Infineon BSO303SP Optimos -p small-signal-transistor Datasheet

BSO303SP
Preliminary data
OptiMOS-P Small-Signal-Transistor
Product Summary
Feature
• P-Channel
• Enhancement mode
VDS
-30
V
RDS(on)
21
mΩ
ID
• Logic Level
-8.9
A
• 150°C operating temperature
• Avalanche rated
S
1
8
D
• dv/dt rated
S
2
7
D
S
3
6
D
G
4
5
D
Top View
Type
Package
Ordering Code
BSO303SP
SO 8
Q67042-S4129
SIS00062
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TA=25°C
-8.9
TA=70°C
-7.1
Pulsed drain current
ID puls
Unit
-35.6
TA=25°C
EAS
97
mJ
dv/dt
-6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
2.35
W
-55... +150
°C
Avalanche energy, single pulse
ID =-8.9 A , VDD =-25V, RGS =25Ω
Reverse diode dv/dt
IS =-8.9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
2002-01-08
BSO303SP
Preliminary data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
35
@ min footprint, t < 10s
-
-
110
@ 6 cm 2 cooling area
-
-
53
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
1)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-30
-
-
VGS(th)
-1
-1.5
-2
Static Characteristics
Drain-source breakdown voltage
V
VGS =0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID =-100µA
Zero gate voltage drain current
µA
IDSS
VDS =-30V, VGS =0, Tj =25°C
-
-0.1
-1
VDS =-30V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
24
31
mΩ
RDS(on)
-
15
21
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-4.5V, ID =-7.3A
Drain-source on-state resistance
VGS =-10V, ID =-8.9A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤10 sec.
Page 2
2002-01-08
BSO303SP
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
12
24
-
S
pF
Dynamic Characteristics
Transconductance
gfs
çVDS ç≥2*çIDç*RDS(on)max
ID =-7.1A
Input capacitance
Ciss
VGS =0, VDS =-25V,
-
1754
-
Output capacitance
Coss
f=1MHz
-
465
-
Reverse transfer capacitance
Crss
-
389
-
Turn-on delay time
td(on)
VDD =-15V, VGS =-10V,
-
10.3
15.5
Rise time
tr
ID =-1A, RG=6Ω
-
12.5
19
Turn-off delay time
td(off)
-
53
80
Fall time
tf
-
40.3
60.5
-
-4.1
-6.2
-
-15.8
-26
-
-46
-69
V(plateau) VDD =-24V, ID =-8.9A
-
-2.4
-
V
IS
-
-
-3.5
A
-
-
-35.6
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-24V, ID =-8.9A
VDD =-24V, ID =-8.9A,
nC
VGS =0 to -10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0, |IF | = |ID |
-
-0.87
Reverse recovery time
trr
VR =-15V, |IF | = |lD |,
-
25
37
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
11.7
17.6
nC
Page 3
-1.09 V
2002-01-08
BSO303SP
Preliminary data
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA )
parameter: |VGS |≥ 10 V
2.6
BSO303SP
-10
W
BSO303SP
A
2.2
-8
2
-7
ID
Ptot
1.8
1.6
-6
1.4
-5
1.2
1
-4
0.8
-3
0.6
-2
0.4
-1
0.2
0
0
20
40
60
80
100
°C
120
0
0
160
20
40
60
80
100
120
TA
4 Transient thermal impedance
ID = f ( VDS )
ZthJS = f (tp )
parameter : D = 0 , TA = 25 °C
-10
parameter : D = tp /T
/I D
=
A
S(
o
V
160
TA
3 Safe operating area
2 BSO303SP
°C
10 2
DS
BSO303SP
K/W
tp = 76.0µs
n)
100 µs
RD
10 1
-10 1
Z thJS
ID
1 ms
10 ms
-10 0
10 0
10 -1
D = 0.50
0.20
10
-2
0.10
0.05
-10 -1
0.02
DC
10 -3
0.01
single pulse
-10 -2 -1
-10
-10
0
-10
1
V
-10
2
VDS
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2002-01-08
BSO303SP
Preliminary data
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
0.1
30
Vgs = - 3V
Ω Vgs = - 3.5V
Vgs= - 3.5V
Vgs= - 4V
Vgs= - 4.5V
Vgs= - 5V
Vgs= - 6V
Vgs= - 10V
20
RDS(on)
- ID
A
Vgs= -3V
15
Vgs = - 4V
Vgs = - 4.5V
0.08 Vgs= - 5V
Vgs = - 5.5V
0.07 Vgs = - 6V
Vgs = - 8V
0.06 Vgs = - 10V
0.05
0.04
10
0.03
0.02
5
Vgs= -2.5V
0.01
0
0
1
2
3
4
5
6
0
0
V 7.5
- V DS
2
4
6
8
10
12
14
16
8 Typ. forward transconductance
ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: tp = 80 µs
40
40
A
S
30
30
g fs
- ID
7 Typ. transfer characteristics
25
25
20
20
15
15
10
10
5
5
0
0
0.5
1
1.5
2
2.5
3
0
0
4
V
- V GS
Page 5
A 20
- ID
5
10
15
20
25
30
40
A
- ID
2002-01-08
BSO303SP
Preliminary data
9 Drain-source on-resistance
10 Typ. gate threshold voltage
RDS(on) = f(Tj )
VGS(th) = f (Tj)
parameter: ID = -8.9 A, VGS = -10 V
parameter: VGS = VDS
2.5
30
mΩ
RDS(on)
max
98%
25
typ
22.5
1.5
20
typ.
1
17.5
min
15
0.5
12.5
10
-60
-20
20
60
100
°C
0
-60
160
-20
20
60
100
160
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
-10 2
BSO303SP
A
pF
Ciss
C
IF
-10 1
10 3
Coss
-10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 2
0
5
10
15
20
V
30
- V DS
-10 -1
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2002-01-08
BSO303SP
Preliminary data
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj ), par.: ID = -8.9 A
VGS = f (QGate )
VDD = -25 V, RGS = 25 Ω
parameter: ID = -8.9 A pulsed
100
-16
mJ
BSO303SP
V
80
VGS
E AS
-12
70
60
50
-10
-8 0.2 VDS max
0.5 VDS max
40
-6
0.8 VDS max
30
-4
20
-2
10
0
25
50
75
100
150
°C
Tj
0
0
10
20
30
40
50
nC
70
|QGate |
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
-36
BSO303SP
V (BR)DSS
V
-34
-33
-32
-31
-30
-29
-28
-27
-60
-20
20
60
100
°C
180
Tj
Page 7
2002-01-08
Preliminary data
BSO303SP
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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Page 8
2002-01-08
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