
H
WE
OE
LB
UB
D0~D7
D8~D15
X
X
X
X
High Z
High Z
ICCSB , I CCSB1
X
X
X
H
H
High Z
L
L
X
H
X
H
H
X
H
X
High Z
High Z
High Z
High Z
ICCSB , I CCSB1
ICC
L
L
Dout
H
L
L
H
L
L
L
L
H
L
L
X
Vcc CURRENT
High Z
ICC
Dout
ICC
High Z
Dout
ICC
Dout
High Z
ICC
Din
Din
ICC
H
L
X
Din
ICC
L
H
Din
X
ICC
2
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
V TERM
Terminal Voltage with
Respect to GND
T BIAS
Temperature Under Bias
-40 to +85
O
T STG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C
2.4V ~ 5.5V
Industrial
-40 O C to +85 O C
2.4V ~ 5.5V
C
C
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not 100% tested.
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
PARAMETER
V IL
Guaranteed Input Low
(3)
Voltage
Vcc =3.0V
V IH
Guaranteed Input High
(3)
Voltage
Vcc =3.0V
2.0
Vcc =5.0V
2.2
IIL
Input Leakage Current
Vcc = Max, V IN = 0V to Vcc
ILO
Output Leakage Current
Vcc = Max,CE = V IH or OE = V IH,
V I/O = 0V to Vcc
V OL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
V OH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Operating Power Supply
Current
CE = V IL,
(2)
IDQ = 0mA, F = Fmax
Standby Current-TTL
CE=V IH
IDQ = 0mA
TEST CONDITIONS
Vcc =5.0V
MIN.
TYP. (1)
MAX.
UNITS
-0.5
--
0.8
V
--
V cc+0.3
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
2.4
--
--
V
--
--
--
--
Vcc =3.0V
Vcc =5.0V
Vcc =3.0V
ICC
(5)
ICCSB
ICCSB1
(4)
Standby Current-CMOS
Vcc =5.0V
Vcc =3V
70ns
Vcc =5V
70ns
Vcc =3.0V
mA
0.5
Vcc =5.0V
CE ≧ V cc-0.2V,
V IN≧V cc-0.2V or V IN≦0.2V
25
55
mA
1.0
Vcc =3.0V
--
Vcc =5.0V
0.3
5
1.0
30
uA
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4.IccsB1_Max. is 3uA / 10uA at Vcc=3V / 5V and TA=70oC.
5. Icc_Max. is 30mA(@3V) / 62mA(@5V) under 55ns operation.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
Vcc for Data Retention
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE ≧ Vcc - 0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
--
--
ns
--
--
ns
VDR
(3)
tR
See Retention Waveform
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25 C
O
R0201-BS616LV2016
0
TRC
2. tRC = Read Cycle Time
3
(2)
3. IccDR_MAX. is 0.7uA at TA=70oC.
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
Vcc
tR
t CDR
CE ≥ Vcc - 0.2V
VIH
CE
VIH
„ KEY TO SWITCHING WAVEFORMS
„AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
WAVEFORM
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 100pF+1TTL
CL = 30pF+1TTL
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQV
tAA
Address Access Time
--
--
55
--
--
70
ns
tELQV
tACS
Chip Select Access Time
(CE)
--
--
55
--
--
70
ns
tBA
tBA (1)
Data Byte Control Access Time
(LB,UB)
--
--
30
--
--
35
ns
--
--
30
--
--
35
ns
DESCRIPTION
CYCLE TIME : 55ns
CYCLE TIME : 70ns
MIN. TYP. MAX.
MIN. TYP. MAX.
