BSI BS62LV2005TI Very low power/voltage cmos sram 256k x 8 bit Datasheet

BSI
Very Low Power/Voltage CMOS SRAM
256K X 8 bit
BS62LV2005
„ DESCRIPTION
„ FEATURES
• Wide Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
Vcc = 5.0V C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns(Max.) at Vcc = 5.0V
-55
55ns(Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
The BS62LV2005 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.6uA and maximum access time of 55ns in 5V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV2005 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2005 is available in the JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
„ PRODUCT FAMILY
PRODUCT
FAMILY
BS62LV2005TC
BS62LV2005STC
BS62LV2005SC
BS62LV2005TI
BS62LV2005STI
BS62LV2005SI
OPERATING
TEMPERATURE
(ICC , Max)
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
55 / 70
6uA
35mA
-40 O C to +85O C
4.5V ~ 5.5V
55 / 70
25uA
40mA
1
2
3
4
5
6
7 BS62LV2005SC
8 BS62LV2005SI
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
PKG TYPE
TSOP-32
STSOP-32
SOP -32
TSOP-32
STSOP-32
SOP -32
„ BLOCK DIAGRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62LV2005TC
BS62LV2005STC
BS62LV2005TI
BS62LV2005STI
•
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
(ICCSB1 , Max)
4.5V ~ 5.5V
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
POWER DISSIPATION
STANDBY
Operating
+0 O C to +70O C
„ PIN CONFIGURATIONS
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
Vcc
RANGE
SPEED
(ns)
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A13
A17
A15
A16
A14
A12
A7
A6
A5
A4
Address
Input
Buffer
20
Row
1024
Memory Array
1024 x 2048
Decoder
2048
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
CE1
CE2
WE
OE
Vdd
Gnd
8
8
Data
Input
Buffer
Data
Output
Buffer
Column I/O
8
8
Write Driver
Sense Amp
256
Column Decoder
16
Control
Address Input Buffer
A11 A9 A8 A3 A2 A1 A0 A10
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
R0201-BS62LV2005
1
Revision 2.4
April 2002
BSI
BS62LV2005
„ PIN DESCRIPTIONS
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
„ TRUTH TABLE
MODE
WE
CE1
CE2
OE
Not selected
(Power Down)
X
H
X
X
X
X
L
X
Output Disabled
I/O OPERATION
Vcc CURRENT
High Z
I CCSB, I CCSB1
H
L
H
H
High Z
I CC
Read
H
L
H
L
D OUT
I CC
Write
L
L
H
X
D IN
I CC
„ ABSOLUTE MAXIMUM RATINGS(1)
SYMBOL
PARAMETER
„ OPERATING RANGE
RATING
UNITS
-0.5 to
Vcc+0.5
V
V TERM
Terminal Voltage with
Respect to GND
T BIAS
Temperature Under Bias
-40 to +125
O
T STG
Storage Temperature
-60 to +150
O
PT
Power Dissipation
1.0
W
I OUT
DC Output Current
20
mA
Commercial
C
Industrial
AMBIENT
TEMPERATURE
O
O
0 C to +70 C
O
O
-40 C to +85 C
Vcc
4.5V ~ 5.5V
4.5V ~ 5.5V
C
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
R0201-BS62LV2005
RANGE
2
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
VIN=0V
6
pF
VI/O=0V
8
pF
1. This parameter is guaranteed and not tested.
Revision 2.4
April 2002
BSI
BS62LV2005
„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
TEST CONDITIONS
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
(2)
Voltage
Input Leakage Current
MIN.
TYP. (1)
MAX.
UNITS
Vcc=5.0V
-0.5
--
0.8
V
Vcc=5.0V
2.2
--
Vcc+0.2
V
--
--
1
uA
--
--
1
uA
Vcc = Max, VIN = 0V to Vcc
IOL
Output Leakage Current
Vcc = Max, CE1= V , CE2= V or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=5.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=5.0V
2.4
--
--
V
ICC
Operating Power Supply
Current
CE1 = VIL, or CE2 = VIH,
IDQ = 0mA, F = Fmax(3)
Vcc=5.0V
--
--
35
mA
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
(3)
IDQ = 0mA, F = Fmax
Vcc=5.0V
--
--
2
mA
ICCSB1
Standby Current-CMOS
CE1ЊVcc-0.2V, CE2Љ0.2V,
VINЊVcc-0.2V or VINЉ0.2V
Vcc=5.0V
--
0.6
6
uA
IH
IL,
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
„ DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE1 Њ Vcc - 0.2V, CE2 Љ 0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.01
1
uA
tCDR
Chip Deselect to Data
Retention Time
--
--
ns
--
--
ns
tR
See Retention Waveform
Operation Recovery Time
0
TRC
(2)
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
„ LOW VCC DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
Data Retention Mode
Vcc
VDR ≥ 1.5V
Vcc
CE1
Vcc
tR
t CDR
CE1 ≥ Vcc - 0.2V
VIH
„ LOW VCC DATA RETENTION WAVEFORM (2)
VIH
( CE2 Controlled )
Data Retention Mode
Vcc
VDR Њ 1.5V
Vcc
CE2
R0201-BS62LV2005
VIL
Vcc
tR
t CDR
CE2 Љ 0.2V
3
VIL
Revision 2.4
April 2002
BSI
BS62LV2005
„ KEY TO SWITCHING WAVEFORMS
„ AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0V
5ns
WAVEFORM
0.5Vcc
„ AC TEST LOADS AND WAVEFORMS
1928 Ω
5.0V
1928 Ω
5.0V
OUTPUT
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGE
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
OUTPUT
,
100PF
5PF
INCLUDING
JIG AND
SCOPE
INCLUDING
JIG AND
SCOPE
1020Ω
1020 Ω
FIGURE 1A
FIGURE 1B
THEVENIN EQUIVALENT
667 Ω
OUTPUT
DON T CARE:
ANY CHANGE
PERMITTED
CHANGE :
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
1.73V
ALL INPUT PULSES
Vcc
GND
90% 90%
10%
→
←
→
10%
← 5ns
FIGURE 2
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 5.0V )
READ CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
tAVAX
tAVQV
tE1LQV
tE2HOV
tGLQV
tE1LQX
tE2HOX
tGLQX
tE1HQZ
tE2HQZ
tGHQZ
tRC
tAA
t ACS1
tACS2
tOE
tCLZ1
tCLZ2
tOLZ
tCHZ1
tCHZ2
tOHZ
tAXOX
tOH
R0201-BS62LV2005
BS62LV2005-55
MIN. TYP. MAX.
