Infineon BSO615CT Sipmos small-signal-transistor Datasheet

Preliminary data
BSO 615 C
SIPMOS  Small-Signal-Transistor
Features
Product Summary
• Dual N- and P -Channel
Drain source voltage
VDS
•
Drain-Source on-state
Enhancement mode
• Logic Level
resistance
• Avalanche rated
Continuous drain current
N
P
60
-60
V
RDS(on)
0.11
0.3
Ω
ID
3.1
-2
A
• dv/dt rated
Type
Package
Ordering Code
BSO 615 C
SO 8
Q67041-S4024
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
N
Unit
P
ID
Continuous drain current
A
T A = 25 °C
3.1
-2
T A = 70 °C
2.5
-1.6
12.4
-8
I D puls
Pulsed drain current
T A = 25 °C
EAS
Avalanche energy, single pulse
I D = 3.1 A , VDD = 25 V, R GS = 25 Ω
I D = -2 A , VDD = -25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt, T jmax = 150 °C
EAR
mJ
47
-
-
70
0.2
0.2
dv/dt
kV/µs
I S = 3.1 A, V DS = 48 V, di/dt = 200 A/µs
6
-
I S = -2 A, V DS = -48 V, di/dt = -200 A/µs
-
6
Gate source voltage
VGS
±20
±20
V
Power dissipation
Ptot
2
2
W
T A = 25 °C
T j , T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55...+150
°C
55/150/56
Page 1
1999-10-28
Preliminary data
BSO 615 C
Termal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
40
-
-
40
Dynamic Characteristics
Thermal resistance, junction - soldering point
( Pin 4)
N RthJS
P
K/W
RthJA
SMD version, device on PCB:
@ min. footprint; t ≤ 10 sec.
N
-
-
100
@ 6 cm 2 cooling area 1) ; t ≤ 10 sec.
N
-
-
62.5
@ min. footprint; t ≤ 10 sec.
P
-
-
110
@ 6 cm 2 cooling area 1) ; t ≤ 10 sec.
P
-
-
62.5
Static Characteristics, at Tj = 25 °C, unless otherwise specified
V(BR)DSS
Drain- source breakdown voltage
V
VGS = 0 V, ID = 250 µA
N
60
-
-
VGS = 0 V, ID = -250 µA
P
-60
-
-
Gate threshold voltage, VGS = VDS
ID = 20 µA
VGS(th)
N
1.2
1.6
2.0
ID = -450 µA
P
-1
-1.5
-2.0
IDSS
Zero gate voltage drain current
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C
N
-
0.1
1
VDS = 60 V, VGS = 0 V, Tj = 125 °C
N
-
10
100
VDS = -60 V, VGS = 0 V, Tj = 25 °C
P
-
-0.1
-1
VDS = -60 V, VGS = 0 V, Tj = 125 °C
P
-
-10
-100
IGSS
Gate-source leakage current
nA
VGS = 20 V, VDS = 0 V
N
-
10
100
VGS = -20 V, VDS = 0 V
P
-
-10
-100
Ω
RDS(on)
Drain-Source on-state resistance
VGS = 4.5 V, ID = 2.7 A
N
-
0.1
0.15
VGS = -4.5 V, ID = -1.7 A
P
-
0.27
0.45
RDS(on)
Drain-Source on-state resistance
VGS = 10 V, ID = 3.1 A
N
-
0.07
0.11
VGS = -10 V , ID = -2 A
P
-
0.19
0.3
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
1999-10-28
Preliminary data
BSO 615 C
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
gfs
Transconductance
S
VDS≥2 * I D * R DS(on)max, ID = 2.7 A
N
2.25
5.5
-
VVDS≥2 * I D * R DS(on)max, ID = -1.7 A
P
1.2
2.4
-
Ciss
Input capacitance
pF
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
300
380
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
365
460
Coss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
90
120
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
105
135
Crss
