BSI BS62LV1029STCG55 Very low power/voltage cmos sram 128k x 8 bit Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
128K X 8 bit
BS62LV1029
„ DESCRIPTION
„ FEATURES
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 46mA (@55ns) operating current
I- grade : 47mA (@55ns) operating current
C-grade : 38mA (@70ns) operating current
I- grade : 39mA (@70ns) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV1029 is a high performance, very low power CMOS
Static Random Access Memory organized as 131,072 words by 8 bits
and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA at 5V/25oC and maximum access time of 55ns at 5V/85oC.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV1029 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1029 is available in DICE form , JEDEC standard 32 pin
450mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP, 8mmx13.4
mm STSOP and 8mmx20mm TSOP.
„ PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
BS62LV1029SC
BS62LV1029TC
BS62LV1029STC
BS62LV1029PC
BS62LV1029JC
BS62LV1029DC
BS62LV1029SI
BS62LV1029TI
BS62LV1029STI
BS62LV1029PI
BS62LV1029JI
BS62LV1029DI
Vcc
RANGE
Vcc=5.0V
55ns
PKG TYPE
70ns
55/70
8.0uA
46mA
38mA
O
O
4.5V~ 5.5V
55/70
20uA
47mA
39mA
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(ICC, Max)
Vcc= 5.0V
4.5V ~ 5.5V
32
31
30
29
28
27
BS62LV1029SC 26
BS62LV1029SI 25
BS62LV1029PC 24
BS62LV1029PI
23
BS62LV1029JC
22
BS62LV1029JI
21
20
19
18
17
•
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
(ICCSB1 , Max)
O
-40 C to +85 C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
55ns :4.5~5.5V
70ns :4.5~5.5V
O
+0 C to +70 C
BS62LV1029TC
BS62LV1029STC
BS62LV1029TI
BS62LV1029STI
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
SOP-32
TSOP-32
STSOP-32
PDIP-32
SOJ-32
DICE
„ BLOCK DIAGRAM
„ PIN CONFIGURATIONS
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
POWER DISSIPATION
STANDBY
Operating
SPEED
(ns)
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A6
A7
A12
A14
A16
A15
A13
A8
A9
A11
Address
Input
Buffer
20
Row
1024
Memory Array
1024 x 1024
Decoder
1024
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
CE2
CE1
WE
OE
Vdd
Gnd
8
8
Data
Input
Buffer
Data
Output
Buffer
Column I/O
8
8
Write Driver
Sense Amp
128
Column Decoder
14
Control
Address Input Buffer
A5 A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
R0201-BS62LV1029
1
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ PIN DESCRIPTIONS
Name
Function
A0-A16 Address Input
These 17 address inputs select one of the 131,072 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
WE
CE1
CE2
OE
Not selected
(Power Down)
X
H
X
X
X
X
L
X
Output Disabled
H
L
H
Read
H
L
H
Write
L
L
H
PARAMETER
I CCSB, I CCSB1
H
High Z
I CC
L
D OUT
I CC
X
D IN
I CC
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
V TERM
Terminal Voltage with
Respect to GND
T BIAS
Temperature Under Bias
-40 to +85
O
T STG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
C
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C
4.5V ~ 5.5V
Industrial
-40 O C to +85 O C
4.5V ~ 5.5V
C
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS62LV1029
Vcc CURRENT
High Z
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
I/O OPERATION
2
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not 100% tested.
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
IIL
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
(2)
Voltage
Input Leakage Current
ILO
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc=5.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc=5.0V
2.4
--
--
V
ICC
Operating Power Supply
Current
CE1 = VIL, or CE2 = VIH,
IDQ = 0mA, F = Fmax(3)
--
--
47
--
--
39
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA
Vcc=5.0V
--
--
1.0
mA
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc=5.0V
--
0.6
20
uA
VIL
VIH
(5)
ICCSB1
(4)
Vcc=5.0V
-0.5
--
0.8
V
Vcc=5.0V
2.2
--
Vcc+0.3
V
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
--
--
1
uA
55ns
Vcc=5.0V
70ns
mA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
5. Icc_Max. is 46mA(@55ns) / 38mA(@70ns) at Vcc=5.0V and TA= 0oC~70oC.
4. IccSB1_Max. is 8.0uA at Vcc=5.0V and TA=70oC.
„ DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
1.5
--
--
V
--
0.05
0.3
uA
0
--
--
ns
TRC (2)
--
--
ns
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
ICCDR(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
tCDR
Chip Deselect to Data
Retention Time
tR
See Retention Waveform
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.2uA at TA=70OC.
„ LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
CE1
Vcc
tR
t CDR
CE1 ≥ Vcc - 0.2V
VIH
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
VDR ≧ 1.5V
Vcc
CE2
R0201-BS62LV1029
VIL
Vcc
tR
t CDR
CE2 ≦ 0.2V
3
VIL
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ KEY TO SWITCHING WAVEFORMS
„AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
WAVEFORM
INPUTS
OUTPUTS
1V/ns
MUST BE
STEADY
MUST BE
STEADY
Input and Output
Timing Reference Level
0.5Vcc
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
Output Load
CL = 30pF+1TTL
CL = 100pF+1TTL
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
t AVAX
t AVQV
t E1LQV
t E2HOV
t GLQV
t E1LQX
t E2HOX
t GLQX
t E1HQZ
t E2HQZ
t GHQZ
t RC
t AA
t ACS1
t ACS2
t OE
t CLZ1
t CLZ2
t OLZ
t CHZ1
t CHZ2
t OHZ
t AXOX
t OH
R0201-BS62LV1029
CYCLE TIME : 55ns
(Vcc = 4.5~5.5V)
MIN. TYP. MAX.
DESCRIPTION
CYCLE TIME : 70ns
(Vcc = 4.5~5.5V)
MIN. TYP. MAX.
UNIT
Read Cycle Time
55
--
--
70
--
--
ns
Address Access Time
--
--
55
--
--
70
ns
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
--
--
30
--
--
40
ns
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
10
--
--
10
--
--
ns
Output Enable to Output Valid
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
(CE1)
--
--
35
--
--
40
ns
Chip Deselect to Output in High Z
(CE2)
--
--
35
--
--
40
ns
Output Disable to Output in High Z
--
--
30
--
--
35
ns
Data Hold from Address Change
10
--
--
10
--
--
ns
4
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ SWITCHING WAVEFORMS (READ CYCLE)
(1,2,4)
READ CYCLE1
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2
(1,3,4)
CE1
CE2
t
t
ACS1
t
ACS2
t
(5)
(5)
CHZ1,
t
CHZ2
CLZ
D OUT
READ CYCLE3
(1,4)
t RC
ADDRESS
t
AA
OE
t
t
CE1
t
CE2
t
OH
OLZ
t ACS1
(5)
CLZ1
t
t
OE
t OHZ (5)
(1,5)
t CHZ1
ACS2
t
(5)
(2,5)
CHZ2
CLZ2
D OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL .
5. The parameter is guaranteed but not 100% tested.
R0201-BS62LV1029
5
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
WRITE CYCLE
JEDEC
PARAMETER
PARAMETER
NAME
NAME
CYCLE TIME : 70ns
(Vcc = 4.5~5.5V)
MIN. TYP. MAX.
CYCLE TIME : 55ns
(Vcc = 4.5~5.5V)
MIN. TYP. MAX.
DESCRIPTION
UNIT
t AVAX
t WC
Write Cycle Time
55
--
--
70
--
--
ns
t E1LWH
t CW
Chip Select to End of Write
55
--
--
70
--
--
ns
t AVWL
t AS
Address Set up Time
0
--
--
0
--
--
ns
t AVWH
t AW
Address Valid to End of Write
55
--
--
70
--
--
ns
t WLWH
t WP
Write Pulse Width
35
--
--
50
--
--
ns
t WHAX
t WR1
Write Recovery Time
(CE1 , WE)
0
--
--
0
--
--
ns
t E2LAX
t WR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
t WLOZ
t WHZ
Write to Output in High Z
--
--
25
--
--
30
ns
t DVWH
t DW
Data to Write Time Overlap
25
--
--
30
--
--
ns
t WHDX
t DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t GHOZ
t OHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
t WHQX
t OW
End of Write to Output Active
5
--
--
5
--
--
ns
„ SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
ADDRESS
t
(3)
WR1
OE
(11)
t CW
(5)
CE1
(5)
CE2
t CW
t
WE
(11)
t WR2
AW
t
t AS
(3)
WP
(2)
(4,10)
t OHZ
D OUT
t DH
t DW
D IN
R0201-BS62LV1029
6
Revision 1.1
Jan.
2004
BSI
BS62LV1029
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t
(5)
CW
CE1
CE2
(5)
(11)
t
t CW
AW
t WR2
t WP
(3)
(2)
WE
t AS
(4,10)
t WHZ
D OUT
t
OW
t
DH
(7)
(8)
t DW
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low.
All signals must be active to initiate a write and any one signal can terminate a write by going
inactive. The data input setup and hold timing should be referenced to the second transition edge
of the signal that terminates the write.
3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the
outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input
signals of opposite phase to the outputs must not be applied to them.
10. The parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BS62LV1029
7
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ ORDERING INFORMATION
BS62LV1029 X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
J: SOJ
S: SOP
P: PDIP
T: TSOP (8mm x 20mm)
ST: Small TSOP (8mm x 13.4mm)
D: DICE
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
„ PACKAGE DIMENSIONS
WITH PLATING
b
c c1
BASE METAL
b1
SECTION A-A
SOP -32
R0201-BS62LV1029
8
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ PACKAGE DIMENSIONS (continued)
STSOP - 32
TSOP - 32
R0201-BS62LV1029
9
Revision 1.1
Jan.
2004
BSI
BS62LV1029
„ PACKAGE DIMENSIONS (continued)
PDIP - 32
SOJ - 32
R0201-BS62LV1029
10
Revision 1.1
Jan.
2004
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