DESCRIPTION
55
Read Cycle Time
--
--
BS62LV2005-70
MIN. TYP. MAX.
70
--
--
UNIT
ns
--
--
55
--
--
70
ns
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
--
--
30
--
--
35
ns
Address Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
10
--
--
10
--
--
ns
Chip Deselect to Output in High Z
(CE1)
0
--
30
0
--
35
ns
Chip Deselect to Output in High Z
(CE2)
0
--
30
0
--
35
ns
0
--
25
0
--
30
ns
10
--
--
10
--
--
ns
Output Enable to Output in Low Z
Output Disable to Output in High Z
Output Disable to Output Address Change
4
Revision 2.4
April 2002
BSI
BS62LV2005
„ SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
ADDRESS
t
t
t OH
AA
OH
D OUT
READ CYCLE2 (1,3,4)
CE1
t ACS1
CE2
t
t
ACS2
t CHZ1, t
(5)
CLZ
(5)
CHZ2
D OUT
READ CYCLE3 (1,4)
t RC
ADDRESS
t
AA
OE
t OE
t OH
t OLZ
CE1
(5)
t ACS1
t CLZ1
CE2
t OHZ (5)
(1,5)
t CHZ1
t ACS2
(2,5)
t
t CHZ2
(5)
CLZ2
D OUT
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL .
5. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
R0201-BS62LV2005
5
Revision 2.4
April 2002
BSI
BS62LV2005
„ AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 5.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
BS62LV2005-55
MIN. TYP. MAX.
DESCRIPTION
BS62LV2005-70
MIN. TYP. MAX.
UNIT
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
ns
tE1LWH
tCW
Chip Select to End of Write
55
--
--
70
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
55
--
--
70
--
--
ns
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
ns
tWHAX
t WR1
Write Recovery Time
(CE1 , WE)
0
--
--
0
--
--
ns
tE2LAX
t WR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
tWLOZ
tWHZ
Write to Output in High Z
0
--
25
0
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHOZ
tOHZ
Output Disable to Output in High Z
0
--
25
0
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
„ SWITCHING WAVEFORMS (WRITE CYCLE)
t WC
WRITE CYCLE1 (1)
ADDRESS
(3)
t WR1
OE
(11)
t CW
(5)
CE1
(5)
CE2
t
WE
t CW
(11)
t WR2
AW
t
t AS
(3)
WP
(2)
(4,10)
t OHZ
D OUT
t
t
DH
DW
D IN
R0201-BS62LV2005
6
Revision 2.4
April 2002
BSI
BS62LV2005
WRITE CYCLE2 (1,6)
t WC
ADDRESS
(11)
t CW
(5)
CE1
CE2
(5)
(11)
t
t CW
AW
t WR2
t WP
(3)
(2)
WE
t
t AS
DH
(4,10)
t WHZ
D OUT
(7)
(8)
t DW
t
DH
(8,9)
D IN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low.
All signals must be active to initiate a write and any one signal can terminate a write by going
inactive. The data input setup and hold timing should be referenced to the second transition edge
of the signal that terminates the write.
3. TWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the
outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL ).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data input
signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF as shown in Figure 1B. The
parameter is guaranteed but not 100% tested.
11. TCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BS62LV2005
7
Revision 2.4
April 2002
BSI
BS62LV2005
„ ORDERING INFORMATION
BS62LV2005
X X
ˀˀ Y Y
SPEED
70: 70ns
55: 55ns
GRADE
C: +0oC ~ +70oC
I: -40oC ~ +85oC
PACKAGE
T: TSOP (8mm x 20mm)
ST: Small TSOP (8mm x 13.4mm)
S: SOP
„ PACKAGE DIMENSIONS
STSOP - 32
R0201-BS62LV2005
8
Revision 2.4
April 2002
BSI
BS62LV2005
„ PACKAGE DIMENSIONS (continued)
TSOP - 32
WITH PLATING
b
c c1
BASE METAL
b1
SECTION A-A
SOP -32
R0201-BS62LV2005
9
Revision 2.4
April 2002
BSI
BS62LV2005
REVISION HISTORY
Revision
Description
Date
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ. and
Max.)
Jun. 29, 2001
2.4
Modify some AC parameters.
Modify 5V ICCSB1_Max(I-grade)
from 10uA to 25uA.
April,11,2002
R0201-BS62LV2005
10
Note
Revision 2.4
April 2002
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