BSP295 Rev 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary · N-Channel · Enhancement mode · dv/dt rated VDS 60 V RDS(on) 0.3 W ID 1.8 A • Pb-free lead plating; RoHS compliant PG-SOT-223 4 3 2 1 Type Package Tape and Reel Information Marking BSP295 PG-SOT-223 L6327: 1000 pcs/reel BSP295 VPS05163 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 1.8 TA=70°C 1.44 Pulsed drain current Unit I D puls 7.2 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1 Ptot 1.8 W -55... +150 °C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2007-02-07 BSP295 Rev 1.3 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 0.8 1.1 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250µA Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - 8 50 - 1 10 Gate-source leakage current I GSS VGS=20V, VDS=0 Drain-source on-state resistance nA W RDS(on) VGS=10V, ID=1.8A - 0.22 0.3 VGS=4.5V, ID=1.8A - 0.39 0.5 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2007-02-07 BSP295 Rev 1.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.8 1.7 - S pF Dynamic Characteristics Transconductance gfs VDS³2*ID*RDS(on)max, ID=1.44A Input capacitance Ciss VGS=0, VDS=25V, - 295 368 Output capacitance Coss f=1MHz - 95 118 Reverse transfer capacitance Crss - 45 67 Turn-on delay time td(on) VDD=15V, VGS=4.5V, - 5.4 8.1 Rise time tr ID=1.44 A, RG=15W - 9.9 15 Turn-off delay time td(off) - 27 41 Fall time tf - 19 28 - 0.9 1.1 - 5.6 8.4 - 14 17 V(plateau) VDD =24V, ID = 1.8 A - 3.1 3.8 V IS - - 1.8 A - - 7.2 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =24V, ID =1.8A VDD =24V, ID =1.8A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.84 1.3 V Reverse recovery time trr VR=25V, I F=lS , - 36 45 ns Reverse recovery charge Qrr diF/dt=100A/µs - 38 48 nC Page 3 2007-02-07 BSP295 Rev 1.3 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) BSP295 1.9 1.9 W A 1.6 1.6 1.4 1.4 1.2 1.2 ID P tot parameter: VGS ³ 10 V 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 20 40 60 80 100 °C 120 0 0 160 BSP295 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSP295 10 10 2 tp = 150.0µs /ID o S( BSP295 K/W S = A 160 °C TA VD n) RD 10 1 0 ID 10 Z thJA 1 ms 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 10 -1 0.05 single pulse 0.02 DC 10 -2 0 10 10 1 0.01 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp VDS Page 4 2007-02-07 BSP295 Rev 1.3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 3.6 1.8 A 5V 6V 7V 3 10V W 4.2V R DS(on) 2.7 3.8V ID 2.4 2.1 3V 2.4V 2.8V 3.4V 3.8V4.2V 5V 6V 1.4 7V 10V 1.2 1 1.8 3.4V 0.8 1.5 3V 0.6 1.2 0.9 2.8V 0.4 2.4V 0.2 0.6 0.3 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V VDS A S gfs 2.5 1.5 3.6 A 1.5 1 1 0.5 0.5 1.5 2.4 parameter: Tj = 25 °C 2.5 1 1.8 gfs = f(ID) parameter: Tj = 25 °C 0.5 1.2 8 Typ. forward transconductance ID = f ( VGS ); VDS³ 2 x ID x RDS(on)max 0 0 0.6 ID 7 Typ. transfer characteristics ID 0 0 5 2 2.5 3 V VGS 0 0 4 0.6 1.2 1.8 2.4 3.6 V ID Page 5 2007-02-07 BSP295 Rev 1.3 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 1.8 A, VGS = 10 V parameter: VGS = VDS ; ID = 1 mA BSP295 W 2.2 0.75 V 98% 1.8 V GS(th) R DS(on) 0.6 0.55 0.5 0.45 1.6 typ. 1.4 1.2 0.4 0.35 98% 1 2% 0.3 0.8 0.25 typ 0.6 0.2 0.15 0.4 0.1 0.2 0.05 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 BSP295 A Ciss pF 10 0 C IF Coss 10 2 Crss 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2007-02-07 BSP295 Rev 1.3 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj) VGS = f (QG ); parameter: VDS , par.: ID = 3.9 A, VDD = 25 V, RGS = 25 W ID = 1.8 A pulsed, Tj = 25 °C 60 16 BSP295 V mJ V GS E AS 12 40 30 10 8 6 20 0.2 VDS max 4 0.5 VDS max 10 0.8 VDS max 2 0 20 40 60 80 100 120 °C 160 0 0 4 8 12 16 nC 24 QG Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP295 60 V (BR)DSS V 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 180 Tj Page 7 2007-02-07 BSP295 Rev 1.3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2007-02-07