BSB024N03LX G OptiMOSTM2 Power-MOSFET Product Summary Features • Pb-free plating; RoHS compliant • Dual sided cooling V DS 30 V R DS(on),max 2.4 mΩ ID 145 A • Low profile (<0.7 mm) • 100% avalanche tested • Qualified for consumer level application MG-WDSON-2 • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Optimized for high switching frequency DC/DC converter • Low parasitic inductance • Compatible with DirectFET® package MX footprint and outline 1) Type Package Outline Marking BSB024N03LX G MG-WDSON-2 MX 0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 145 V GS=10 V, T C=100 °C 92 V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Unit A 27 Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche current, single pulse 4) I AS T C=25 °C 50 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 220 mJ Gate source voltage V GS ±20 V 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. Rev. 2.0 page 1 2009-05-11 BSB024N03LX G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 78 T A=25 °C, T j, T stg -40 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.8 R thJA=45 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - 1.0 top - - 1.6 6 cm2 cooling area2) - - 45 30 - - Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 3.4 4.2 mΩ V GS=10 V, I D=30 A - 2.0 2.4 - 0.6 - Ω 50 100 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.0 See figure 3 for more detailed information page 2 2009-05-11 BSB024N03LX G Parameter Values Symbol Conditions Unit min. typ. max. - 4900 - - 1700 - Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 220 - Turn-on delay time t d(on) - 8.4 - Rise time tr - 7.0 - Turn-off delay time t d(off) - 35 - Fall time tf - 5.6 - Gate to source charge Q gs - 14 - Gate charge at threshold Q g(th) - 7.9 - Gate to drain charge Q gd - 9.6 - Switching charge Q sw - 16 - Gate charge total Qg - 35 - Gate plateau voltage V plateau - 2.9 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 72 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 30 - Output charge Q oss V DD=15 V, V GS=0 V - 39 - - - 78 - - 400 V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω pF ns Gate Charge Characteristics 5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.79 - Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 50 4) 5) Rev. 2.0 T C=25 °C A V nC See figure 13 for more detailed information See figure 16 for gate charge parameter definition page 3 2009-05-11 BSB024N03LX G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 90 160 80 70 120 50 I D [A] P tot [W] 60 40 80 30 40 20 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 102 100 100 µs 0.2 Z thJC [K/W] DC I D [A] 0.5 1 ms 101 10 ms 10-1 0.1 0.05 0.02 100 10-2 0.01 single pulse 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev. 2.0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-05-11 BSB024N03LX G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 6 560 3.2 V 5 480 5V 4.5 V 3.5 V 4 10 V 320 R DS(on) [mΩ] I D [A] 400 4V 240 4V 3 4.5 V 5V 10 V 2 160 3.5 V 1 3.2 V 80 3V 2.8 V 0 0 0 1 2 0 3 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 400 240 220 200 320 180 160 240 I D [A] g fs [S] 140 120 100 160 80 60 80 40 150 °C 20 25 °C 0 0 0 1 2 3 4 5 V GS [V] Rev. 2.0 0 40 80 120 160 I D [A] page 5 2009-05-11 BSB024N03LX G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 4 2.5 3.6 3.2 2 98 % 2.4 typ 2 1.5 V GS(th) [V] R DS(on) [mΩ] 2.8 1.6 1 1.2 0.8 0.5 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 1000 104 25 °C 150 °C, 98% Ciss 100 10 150 °C I F [A] C [pF] Coss 3 25 °C, 98% 10 Crss 102 1 0 10 20 30 V DS [V] Rev. 2.0 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2009-05-11 BSB024N03LX G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 6V 10 25 °C 100 °C 24 V 125 °C 8 V GS [V] I AV [A] 15 V 10 6 4 2 1 0 1 10 100 1000 0 40 t AV [µs] 80 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 36 V GS 34 Qg 32 V BR(DSS) [V] 30 28 V g s(th) 26 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.0 page 7 2009-05-11 BSB024N03LX G Rev. 2.0 page 8 2009-05-11 BSB024N03LX G Package Outline MG-WDSON-2 PG-TDSON-8: Tape Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSB024N03LX G MG-WDSON-2 Dimensions in mm Reccomended stencil thickness 150 µm Rev. 2.0 page 10 2009-05-11 BSB024N03LX G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11