Preliminary Data BSO 615N SIPMOS Small-Signal-Transistor Features Product Summary • Dual N Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 V RDS(on) 0.15 Ω ID 2.6 A • Logic Level • dv/dt rated Type Package Ordering Code BSO 615N SO 8 Q67041-S2843 Maximum Ratings, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current, one channel active ID 2.6 Pulsed drain current, one channel active IDpulse 10.4 Value Unit A T A = 25 ˚C Avalanche energy, single pulse EAS 60 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 2.6 A EAR 0.18 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, one channel active Ptot 2 W ˚C I D = 2.6 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 2.6 A, V DS = 40 V, di/dt = 200 A/µs, T jmax = 150 ˚C T A = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSO 615N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 35 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 100 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current µA IDSS VDS = 60 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 60 V, V GS = 0 V, T j = 150 ˚C - 10 100 - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 2.6 A - 0.12 0.15 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 615N Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 2.4 5.5 - S Ciss - 300 380 pF Coss - 90 120 Crss - 50 65 td(on) - 12 20 tr - 15 25 td(off) - 20 30 tf - 15 25 Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Ω Rise time VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Ω Turn-off delay time VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Ω Fall time VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Ω Data Sheet 3 05.99 BSO 615N Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. QG(th) - 0.4 0.6 Gate charge at Vgs=5V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Qg(5) - 7 10 Gate charge total Qg - 14 20 V(plateau) - 3.6 - V IS - - 2.6 A I SM - - 10.4 VSD - 0.95 1.2 V t rr - 50 75 ns Q rr - 0.1 0.15 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, VGS = 1 V nC VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 2.6 A Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 615N Power Dissipation Drain current Ptot = f (TA), VGS = 4,5 V ID = f (TA ), VGS = 4,5 V BSO 615N BSO 615N 2.8 2.4 A W 2.4 2.0 2.2 2.0 1.6 1.8 ID Ptot 1.8 1.4 1.6 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 ˚C 0.0 0 160 20 40 60 80 100 120 ˚C TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f(tp ) parameter : D = 0 , TA = 25 ˚C, VGS = 4,5 V parameter : D = tp /T 10 160 TA 2 BSO 615N 10 2 BSO 615N A K/W /ID tp = 5.7µs S = R ( DS VD 10 µs ) on Z thJA 10 1 ID 100 µs 10 1 1 ms 10 0 D = 0.50 10 ms 0.20 10 0 0.10 single pulse 10 -1 0.05 0.02 0.01 DC 10 -2 -1 10 10 0 10 1 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Data Sheet s 10 4 tp 5 05.99 BSO 615N Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 2.6 A, VGS = 4.5 V BSO 615N 6.5 BSO 615N 0.36 Ptot = 2W A Ω g ihjf e lk d VGS [V] a 2.0 5.0 ID 4.5 c 4.0 3.5 3.0 2.5 2.0 1.5 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 b l 10.0 0.28 RDS(on) 5.5 0.24 0.20 98% 0.16 typ 0.12 0.08 1.0 0.04 0.5 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 -60 5.0 VDS -20 20 60 100 ˚C 180 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 pF C Ciss 10 2 Coss Crss 10 1 0 5 10 15 20 25 30 V 40 VDS Data Sheet 6 05.99 BSO 615N Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA 3.2 15 A V 12 2.4 VGS(th) 11 ID 10 9 8 2.0 1.6 7 6 1.2 max 0.8 typ 0.4 min 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V 0.0 -60 10 VGS -20 20 60 100 V 160 Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 615N A IF 10 1 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 615N Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω VGS = f (Q Gate) parameter: ID puls = 2.6 A BSO 615N 65 16 mJ V 55 50 12 VGS EAS 45 40 10 35 8 30 0,2 VDS max 25 0,8 VDS max 6 20 4 15 10 2 5 0 20 40 60 80 100 ˚C 120 Drain-source breakdown voltage 0 0 160 Tj 4 8 12 16 nC 24 Q Gate V(BR)DSS = f (Tj) BSO 615N 72 V(BR)DSS V 68 66 64 62 60 58 56 54 -60 -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99