(Vcc = 2.7~5.5V)
(Vcc = 3.0~5.5V)
UNIT
tGLQV
tOE
Output Enable to Output Valid
t E1LQX
tCLZ
Chip Select to Output Low Z
(CE)
10
--
--
10
--
--
ns
tBE
tBE
Data Byte Control to Output Low Z
(LB,UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output in Low Z
5
--
--
5
--
--
ns
tEHQZ
tCHZ
Chip Deselect to Output in High Z
(CE)
--
--
30
--
--
35
ns
tBDO
tBDO
Data Byte Control to Output High Z
(LB,UB)
tGHQZ
tOHZ
Output Disable to Output in High Z
tAXOX
tOH
Data Hold from Address Change
--
--
30
--
--
35
ns
--
--
25
--
--
30
ns
10
--
--
10
--
--
ns
NOTE :
1. tBA is 30ns/35ns (@speed=55ns/70ns) with address toggle. ; tBA is 55ns/70ns (@speed=55ns/70ns) without address toggle.
R0201-BS616LV2016
4
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2
(1,3,4)
CE
t ACS
t BA
LB,UB
t BE
t
D OUT
READ CYCLE3
t BDO
(5)
CLZ
t
(5)
CHZ
(1,4)
t RC
ADDRESS
t
AA
OE
t OH
t OE
t OLZ
CE
(5)
t CLZ
t
t OHZ (5)
t CHZ(1,5)
ACS
t BA
LB,UB
t BE
t BDO
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV2016
5
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tE1LWH
tAVWL
tAVWH
tWLWH
tWHAX
tBW
tWLQZ
tDVWH
tWHDX
tGHQZ
t WC
t CW
t AS
t AW
t WP
t WR
t BW (1)
t WHZ
t DW
t DH
t OHZ
tWHOX
t OW
CYCLE TIME : 55ns
CYCLE TIME : 70ns
MIN. TYP. MAX.
MIN. TYP. MAX.
(Vcc = 2.7~5.5V)
(Vcc = 3.0~5.5V)
DESCRIPTION
UNIT
55
--
--
70
--
--
ns
55
--
--
70
--
--
ns
0
--
--
0
--
--
ns
Address Valid to End of Write
55
--
--
70
--
--
ns
Write Pulse Width
30
--
--
35
--
--
ns
(CE,WE)
0
--
--
0
--
--
ns
(LB,UB)
25
--
--
30
--
--
ns
--
--
25
--
--
30
ns
Data to Write Time Overlap
25
--
--
30
--
--
ns
Data Hold from Write Time
0
--
--
0
--
--
ns
Output Disable to Output in High Z
--
--
25
--
--
30
ns
End of Write to Output Active
5
--
--
5
--
--
ns
Write Cycle Time
Chip Select to End of Write
(CE)
Address Setup Time
Write recovery Time
Date Byte Control to End of Write
Write to Output in High Z
NOTE :
1. tBW is 25ns/30ns (@speed=55ns/70ns) with address toggle. ; tBW is 55ns/70ns (@speed=55ns/70ns) without address toggle.
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
(3)
t WR
OE
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
(3)
t WP
t AS
(2)
(4,10)
t OHZ
D OUT
t
DH
t DW
D IN
R0201-BS616LV2016
6
Revision 1.1
Jan.
2004
BSI
BS616LV2016
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t CW
(5)
CE
t BW
LB,UB
t AW
WE
t WR
t WP
(3)
(2)
t AS
(4,10)
t WHZ
D OUT
t
OW
t
DH
(7)
(8)
t DW
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.
3. TWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase
to the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE going low to the end of write.
R0201-BS616LV2016
7
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ ORDERING INFORMATION
BS616LV2016 X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
E: TSOP2-44
A: BGA-48-0608
D: DICE
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
„ PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
1.4 Max.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
BALL PITCH e = 0.75
D
E
N
D1
E1
8.0
6.0
48
5.25
3.75
E1
e
D1
VIEW A
48 mini-BGA (6 x 8)
R0201-BS616LV2016
8
Revision 1.1
Jan.
2004
BSI
BS616LV2016
„ PACKAGE DIMENSIONS
TSOP2-44
R0201-BS616LV2016
9
Revision 1.1
Jan.
2004
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