ETC BSS65R Sot23 pnp silicon planar high speed transistor Datasheet

SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995
✪
PARTMARKING DETAIL —
BSS65 - L1
BSS65R - L5
BSS65
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-12
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-4
V
Peak Pulse Current
ICM
-200
mA
Continuous Collector Current
IC
-100
mA
Base Current
IC
-50
mA
Power Dissipation at Tamb=25°C
PTOT
330
mW
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
BreakdownVoltages
V(BR)CEO
-12
V
IC=-10mA
V(BR)CBO
-12
V
IC=-10µ A *
V(BR)EBO
-4
Cut-Off Currents
TYP.
MAX.
V
IE=-10µ A
ICBO
-100
nA
VCB=-6V, IE=0
IEBO
-100
nA
VEB=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.25
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
-0.82
-0.98
-1.20
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Static Forward Current hFE
Transfer Ratio
30
40
150
Transition Frequency
fT
400
Collector-Base
Capacitance
Cobo
Emitter Base Capacitance
Cebo
Switching Times
Turn-On Time
Turn-Off Time
ton
toff
23
34
IC=-10mA, VCE=-0.3V
IC=-30mA, VCE=-0.5V
MHz
IC=-30mA, VCE=-10V,
f=100MHz
6
pF
VCB=-5V, IE=0,
f=1MHz
6
pF
VEB=-0.5V, IC=0, f=1MHz
60
90
nS
nS
IC=-30mA
IB1 = -IB2= -1.5mA
VCC=-10V
PAGE NUMBER
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