Preliminary Data BSO 302SN SIPMOS Small-Signal-Transistor Features Product Summary • Single N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.013 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 9.8 A • Logic Level • dv/dt rated Type Package Ordering Code BSO 302SN SO 8 Q67041-S4029 Maximum Ratings, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current ID 9.8 IDpulse 39.2 EAS 250 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 9.8 A EAR 0.2 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ± 20 V Power dissipation Ptot 2 W ˚C A T C = 25 ˚C Pulsed drain current T C = 25 ˚C Avalanche energy, single pulse I D = 9.8 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 9.8 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C T C = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSO 302SN Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 25 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 75 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS I D = 80 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA µA VDS = 30 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 30 V, V GS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 8.6 A - 0.012 0.017 VGS = 10 V, I D = 9.8 A - 0.008 0.013 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 302SN Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs 14 28 - S Ciss - 1630 2040 pF Coss - 710 890 Crss - 335 420 td(on) - 20 30 tr - 120 180 td(off) - 37 55 ns tf - 72 110 ns Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 8.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω Rise time VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω Fall time VDD = 15 V, V GS = 4.5 V, ID = 8.6 A, RG = 1.6 Ω Data Sheet 3 05.99 BSO 302SN Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. QG(th) - 2 3 Gate charge at Vgs=5V VDD = 24 V, ID = 9.8 A , VGS = 0 to 5 V Qg(5) - 37 55 Gate charge total Qg - 60 90 V(plateau) - 2.95 - V IS - - 9.8 A I SM - - 39.2 VSD - 0.9 1.6 V t rr - 70 105 ns Q rr - 80 120 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 24 V, ID≥0,1 A, VGS = 0 to 1 V nC VDD = 15 V, ID = 9.8 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 9.8 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 19.6 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 302SN Power dissipation Drain current Ptot= f (TA) ID = f (TA ) BSO 302SN BSO 302SN 2.6 11 W A 2.2 9 2.0 8 ID Ptot 1.8 1.6 7 6 1.4 1.2 5 1.0 4 0.8 3 0.6 2 0.4 1 0.2 0.0 0 20 40 60 80 100 ˚C 120 0 0 160 20 40 60 80 100 120 ˚C TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f(tp ) parameter : D = 0 , TA = 25 ˚C 10 2 BSO 302SN = S( on VD parameter : D= tp/T S 10 2 ) BSO 302SN tp = 2.2µs RD A 160 K/W 10 µs 10 1 Z thJA ID 100 µs 1 ms 10 10 1 0 D = 0.50 10 ms 0.20 10 0 0.10 single pulse 10 -1 0.02 DC 10 -2 -1 10 10 0 10 1 0.01 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Data Sheet 0.05 s 10 4 tp 5 05.99 BSO 302SN Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 8.6 A, VGS = 4.5 V BSO 302SN A 20 BSO 302SN 0.040 Ptot = 2W Ω jh ig f lked c VGS [V] a 2.5 18 ID 16 14 12 10 8 6 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 b i 6.5 j 7.0 k 8.0 l 10.0 0.032 RDS(on) 24 0.028 0.024 98% 0.020 0.016 typ 0.012 0.008 4 2 0.004 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.000 -60 5.0 VDS -20 20 60 100 140 ˚C 200 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 pF C Ciss 10 3 Coss Crss 10 2 0 5 10 15 20 V 30 VDS Data Sheet 6 05.99 BSO 302SN Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 80 µA 20 3.0 V A 16 VGS(th) 2.4 ID 14 12 2.2 2.0 1.8 1.6 10 1.4 8 1.2 max 1.0 6 0.8 4 typ 0.6 0.4 min 2 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 -60 5.0 VGS -20 20 60 100 V 160 Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 302SN A IF 10 1 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 302SN Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 9.8 A, VDD = 25 V RGS = 25 Ω VGS = f (Q Gate) parameter: ID puls = 9.8 A BSO 302SN 260 16 mJ V 220 200 12 VGS EAS 180 160 10 140 8 120 100 0,2 VDS max 6 0,8 VDS max 80 4 60 40 2 20 0 20 40 60 80 100 ˚C 120 Drain-source breakdown voltage 0 0 160 Tj 10 20 30 40 50 60 70 nC 85 Q Gate V(BR)DSS = f (Tj) BSO 302SN 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99