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
N
-
50
65
VGS = 0 V, V DS = -25 V, f = 1 MHz
P
-
40
50
td(on)
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 Ω
N
-
16
24
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 Ω
P
-
24
36
tr
Rise time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 Ω
N
-
75
115
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 Ω
P
-
105
160
td(off)
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 Ω
N
-
25
40
VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 Ω
P
-
125
190
tf
Fall time
VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 Ω
N
-
18
27
VDD = -30 V, V GS = -4.5 V, I D = -1.7 , R G = 13 Ω
P
-
90
135
Page 3
1999-10-28
Preliminary data
BSO 615 C
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Characteristics
Qgs
Gate to source charge
nC
VDD = 48 V, ID = 3.1 A
N
-
0.5
0.75
VDD = -48 V, ID = -2 A
P
-
1.7
2.6
Qgd
Gate to drain charge
VDD = 48 V, ID = 3.1 A
N
-
6.3
9.5
VDD = -48 V, ID = -2 A
P
-
4.3
6.5
Qg
Gate charge total
VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V
N
-
15
22.5
VDD = -48 V, ID = -2 A, VGS = 0 to -10V
P
-
13.5
20
V(plateau)
Gate plateau voltage
V
VDD = 48 V, ID = 3.1 A
N
-
3.1
-
VDD = -48 V, ID = -2 A
P
-
-2.8
-
Inverse diode continuous forward current
N IS
-
-
3.1
T A = 25 °C
P
-
-
-2
Inverse diode direct current,pulsed
N ISM
-
-
12.4
T A = 25 °C
P
-
-
-8
Reverse Diode
VSD
Inverse diode forward voltage
V
VGS = 0 V, I F = I S
N
-
0.8
1.1
VGS = 0 V, I F = I S
P
-
-0.8
-1.1
trr
Reverse recovery time
ns
VR = 30 V, IF=l S, di F/dt = 100 A/µs
N
-
50
75
VR = -30 V, IF=l S , diF/dt = -100 A/µs
P
-
85
130
Qrr
Reverse recovery charge
µC
VR = 30 V, IF=l S , diF/dt = 100 A/µs
N
-
70
105
VR = -30 V, I F=lS, diF/dt = -100 A/µs
P
-
120
180
Page 4
A
1999-10-28
Preliminary data
BSO 615 C
Power Dissipation (N-Ch.)
Power Dissipation (P-Ch.)
Ptot = f (TA)
Ptot = f (TA )
BSO 615 C
BSO 615 C
2.2
2.2
W
1.8
1.8
1.6
1.6
Ptot
Ptot
W
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0
20
40
60
80
100
120
°C
0.0
0
160
20
40
60
80
100
120
TA
160
TA
Drain current (N-Ch.)
Drain current (P-Ch.)
I D = f (T A)
ID = f (TA)
parameter: VGS≥ 10 V
parameter: VGS ≥ -10 V
BSO 615 C
BSO 615 C
3.4
-2.2
A
A
2.8
-1.8
-1.6
ID
2.4
ID
°C
2.0
-1.4
-1.2
1.6
-1.0
1.2
-0.8
-0.6
0.8
-0.4
0.4
0.0
0
-0.2
20
40
60
80
100
120
°C
0.0
0
160
TA
20
40
60
80
100
120
°C
160
TA
Page 5
1999-10-28
Preliminary data
BSO 615 C
Safe operating area (N-Ch.)
Safe operating area (P-Ch.)
I D = f ( VDS )
ID = f ( VDS )
parameter : D = 0 , T A = 25 °C
parameter : D = 0 , TA = 25 °C
10 2
BSO 615 C
-10 1
BSO 615 C
tp = 90.0µs
100 µs
/I
D
A
S(
on
V
=
1 ms
on
)
S
10 µs
)
-10 0
100 µs
ID
ID
RD
VD
DS
(
=
R
10 1
DS
A
tp = 4.7µs
/I D
10 ms
1 ms
10 0
10 ms
-10 -1
10 -1
DC
DC
10 -2 -1
10
10
0
10
1
V
10
-10 -2 -1
-10
2
-10
0
-10
1
V
VDS
-10
VDS
Transient thermal impedance (N-Ch.)
Transient thermal impedance (P-Ch.)
