BSC190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS(on),max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type Package Marking BSC190N12NS3 G PG-TDSON-8 190N12NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 44 T C=100 °C 27 T A=25 °C, R thJA=45 K/W 2) Unit A 8.6 Pulsed drain current3) I D,pulse T C=25 °C 176 Avalanche energy, single pulse E AS I D=39 A, R GS=25 Ω 60 mJ Gate source voltage V GS ±20 V Power dissipation P tot 69 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) Rev. 2.5 55/150/56 J-STD20 and JESD22 page 1 2009-10-30 BSC190N12NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.8 top - - 18 minimal footprint - - 62 6 cm2 cooling area2) - - 45 120 - - Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=42 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=39 A - 16.6 19 mΩ Gate resistance RG - 1 - Ω Transconductance g fs 23 45 - S |V DS|>2|I D|R DS(on)max, I D=39 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.5 see figure 3 page 2 2009-10-30 BSC190N12NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1700 2300 - 210 280 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 13 - Turn-on delay time t d(on) - 17 - Rise time tr - 16 - Turn-off delay time t d(off) - 22 - Fall time tf - 4 - Gate to source charge Q gs - 9 - Gate to drain charge Q gd - 6 - - 10 - V GS=0 V, V DS=60 V, f =1 MHz V DD=60 V, V GS=10 V, I D=20 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=60 V, I D=20 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 26 34 Gate plateau voltage V plateau - 5.1 - Output charge Q oss - 29 38 nC - - 44 A - - 176 - 0.9 1.2 - 81 - 211 V DD=60 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 2.5 T C=25 °C V GS=0 V, I F=39 A, T j=25 °C V R=60 V, I F=20A , di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition page 3 2009-10-30 BSC190N12NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 50 40 60 I D [A] P tot [W] 30 40 20 20 10 0 0 0 40 80 120 160 0 40 T C [°C] 80 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 100 ns 1 µs 102 10 µs 100 10 Z thJC [K/W] I D [A] 100 µs 1 1 ms 0.5 0.2 0.1 0.05 10-1 0.02 0.01 100 DC single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.5 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-10-30 BSC190N12NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 50 10 V 7V 45 5V 40 6V 5.5 V 60 35 R DS(on) [mΩ] I D [A] 6V 40 5.5 V 30 25 7V 20 10 V 15 20 10 5V 5 4.5 V 0 0 0 1 2 3 4 5 0 20 40 V DS [V] 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 160 80 120 60 g fs [S] I D [A] parameter: T j 80 40 40 20 150 °C 25 °C 0 0 0 2 4 6 8 Rev. 2.5 0 20 40 60 80 100 I D [A] V GS [V] page 5 2009-10-30 BSC190N12NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=39 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 40 4 3.5 420 µA 30 3 V GS(th) [V] R DS(on) [mΩ] 42 µA 2.5 98 % 20 typ 2 1.5 10 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 Coss 25 °C 150 °C I F [A] C [pF] 100 102 Crss 150 °C, 98% 10 101 25 °C, 98% 100 1 0 20 40 60 80 Rev. 2.5 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2009-10-30 BSC190N12NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=39 A pulsed parameter: T j(start) parameter: V DD 102 10 96 V 8 60 V 25 °C 24 V 100 °C V GS [V] I AS [A] 6 101 4 125 °C 2 100 0 100 101 102 103 0 10 t AV [µs] 20 30 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 135 V GS Qg 130 V BR(DSS) [V] 125 120 V g s(th) 115 110 Q g(th) Q sw Q gs 105 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.5 page 7 2009-10-30 BSC190N12NS3 G Package Outline: PG-TDSON-8 Rev. 2.5 page 8 2009-10-30 BSC190N12NS3 G Dimensions in mm Rev. 2.5 page 9 2009-10-30 BSC190N12NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.5 page 10 2009-10-30