BSS 89 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 89 240 V 0.3 A 6Ω TO-92 SS89 Type BSS 89 BSS 89 BSS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 S Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 240 Unit V DGR RGS = 20 kΩ 240 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 25 ˚C 0.3 DC drain current, pulsed IDpuls TA = 25 ˚C 1.2 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 1 1 05.99 BSS 89 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 DIN humidity category, DIN 40 040 Unit ˚C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 240 - - 0.8 1.5 2 V GS(th) VGS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS VDS = 240 V, VGS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 240 V, VGS = 0 V, Tj = 125 ˚C - 10 100 VDS = 60 V, VGS = 0 V, Tj = 25 ˚C - - 0.2 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance nA IGSS - 10 100 Ω RDS(on) VGS = 10 V, ID = 0.3 A - 4.5 6 VGS = 4.5 V, ID = 0.3 A - 5.3 10 Data Sheet 2 05.99 BSS 89 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.3 A Input capacitance 0.14 - 115 155 - 15 25 - 8 12 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.33 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Rise time - 5 8 - 10 15 - 30 40 - 20 27 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Data Sheet 3 05.99 BSS 89 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.3 - - 1.2 V V SD VGS = 0 V, IF = 0.6 A Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 0.9 1.4 05.99 BSS 89 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 1.2 0.32 W A 1.0 Ptot ID 0.9 0.24 0.8 0.20 0.7 0.6 0.16 0.5 0.12 0.4 0.3 0.08 0.2 0.04 0.1 0.0 0.00 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TA ˚C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 285 V 275 V(BR)DSS270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 5 05.99 BSS 89 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.70 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 19 Ptot = 1W A lkj i h g Ω f 0.60 ID e 0.50 0.45 0.40 0.35 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 0.25 j 8.0 0.20 k 9.0 l 10.0 d 0.30 c b c 16 VGS [V] a 2.0 0.55 a RDS (on) 14 12 10 d 8 e 6 0.15 f hg ji 4 0.10 b 0.05 0.00 2 a 0 2 4 6 VGS [V] = a 3.0 2.0 2.5 b 3.5 c 4.0 d 4.5 e f 5.0 6.0 g 7.0 h i j 8.0 9.0 10.0 0 8 V 11 0.00 0.10 0.20 0.30 0.40 VDS A 0.60 ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 1.2 0.55 S A ID gfs 0.45 0.40 0.8 0.35 0.30 0.6 0.25 0.20 0.4 0.15 0.10 0.2 0.05 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 VGS Data Sheet 0.10 0.20 0.30 0.40 A 0.55 ID 6 05.99 BSS 89 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.3 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 15 4.6 Ω V 13 4.0 RDS (on) 12 VGS(th) 3.6 11 3.2 10 2.8 9 8 2.4 98% 98% 7 2.0 6 typ 5 1.6 4 1.2 typ 2% 3 0.8 2 0.4 1 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 1 pF A IF C Ciss 10 2 10 0 Coss 10 1 10 -1 Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -2 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99