Infineon BSO150N03 Optimosâ ¢2 power-transistor Datasheet

BSO150N03
OptiMOS™2 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
V DS
30
V
R DS(on),max
15
mΩ
ID
9.1
A
1)
• Qualified according to JEDEC for target applications
PG-DSO-8
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSO150N03
PG-DSO-8
150N3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Value
Symbol Conditions
ID
Unit
10 secs
steady state
T A=25 °C2)
9.1
7.6
T A=70 °C2)
7.3
6.1
A
Pulsed drain current
I D,pulse
T A=25 °C3)
36
Avalanche energy, single pulse
E AS
I D=9.1 A, R GS=25 Ω
82
mJ
Reverse diode dv /dt
dv /dt
I D=9.1 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
±20
T A=25 °C2)
1.4
-55 ... 150
W
°C
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 1.7
2.0
V
page 1
2010-05-11
BSO150N03
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
50
minimal footprint,
t p≤10 s
-
-
110
minimal footprint,
steady state
-
-
150
6 cm2 cooling area2),
t p≤10 s
-
-
63
6 cm2 cooling area2),
steady state
-
-
90
30
-
-
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
Thermal resistance,
junction - ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=25 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=8.4 A
-
15.2
19
mΩ
V GS=10 V, I D=9.1 A
-
12.5
15
-
1.5
-
Ω
13
26
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=9.1 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 1.7
See figure 3
page 2
2010-05-11
BSO150N03
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1420
1890
-
510
680
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
67
100
Turn-on delay time
t d(on)
-
5.3
7.9
Rise time
tr
-
4.0
6.0
Turn-off delay time
t d(off)
-
21
31
Fall time
tf
-
3.0
4.5
Gate to source charge
Q gs
-
3.9
5.2
Gate charge at threshold
Q g(th)
-
2.3
3.0
Gate to drain charge
Q gd
-
2.6
4.0
Switching charge
Q sw
-
4.3
6.1
Gate charge total
Qg
-
11
15
Gate plateau voltage
V plateau
-
2.8
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
9.6
13
Output charge
Q oss
V DD=15 V, V GS=0 V
-
12
16
-
-
2
-
-
36
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=4.5 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=15 V, I D=4.5 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=2 A,
T j=25 °C
-
0.75
1
V
Reverse recovery charge
Q rr
V R=12 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
4)
Rev. 1.7
T A=25 °C
A
See figure 16 for gate charge parameter definition
page 3
2010-05-11
BSO150N03
1 Power dissipation
2 Drain current
P tot=f(T A); t p≤10 s
I D=f(T A); V GS≥10 V; t p≤10 s
10
2
8
1.5
6
I D [A]
P tot [W]
2.5
1
4
0.5
2
0
0
0
40
80
120
160
0
40
80
T A [°C]
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
102
160
T A [°C]
102
100
100
10 µs
100 µs
101
0.5
10
1 ms
10 ms
100
1
limited by on-state
resistance
10 s
10-1
0.2
10
0.1
Z thJS [K/W]
I D [A]
101
0.05
100
1
0.1
0.02
0.01
DC
single pulse
10-2
Rev. 1.7
0.01
0.1
1
10
100
10-1
100
101
102
V DS [V]
page 4
10-1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
10-5
10-4
10-3
10-2
10-1
100
101
t p [s]
2010-05-11
BSO150N03
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
20
30
10 V
3.6 V
3.4 V
4.5 V
3.3 V
16
3.8 V
3.2 V
20
R DS(on) [mΩ]
12
I D [A]
3.1 V
3V
8
4V
4.2 V
4.5 V
5V
10 V
10
4
2.8 V
2.6 V
0
0
0
1
2
3
0
10
V DS [V]
20
30
20
30
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
35
50
30
40
25
30
I D [A]
g fs [S]
20
15
20
10
10
125 °C
5
25 °C
0
0
0
1
2
3
4
Rev. 1.7
0
10
I D [A]
V GS [V]
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BSO150N03
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=9.1 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
25
2.5
20
2
250 µA
15
V GS(th) [V]
R DS(on) [mΩ]
98 %
typ
10
5
1.5
25 µA
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
100
10000
150 °C
25 °C
Ciss
103
10
1000
150 °C, 98 %
I F [A]
C [pF]
Coss
102
1
100
Crss
25 °C, 98%
0.1
10
0
5
10
15
20
25
30
Rev. 1.7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V SD [V]
V DS [V]
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2010-05-11
BSO150N03
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=4.5 A pulsed
parameter: T j(start)
parameter: V DD
10
12
125 °C
100 °C
25 °C
15 V
10
6V
24 V
V GS [V]
I AV [A]
8
1
6
4
2
0.1
0
1
10
100
1000
0
4
8
12
16
20
24
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
36
V GS
34
Qg
32
V BR(DSS) [V]
30
28
V g s(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.7
page 7
2010-05-11
BSO150N03
Package Outline
Rev. 1.7
PG-DSO-8
page 8
2010-05-11
BSO150N03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
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Rev. 1.7
page 9
2010-05-11
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