Infineon BSB019N03LXG Optimos2 power-mosfet Datasheet

BSB019N03LX G
OptiMOSTM2 Power-MOSFET
Product Summary
Features
• Pb-free plating; RoHS compliant
• Dual sided cooling
V DS
30
V
R DS(on),max
1.9
mΩ
ID
174
A
• Low profile (<0.7 mm)
• Avalanche rated
• Qualified for consumer level application
MG-WDSON-2
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Optimized for high switching frequency DC/DC converter
• Low parasitic inductance
• Compatible with DirectFET® package MX footprint and outline 1)
Type
Package
Outline
Marking
BSB019N03LX G 2)
MG-WDSON-2
MX
1003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
174
V GS=10 V, T C=100 °C
110
V GS=10 V, T A=25 °C,
R thJA=45 K/W 2)
Unit
A
31
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche current, single pulse 4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
290
mJ
Gate source voltage
V GS
±20
V
1)
TM
CanPAK uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
BSB019N03LX G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
89
T A=25 °C,
T j, T stg
-40 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.8
R thJA=45 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
1.0
top
-
-
1.4
6 cm2 cooling area2)
-
-
45
30
-
-
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1
-
2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=25 A
-
2.5
3.1
mΩ
V GS=10 V, I D=30 A
-
1.6
1.9
-
1.0
-
Ω
60
120
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.0
See figure 3 for more detailed information
page 2
2009-05-11
BSB019N03LX G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6300
8400
-
2200
2900
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
280
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
7.8
-
Turn-off delay time
t d(off)
-
42
-
Fall time
tf
-
6.4
-
Gate to source charge
Q gs
-
18
-
Gate charge at threshold
Q g(th)
-
10
-
Gate to drain charge
Q gd
-
12
-
Switching charge
Q sw
-
19
-
Gate charge total
Qg
-
44
59
Gate plateau voltage
V plateau
-
2.8
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
92
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
38
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
50
-
-
-
89
-
-
400
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=30 A,
T j=25 °C
-
0.78
1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
50
nC
4)
5)
Rev. 2.0
T C=25 °C
A
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
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2009-05-11
BSB019N03LX G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
200
90
80
160
70
120
I D [A]
P tot [W]
60
50
40
80
30
20
40
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
160
T C [°C]
101
limited by on-state
resistance
1 µs
10 µs
102
100
100 µs
0.5
1 ms
Z thJC [K/W]
I D [A]
DC
101
10 ms
0.2
10-1
0.1
0.05
0.02
100
10-2
0.01
single pulse
10-1
10
10-3
-1
10
0
10
1
10
2
V DS [V]
Rev. 2.0
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
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BSB019N03LX G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
6
4.5 V
5V
3V
4V
250
5
10 V
3.2 V
4
150
R DS(on) [mΩ]
I D [A]
200
3.5 V
100
3.5 V
3
4V
4.5 V
5V
2
10 V
3.2 V
50
1
3V
2.8 V
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
300
250
320
200
I D [A]
g fs [S]
240
150
160
100
80
50
150 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 2.0
0
40
80
120
160
I D [A]
V GS [V]
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BSB019N03LX G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
4
2.5
3.5
2
2.5
98 %
1.5
V GS(th) [V]
R DS(on) [mΩ]
3
2
typ
1
1.5
1
0.5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
1000
104
25 °C
150 °C, 98%
Ciss
Coss
10
150 °C
I F [A]
C [pF]
100
3
25 °C, 98%
10
Crss
102
1
0
10
20
30
V DS [V]
Rev. 2.0
0.0
0.5
1.0
1.5
2.0
V SD [V]
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BSB019N03LX G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
25 °C
6V
24 V
100 °C
125 °C
V GS [V]
I AV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
40
80
120
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
37
V GS
35
Qg
33
V BR(DSS) [V]
31
28
V g s(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.0
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2009-05-11
BSB019N03LX G
Package Outline
Rev. 2.0
MG-WDSON-2
page 8
2009-05-11
BSB019N03LX G
Package Outline
MG-WDSON-2
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.0
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2009-05-11
BSB019N03LX G
MG-WDSON-2
Dimensions in mm
Reccomended stencil thickness 150 µm
Rev. 2.0
page 10
2009-05-11
BSB019N03LX G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
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(www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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Rev. 2.0
page 11
2009-05-11
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