PHILIPS BTA204S-800F Three quadrant triacs guaranteed commutation Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BTA204S series D, E and F
BTA204M series D, E and F
Three quadrant triacs guaranteed
commutation
Product specification
December 1998
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other
highly inductive loads. These devices
balance
the
requirements
of
commutation performance and gate
sensitivity. The "sensitive gate" E
series and "logic level" D series are
intended for interfacing with low power
drivers, including micro controllers.
PINNING - SOT428
BTA204S series D, E and F
BTA204M series D, E and F
QUICK REFERENCE DATA
SYMBOL
VDRM
IT(RMS)
ITSM
PARAMETER
MAX. MAX.
BTA204S (or BTA204M)- 500D
BTA204S (or BTA204M)- 500E
BTA204S (or BTA204M)- 500F
Repetitive peak
500
off-state voltages
RMS on-state current
4
Non-repetitive peak on-state 25
current
PIN CONFIGURATION
PIN
Standard Alternative
NUMBER
S
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
MAX. UNIT
600D
600E
600F
600
800E
800F
800
V
4
25
4
25
A
A
SYMBOL
tab
T2
T1
2
1
G
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
2
It
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
2
I t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Tmb ≤ 107 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
4
A
-
25
27
3.1
100
A
A
A2s
A/µs
-
2
5
5
0.5
A
V
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
junction to ambient
-
75
3.0
3.7
-
K/W
K/W
K/W
Rth j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
BTA204S (or BTA204M)2
IGT
Gate trigger current
IL
Latching current
IH
VT
VGT
ID
MAX.
UNIT
...D
...E
...F
-
-
5
5
5
10
10
10
25
25
25
mA
mA
mA
Holding current
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GVD = 12 V; IGT = 0.1 A
-
-
6
9
6
6
12
18
12
12
20
30
20
20
mA
mA
mA
mA
On-state voltage
Gate trigger voltage
IT = 5 A
VD = 12 V; IT = 0.1 A
-
1.4
0.7
1.7
1.5
V
V
0.25
0.4
-
V
-
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
Off-state leakage
current
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
CONDITIONS
BTA204S (or BTA204M)-
dIcom/dt
dIcom/dt
tgt
...D
...E
...F
VDM = 67% VDRM(max);
20
Tj = 125 ˚C; exponential
waveform; gate open circuit
Critical rate of change VDM = 400 V; Tj = 125 ˚C;
1.0
of commutating current IT(RMS) = 4 A;
dVcom/dt = 20V/µs; gate
open circuit
Critical rate of change VDM = 400 V; Tj = 125 ˚C;
5.0
of commutating current IT(RMS) = 4 A;
dVcom/dt = 0.1V/µs; gate
open circuit
Gate controlled turn-on ITM = 12 A; VD = VDRM(max);
time
IG = 0.1 A; dIG/dt = 5 A/µs
30
50
-
-
V/µs
2.0
2.5
-
-
A/ms
-
-
-
-
A/ms
-
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
8
BT136
Ptot / W
BTA204S series D, E and F
BTA204M series D, E and F
Tmb(max) / C
5
101
IT(RMS) / A
BT136
104
7
6
= 180
1
107 C
4
107
120
5
110
90
60
4
3
113
30
3
116
2
119
1
122
2
1
0
0
1
2
3
IT(RMS) / A
125
5
4
0
-50
BT136
ITSM / A
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
0
12
BT136
IT(RMS) / A
ITSM
IT
10
T
time
8
Tj initial = 25 C max
100
6
dIT /dt limit
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
30
ITSM / A
BT136
T
Tj initial = 25 C max
1.2
1
10
0.8
5
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
December 1998
BT136
1.4
time
15
0
VGT(Tj)
VGT(25 C)
I TSM
IT
20
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
1.6
25
0.1
1
surge duration / s
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
3
IGT(Tj)
IGT(25 C)
BTA204S series D, E and F
BTA204M series D, E and F
12
BTA204
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- G-
2.5
typ
10
max
Vo = 1.27 V
Rs = 0.091 ohms
8
2
1.5
6
1
4
0.5
2
0
-50
0
50
Tj / C
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
BT136
IT / A
IL(Tj)
IL(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
10
TRIAC
BT136
Zth j-mb (K/W)
unidirectional
2.5
bidirectional
1
2
1.5
0.1
1
P
D
tp
0.5
t
0
-50
0
50
Tj / C
100
0.01
10us
150
3
1ms
10ms
0.1s
1s
10s
tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
0.1ms
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
December 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
MECHANICAL DATA
Dimensions in mm
seating plane
Net Mass: 1.1 g
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.12. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.13. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
December 1998
6
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
7
Rev 1.000
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SCA 68
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/1160/03/pp8
Date of release: December
1998
Document order number:
9397 750 06619
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