PHILIPS BT151U-650C Thyristor Datasheet

Philips Semiconductors
Product specification
Thyristors
BT151U series C
GENERAL DESCRIPTION
Passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional blocking voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial
and domestic lighting, heating and
static switching.
PINNING - SOT533, (I-PAK)
PIN
NUMBER
DESCRIPTION
1
cathode
2
anode
3
gate
tab
anode
QUICK REFERENCE DATA
SYMBOL
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
PARAMETER
BT151URepetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state
current
PIN CONFIGURATION
MAX.
MAX.
MAX.
UNIT
500C
500
650C
650
800C
800
V
7.5
12
100
7.5
12
100
7.5
12
100
A
A
A
SYMBOL
a
1
2
Top view
k
g
3
MBK915
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VDRM, VRRM Repetitive peak off-state
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; Tmb ≤ 104 ˚C
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Junction temperature
MIN.
MAX.
UNIT
-
-500C -650C -800C
5001
6501
800
V
-
7.5
12
A
A
-
100
110
50
50
A
A
A2s
A/µs
-40
-
2
5
5
0.5
150
125
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2004
1
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151U series C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
junction to mounting base
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
1.3
-
70
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IGT
IL
IH
VT
VGT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
ID, IR
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
VD = 12 V; IGT = 0.1 A
IT = 23 A
VD = 12 V; IT = 0.1 A
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
0.25
-
2
10
7
1.44
0.6
0.4
0.1
15
40
20
1.75
1.5
0.5
mA
mA
mA
V
V
V
mA
MIN.
TYP.
MAX.
UNIT
50
200
-
130
1000
2
-
V/µs
V/µs
µs
-
70
-
µs
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform
Gate open circuit
RGK = 100 Ω
ITM = 40 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
VD = 67% VDRM(max); Tj = 125 ˚C;
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
tgt
tq
April 2004
Gate controlled turn-on
time
Circuit commutated
turn-off time
2
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151U series C
105.5
15
conduction
angle
Ptot
(W)
10
form
factor
(α)
(a)
30
30˚
60˚
90˚
120˚
180˚
4
4.0
2.8
2.2
1.9
1.57
a = 1.57
120
Tmb(max)
(°C)
1.9
2.2
ITSM
IT
100
112
2.8
ITSM / A
time
T
Tj initial = 25 C max
80
4
60
118.5
5
40
α
20
0
0
2
4
6
8
125
0
IT(AV) (A)
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000
1
10
100
Number of half cycles at 50Hz
1000
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
ITSM / A
25
IT(RMS) / A
20
dI T /dt limit
15
100
10
I TSM
IT
T
time
5
Tj initial = 25 C max
10
10us
100us
10ms
1ms
0
0.01
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
0.1
1
surge duration / s
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 100 ˚C.
15
IT(RMS)
1.6
VGT(Tj)
VGT(25 C)
104 ˚C
(A)
1.4
10
1.2
1
5
0.8
0.6
0
-50
0
50
100
Tmb (°C)
0.4
-50
150
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
April 2004
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
3
BT151U series C
IGT(Tj)
IGT(25 C)
30
Tj = 125 °C
Tj = 25 °C
IT
(A)
2.5
typ
20
2
max
1.5
10
1
0.5
Vo = 1.06 V
Rs = 0.0304 ohms
0
-50
0
50
Tj / C
100
0
150
IL(Tj)
IL(25 C)
0.5
1
1.5
2
VT (V)
Fig.10. Typical and maximum on-state characteristic.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
0
10
Zth(j-mb)
BT145
(K/W)
2.5
1
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
1ms
10ms
0.1s
1s
10s
tp (s)
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
IH(Tj)
IH(25 C)
10000
dVD/dt (V/us)
2.5
1000
2
RGK = 100 Ohms
1.5
100
1
gate open circuit
0.5
0
-50
0
50
Tj / C
100
10
150
50
100
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
April 2004
0
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
4
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151U series C
MECHANICAL DATA
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
E
A
A1
E1
D1
mounting
base
D
Q
L
1
2
e1
3
b
c
w M
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
mm
2.38
2.22
0.89
0.71
OUTLINE
VERSION
SOT533
b
c
0.89 0.56
0.71 0.46
D
D1
E
E1
7.28
6.94
1.06
0.96
6.73
6.47
5.36
5.26
e
L
Q
9.8
9.4
1.00
1.10
e1
4.57 2.285
REFERENCES
IEC
JEDEC
EIAJ
TO-251
EUROPEAN
PROJECTION
ISSUE DATE
99-02-18
Fig.13. SOT533, (I-PAK). Pin 2 connected to mounting base.
April 2004
5
Rev 1.000
Philips Semiconductors
Product specification
Thyristors
BT151U series C
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
STATUS3
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
April 2004
6
Rev 1.000
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