BSR40 BSR42 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ✪ ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPES – BSR40 – BSR30 BSR42 – BSR32 PARTMARKING DETAIL – C BSR40 – AR1 BSR42 – AR3 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSR40 BSR42 UNIT Collector-Base Voltage VCBO 70 90 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A 100 mA Base Current IB Power Dissipation at Tamb =25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base BSR40 Breakdown Voltage BSR42 V(BR)CBO 70 90 V V IC=100µA IC=100µA Collector-Emitter BSR40 Breakdown Voltage BSR42 V(BR)CEO 60 80 V V IC=10mA IC=10mA Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=10µA Collector Cut-Off Current ICBO 100 50 nA µA VCB=60V VCB=60V, Tamb=125°C Collector-Emitter Saturation Voltage VCE(sat) 0.25 0.5 V V IC =150mA, IB=15mA IC =500mA, IB=50mA Base-Emitter Saturation Voltage VBE(sat) 1.0 1.2 V V IC =150mA, IB=15mA IC =500mA, IB=50mA Static Forward Current Transfer Ratio hFE 10 40 30 MAX. IC =100µA, VCE=5V IC =100mA, VCE=5V IC =500mA, VCE=5V 120 Collector Capacitance Cc 12 pF Emitter Capacitence Ce 90 pF VEB =0.5V, f=1MHz Transition Frequency fT MHz IC=50mA, VCE=10V f =35MHz VCC =20V, IC =100mA IB1 =-IB2 =-5mA 100 Turn-On Time Ton 250 ns Turn-Off Time Toff 1000 ns *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMT493 datasheet. 3 - 67 VCB =10V, f =1MHz