Infineon BSC022N03SG Optimosâ ¢2 power-transistor Datasheet

BSC022N03S G
OptiMOS™2 Power-Transistor
Product Summary
Features
V DS
30
V
• Fast switching MOSFET for SMPS
R DS(on),max
2.2
mΩ
• Optimized technology for notebook DC/DC converters
ID
100
A
• Qualified according to JEDEC1 for target applications
PG-TDSON-8
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC022N03S G
PG-TDSON-8
22N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
100
T C=100 °C
100
T A=25 °C,
R thJA=45 K/W 2)
I D,pulse
T C=25 °C3)
200
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
800
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
T A=25 °C,
R thJA=45 K/W 2)
Operating and storage temperature
T j, T stg
Rev. 1.65
mJ
kV/µs
±20
V
104
W
2.8
-55 ... 150
IEC climatic category; DIN IEC 68-1
A
28
Pulsed drain current
T C=25 °C
Unit
°C
55/150/56
page 1
2009-10-22
BSC022N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.2
Thermal characteristics
Thermal resistance, junction - case
R thJC
bottom
top
Thermal resistance,
R thJA
junction - ambient
K/W
18
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
45
30
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=110 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=50 A
-
2.6
3.3
mΩ
V GS=10 V, I D=50 A
-
1.8
2.2
-
0.6
-
Ω
70
140
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=50 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
Rev. 1.65
page 2
2009-10-22
BSC022N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6230
8290
-
2210
2940
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
280
420
Turn-on delay time
t d(on)
-
10.4
16
Rise time
tr
-
9
14
Turn-off delay time
t d(off)
-
45
68
Fall time
tf
-
8
11
Gate to source charge
Q gs
-
17
23
Gate charge at threshold
Q g(th)
-
10
13
Gate to drain charge
Q gd
-
12
18
Switching charge
Q sw
-
19
28
Gate charge total
Qg
-
48
64
Gate plateau voltage
V plateau
-
2.8
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
42
56
Output charge
Q oss
V DD=15 V, V GS=0 V
-
50
66
-
-
50
-
-
200
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=15 V, I D=25 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.82
1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
20
nC
4)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 1.65
page 3
2009-10-22
BSC022N03S G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
120
100
100
80
80
I D [A]
P tot [W]
1 Power dissipation
60
60
40
40
20
20
0
0
0
40
80
120
160
0
40
T C [°C]
80
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
10 µs
102
100
0.5
Z thJC [K/W]
I D [A]
100 µs
1 ms
0.2
0.1
10 ms
101
10-1
0.05
0.02
DC
0.01
single pulse
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev. 1.65
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-10-22
BSC022N03S G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
7
200
10 V
4V
3V
3.2 V
3.7 V
6
160
3.4 V
4.5 V
5
R DS(on) [mΩ]
120
I D [A]
3.4 V
80
3.2 V
4
3.7 V
4V
3
4.5 V
2
10 V
3V
40
1
2.8 V
0
0
0
1
2
0
3
50
V DS [V]
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
160
120
I D [A]
g fs [S]
120
80
80
40
40
150 °C
25 °C
2
3
0
0
0
1
4
5
Rev. 1.65
0
50
100
150
I D [A]
V GS [V]
page 5
2009-10-22
BSC022N03S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
2.4
2
3
1100 µA
1.6
2
V GS(th) [V]
R DS(on) [mΩ]
98 %
typ
110 µA
1.2
0.8
1
0.4
0
0
-60
-10
40
90
140
190
-60
-10
40
90
140
190
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
150 °C
25 °C
Coss
150 °C, 98%
2
I F [A]
C [pF]
10
103
25 °C, 98%
1000
101
Crss
102
100
100
0
10
20
30
V DS [V]
Rev. 1.65
0
0.5
1
1.5
2
V SD [V]
page 6
2009-10-22
BSC022N03S G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
25 °C
100 °C
6V
24 V
8
V GS [V]
I AV [A]
125 °C
10
6
4
2
1
0
1
10
100
1000
0
25
50
75
100
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
35
V GS
Qg
V BR(DSS) [V]
32
29
V g s(th)
26
23
Q g(th)
Q sw
Q gs
20
-60
-10
40
90
140
Q g ate
Q gd
190
T j [°C]
Rev. 1.65
page 7
2009-10-22
BSC022N03S G
Package Outline
PG-TDSON-8
P-TDSON-8: Outline
Rev. 1.65
page 8
2009-10-22
BSC022N03S G
Package Outline
P-TDSON-8: Tape
Dimensions in mm
Rev. 1.65
page 9
2009-10-22
BSC022N03S G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.65
page 10
2009-10-22
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