Type BSS127 SIPMOS® Small-Signal-Transistor Product Summary Features • n-channel • enhancement mode V DS 600 V R DS(on),max 500 Ω 0.021 A ID • Logic level (4.5V rated) • dv /dt rated • Qualified according to AEC Q101 PG-SOT-23 • 100%lead-free; RoHS compliant Type Package Pb-free Tape and Reel Information Marking BSS127 PG-SOT-23 Yes L6327: 3000PCS/reel Sis Maximum ratings, at T j=25 °C, unless otherwise specified Value Unit T A=25 °C 0.021 A T A=70 °C 0.017 I D,pulse T A=25 °C 0.09 Reverse diode dv /dt dv /dt I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Parameter Symbol Conditions Continuous drain current ID Pulsed drain current ±20 ESD class (JESD22-A114-HBM) kV/µs V 0 (<250V) Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.47 6 0.50 W -55 ... 150 °C 55/150/56 page 1 2010-07-29 BSS127 Parameter Values Symbol Conditions Unit min. typ. max. - - 250 600 - - 1.4 2.0 2.6 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Gate threshold voltage V GS(th) V DS=VGS, I D=8 µA Drain-source leakage current I D (off) V DS=600 V, V GS=0 V, T j=25 °C - - 0.1 V DS=600 V, V GS=0 V, T j=150 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.016 A - 330 600 Ω V GS=10 V, I D=0.016 A - 310 500 |V DS|>2|I D|R DS(on)max, I D=0.01 A 0.007 0.015 - Transconductance Rev. 1.47 g fs page 2 S 2010-07-29 BSS127 Parameter Values Symbol Conditions Unit min. typ. max. - 21 28 - 2.4 3 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 1.0 1.5 Turn-on delay time t d(on) - 6.1 19.0 Rise time tr - 9.7 14.5 Turn-off delay time t d(off) Fall time V GS=0 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=10 V, I D=0.01 A, R G=6 Ω pF ns - 14 21 tf - 115 170 Gate to source charge Q gs - 0.07 0.10 Gate to drain charge Q gd - 0.31 0.5 Gate charge total Qg - 0.65 1.0 Gate plateau voltage V plateau - 3.56 - V - - 0.016 A - - 0.09 - 0.82 1.2 V - 160 240 ns - 13.2 19.8 nC Gate Charge Characteristics V DD=300 V, I D=0.01 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.47 T A=25 °C V GS=0 V, I F=0.016 A, T j=25 °C V R=300 V, I F=0.016 A, di F/dt =100 A/µs page 3 2010-07-29 BSS127 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.6 0.03 0.5 0.025 0.4 0.02 I D [A] P tot [W] 1 Power dissipation 0.015 0.3 0.2 0.01 0.1 0.005 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10-1 103 10 µs 102 1 ms 10 ms -2 0.2 0.1 Z thJA [K/W] 10 0.5 100 µs limited by on-state resistance I D [A] 100 ms DC 0.05 101 0.02 0.01 single pulse 10-3 100 10-1 10-5 10-4 100 Rev. 1.47 101 V DS [V] 102 103 page 4 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] 2010-07-29 BSS127 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.03 1000 2.6 V 10 V 4V 3.2 V 3.6 V 3V 0.025 5V 3.8 V 800 4V 0.02 I D [A] R DS(on) [Ω] 3.8 V 0.015 3.6 V 600 400 5V 0.01 10 V 3.2 V 200 0.005 3V 2.6 V 0 0 0 2 4 6 8 10 0 0.005 V DS [V] 0.01 0.015 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.025 0.025 0.02 0.02 0.015 0.015 I D [A] g fs [S] 0.025 0.01 0.01 0.005 0.005 0 0 0 1 2 3 4 0.000 V GS [V] Rev. 1.47 0.02 I D [A] 0.005 0.010 0.015 0.020 I D [A] page 5 2010-07-29 BSS127 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.016 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=8 µA parameter: I D 3.5 1000 900 3 800 600 98 % V GS(th) [V] R DS(on) [Ω] max 2.5 700 500 400 2 typ 1.5 min typ 300 1 200 0.5 100 0 0 -60 -20 20 60 100 140 -60 180 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 10-1 102 150 °C, 98% 25 °C, 98% Ciss 150 °C I F [A] C [pF] 10 25 °C 1 Coss 10-2 Crss 100 10-3 10-1 0 5 10 15 20 25 Rev. 1.47 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V SD [V] V DS [V] page 6 2010-07-29 BSS127 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.01 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 10 700 9 680 8 660 7 640 300 V 120 V 480 V V BR(DSS) [V] V GS [V] 6 5 4 620 600 580 3 560 2 540 1 520 500 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Q gate [nC] -60 -20 20 60 100 140 180 T j [°C] 15 Gate charge waveforms V GS Qg V g s(th) Q g(th) Q sw Q gs Rev. 1.47 Q g ate Q gd page 7 2010-07-29 BSS127 SOT-23 Package Outline: Footprint: Rev. 1.47 Packaging: page 8 2010-07-29 BSS127 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.47 page 9 2010-07-29