Z thJC = f(t p)
ZthJC = f(tp)
parameter : D = tp/T
parameter : D = tp /T
10
2
2
BSO 615 C
10 2
BSO 615 C
K/W
K/W
Z thJC
Z thJC
10 1
10 1
10 0
10
D = 0.50
D = 0.50
0.20
0.20
0.10
0.10
0
0.05
single pulse
10 -1 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
1
10 -1
0.05
single pulse
0.02
0.02
0.01
0.01
s
10
10 -2 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
3
tp
10
1
s
10
3
tp
Page 6
1999-10-28
Preliminary data
BSO 615 C
Typ. output characteristics (N-Ch.)
Typ. output characteristics (P-Ch.)
I D = f (VDS)
ID = f (VDS )
parameter: tp = 80 µs
parameter: tp = 80 µs
BSO 615 C
7.5
BSO 615 C
-5.0
Ptot = 2.00W
A
A
VGS [V]
a
2.5
6.0
5.5
e
5.0
b
2.7
c
3.0
d
3.2
e
3.5
4.5
f
3.7
4.0
g
4.0
g
f
VGS [V]
a
-2.5
e
-4.0
b
-2.7
c
-3.0
d
-3.2
e
-3.5
d f
-3.7
g
-4.0
-3.5
ID
g f
ID
Ptot = 2.00W
-3.0
-2.5
3.5
c
d
-2.0
3.0
2.5
-1.5
c
2.0
b
-1.0
1.5
a
1.0
b
0.5
-0.5
a
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
5.0
VDS
-5.0
VDS
Typ. drain-source-on-resistance (N-Ch.)
Typ. drain-source-on-resistance (P-Ch.)
RDS(on) = f (ID)
RDS(on) = f (ID )
parameter: VGS
parameter: VGS
BSO 615 C
BSO 615 C
1.0
0.36
c
Ω
d
Ω
e
b
c
d
0.8
RDS(on)
0.28
RDS(on)
a
0.24
0.7
0.6
0.20
0.5
0.16
0.4
0.12
0.08
0.04
g
0.00
0.0
d
3.2
e
f
3.5 3.7
1.0
2.0
0.1
g
4.0
3.0
4.0
5.0
A
f
g
0.2
VGS [V] =
c
3.0
e
0.3
f
VGS [V] =
0.0
0.0
6.5
ID
a
b
c
d
e
f
-2.5 -2.7 -3.0 -3.2 -3.5 -3.7
-0.4 -0.8
g
-4.0
-1.2 -1.6 -2.0
-2.4 -2.8 °C -3.4
Tj
Page 7
1999-10-28
Preliminary data
BSO 615 C
Typ. transfer characteristics (N-Ch.)
Typ. transfer characteristics (P-Ch.)
parameter: tp = 80 µs
I D = f (VGS), V DS ≥ 2 x I D x R DS(on)max
parameter: tp = 80 µs
ID = f (VGS ), VDS ≥ 2 x ID x RDS(on)max
-5.0
7.0
A
A
6.0
-4.0
5.5
-3.5
4.5
ID
ID
5.0
-3.0
4.0
-2.5
3.5
3.0
-2.0
2.5
2.0
-1.5
1.5
-1.0
1.0
-0.5
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS 5.0
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0VGS -5.0
V
V
Typ. forward transconductance (N-Ch.)
Typ. forward transconductance (P-Ch.)
gfs = f(ID); T j = 25 °C
gfs = f(ID); Tj = 25 °C
parameter: g fs
parameter: gfs
10.0
4.0
S
S
8.0
3.0
gfs
gfs
7.0
6.0
5.0
2.5
2.0
4.0
1.5
3.0
1.0
2.0
0.5
1.0
0.0
0
1
2
3
4
5
6
7
8
0.0
0.0
A 10
ID
-1.0
-2.0
-3.0
-4.0
-6.0
A
ID
Page 8
1999-10-28
Preliminary data
BSO 615 C
Drain-source on-resistance (N-Ch.)
Drain-source on-resistance (P-Ch.)
