Infineon BSO207P Optimos -p small-signal-transistor Datasheet

BSO207P
Preliminary data
OptiMOS-P Small-Signal-Transistor
Product Summary
Feature
• Dual P-Channel
• Enhancement mode
VDS
-20
V
RDS(on)
45
mΩ
ID
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Top View
Type
Package
Ordering Code
BSO207P
SO 8
Q67042-S4068
-5.7
A
SIS00070
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
-5.7
TA=70°C
-4.6
Pulsed drain current
ID puls
Unit
-22.8
TA=25°C
EAS
44
mJ
dv/dt
-6
kV/µs
Gate source voltage
VGS
±12
V
Power dissipation
Ptot
2
W
-55... +150
°C
Avalanche energy, single pulse
ID =-5.7 A , VDD =-10V, RGS =25Ω
Reverse diode dv/dt
IS =-5.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
2001-11-20
BSO207P
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
50
@ min. footprint, t < 10s
-
-
110
@ 6 cm 2 cooling area
-
-
62.5
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
1)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-20
-
-
VGS(th)
-0.6
-0.9
-1.2
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =-250µA
Gate threshold voltage, VGS = VDS
ID =-40µA
Zero gate voltage drain current
µA
IDSS
VDS =-20V, VGS =0, Tj =25°C
-
-0.1
-1
VDS =-20V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
47
70
mΩ
RDS(on)
-
32
45
Gate-source leakage current
VGS =-12V, VDS =0
Drain-source on-state resistance
VGS =-2.5V, ID =-4.7A
Drain-source on-state resistance
VGS =-4.5, ID =-5.7A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤10 sec.
Page 2
2001-11-20
BSO207P
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
8
16
-
S
pF
Dynamic Characteristics
Transconductance
gfs
çVDS ç≥2*çIDç*RDS(on)max
ID =-4.6A
Input capacitance
Ciss
VGS =0, VDS =-15V,
-
1013
-
Output capacitance
Coss
f=1MHz
-
388
-
Reverse transfer capacitance
Crss
-
318
-
Turn-on delay time
td(on)
VDD =-10V, VGS =-4.5V,
-
9
13.5
Rise time
tr
ID =-1A, RG=6Ω
-
17
25
Turn-off delay time
td(off)
-
40
60
Fall time
tf
-
49
65
-
-1.8
-2.7
-
-7.3
-11
-
-15.6
-23.4
V(plateau) VDD =-15V, ID =-5.7A
-
-1.7
-
V
IS
-
-
-2.2
A
-
-
-22.8
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-15V, ID =-5.7A
VDD =-15V, ID =-5.7A,
nC
VGS =0 to -4.5V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0, |IF | = |ID |
-
-0.88
Reverse recovery time
trr
VR =-10V, |IF | = |lD |,
-
29
36
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
12.3
15.4
nC
Page 3
-1.32 V
2001-11-20
BSO207P
Preliminary data
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA )
parameter: |VGS |≥ 4.5 V
2.6
BSO207P
-6.5
A
2.2
-5.5
2
-5
1.8
-4.5
ID
Ptot
W
BSO207P
1.6
-4
1.4
-3.5
1.2
-3
1
-2.5
0.8
-2
0.6
-1.5
0.4
-1
0.2
-0.5
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TC
160
TC
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJS = f (tp )
parameter : D = 0 , TA = 25 °C
parameter : D = tp /T
-10
°C
2 BSO207P
10 2
BSO207P
K/W
/I D
A
=
10 1
100 µs
)
1 ms
Z thJS
R
tp = 57.0µs
S
ID
-10 1
n
(o
DS
VD
10 ms
-10 0
10 0
10 -1
D = 0.50
0.20
10
-2
0.10
0.05
-10 -1
single pulse
DC
0.02
10 -3
-10 -2 -1
-10
-10
0
-10
1
V
-10
2
VDS
10 -4 -7
10
0.01
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2001-11-20
BSO207P
Preliminary data
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
BSO207P
-14
A
BSO207P
150
Ptot = 2W
mΩ
c
h
-11
g
b
ID
e
f
g
-9
-2.0
d
-2.1
f e
-2.2
-8
-7
e
-6
120
-1.9
c
-10
110
100
f
-2.3
90
g
-2.4
80
h
-2.5
i
-4.5
70
60
-5
d
40
c
-3
h
50
-4
i
30
b
-2
20 VGS [V] =
a
-1
0
0
d
VGS [V]
a
-1.8
RDS(on)
-12
i
-0.5
-1
-1.5
-2
-2.5 -3
10
-3.5 -4
V
0
0
-5
c
d
e
f
-2.0 -2.1 -2.2 -2.3
-2
g
h
i
-2.4 -2.5 -4.5
-4
-6
-8
-10
A
VDS
-13
ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: tp = 80 µs
35
A
S
25
25
- ID
g fs
35
20
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
V
0
0
3
- V GS
5
10
15
20
25
35
A
- ID
Page 5
2001-11-20
BSO207P
Preliminary data
9 Drain-source on-resistance
10 Gate threshold voltage
RDS(on) = f(Tj )
VGS(th) = f (Tj)
parameter: ID = -5.7 A, VGS = -4.5 V
parameter: VGS = VDS , ID = -40 µA
60
1.6
V
mΩ
- VGS(th)
RDS(on)
98%
50
45
40
1.2
98%
1
0.8
typ.
typ.
35
0.6
30
0.4
25
0.2
20
-60
-20
20
60
100
2%
0
-60
°C 160
Tj
-20
20
60
100
°C 160
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
-10 2
BSO207P
A
pF
C
IF
-10 1
Ciss
10
3
Coss
-10 0
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 2
0
2.5
5
7.5
10
V
15
- VDS
-10 -1
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2001-11-20
BSO207P
Preliminary data
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj ), par.: ID = -5.7 A
|VGS| = f (QGate )
VDD = -10 V, RGS = 25 Ω
parameter: ID = -5.7 A pulsed
45
12
V
mJ
10
9
- VGS
E AS
35
30
8
7
25
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
6
20
5
15
4
3
10
2
5
1
0
25
45
65
85
105
125
165
°C
Tj
0
0
4
8
12
16
20
24
nC 30
|QGate |
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
-24.5
BSO207P
V
V (BR)DSS
-23.5
-23
-22.5
-22
-21.5
-21
-20.5
-20
-19.5
-19
-18.5
-18
-60
-20
20
60
100
°C
180
Tj
Page 7
2001-11-20
Preliminary data
BSO207P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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Page 8
2001-11-20
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