RDS(on) = f (Tj)
RDS(on) = f (Tj)
parameter : I D = 3.1 A , VGS = 10 V
parameter : ID = -2 A , VGS = -10 V
BSO 615 C
BSO 615 C
0.80
0.30
Ω
Ω
RDS(on)
RDS(on)
0.24
0.22
0.20
0.18
0.16
0.50
0.40
98%
0.14
0.60
0.12
98%
0.30
0.10
typ
typ
0.08
0.20
0.06
0.04
0.10
0.02
0.00
-60
-20
20
60
100
°C
0.00
-60
180
-20
20
60
°C
100
Tj
Tj
Gate threshold voltage (P-Ch.)
VGS(th) = f (T j)
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 20 µA
parameter: VGS = VDS , ID = -450 µA
3.0
-3.0
V
V
2.5
-2.5
2.2
-2.2
V GS(th)
V GS(th)
Gate threshold voltage (N-Ch.)
98%
2.0
1.8
98%
-2.0
-1.8
typ
typ
1.5
-1.5
1.2
-1.2
2%
1.0
-1.0
0.8
-0.8
0.5
-0.5
0.2
-0.2
0.0
-60
180
-20
20
60
100
0.0
-60
160
°C
Tj
Page 9
2%
-20
20
60
100
160
°C
Tj
1999-10-28
Preliminary data
BSO 615 C
Typ. capacitances (N-Ch.)
Typ. capacitances (P-Ch.)
C = f(VDS)
C = f(VDS )
parameter: VGS=0 V, f=1 MHz
parameter: VGS =0 V, f=1 MHz
10 3
10 3
pF
C
C
Ciss
pF
Ciss
10 2
10 2
Coss
Coss
Crss
Crss
10 1
0
5
10
15
20
25
VDS
10 1
0
35
-5
-10
-15
-20
-25
V
VDS
-35
V
Forward characteristics of reverse diode
Forward characteristics of reverse diode
I F = f (VSD), (N-Ch.)
IF = f (VSD ), (P-Ch.)
parameter: Tj , tp = 80 µs
parameter: Tj , tp = 80 µs
10
1
BSO 615 C
10 1
BSO 615 C
A
A
IF
10 0
IF
10 0
10 -1
10 -2
0.0
10 -1
0.4
0.8
Tj = 25 °C typ
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 25 °C (98%)
Tj = 150 °C (98%)
Tj = 150 °C (98%)
1.2
1.6
2.0
2.4 V
10 -2
0.0
3.0
VSD
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
Page 10
1999-10-28
Preliminary data
BSO 615 C
Avalanche Energy EAS = f (Tj) (N-Ch.)
Avalanche Energy EAS = f (Tj )
parameter: ID = 3.1 A , V DD = 25 V
RGS = 25 Ω
parameter: ID = -2 A , VDD = -25 V
RGS = 25 Ω
50
80
mJ
mJ
40
60
E AS
E AS
35
30
25
50
40
20
30
15
20
10
10
5
0
25
45
65
85
105
125
0
25
165
°C
45
65
85
105
125
Tj
Tj
Typ. gate charge (N-Ch.)
Typ. gate charge (P-Ch.)
VGS = f (QGate)
parameter: ID = 3.1 A
VGS = f (QGate)
parameter: ID = -2 A
BSO 615 C
BSO 615 C
16
-16
V
V
-12
VGS
12
VGS
165
°C
10
8
-10
-8
0,2 VDS max
6
0,8 VDS max
4
-4
2
-2
0
0
2
4
6
8
10
12
14
16 nC
0,2 VDS max
-6
0
0
20
QGate
2
4
6
8
0,8 VDS max
10
12
14
16 nC
20
QGate
Page 11
1999-10-28
Preliminary data
BSO 615 C
Drain-source breakdown voltage
Drain-source breakdown voltage
V(BR)DSS = f (Tj), (N-Ch.)
V(BR)DSS = f (Tj ), (P-Ch.)
BSO 615 C
BSO 615 C
72
-72
V
68
V(BR)DSS
V(BR)DSS
V
66
-68
-66
64
-64
62
-62
60
-60
58
-58
56
-56
54
-60
-20
20
60
100
°C
-54
-60
180
Tj
-20
20
60
100
°C
180
Tj
Page 12
1999-10-28
Preliminary data
BSO 615 C
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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Page 13
1999-10-28
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