STMicroelectronics BTB10C Standard triac Datasheet

S
BTA10 B/C
BTB10 B/C
STANDARD TRIACS
..
.
FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 5 V/µs
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
A2
The BTA/BTB10 B/C triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistive load.
G
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM
VRRM
March 1995
Parameter
Value
Unit
10
A
tp = 8.3 ms
105
A
tp = 10 ms
100
I2t value
tp = 10 ms
50
A2s
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
10
A/µs
Non
Repetitive
50
RMS on-state current
(360° conduction angle)
BTA
Tc = 90 °C
BTB
Tc = 95 °C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
260
°C
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
Repetitive peak off-state voltage
Tj = 125 °C
BTA / BTB10-... B/C
Unit
400
600
700
800
400
600
700
800
V
1/5
S
BTA10 B/C / BTB10 B/C
THERMAL RESISTANCES
Symbol
Rth (j-a)
Parameter
Value
Unit
60
°C/W
BTA
3.9
°C/W
BTB
3.1
BTA
2.9
BTB
2.3
Junction to ambient
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20 µs)
IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
IGT
Test Conditions
VD=12V
(DC)
(DC)
RL =33Ω
RL =33Ω
Quadrant
Tj=25°C
Suffix
B
C
I-II-III
MAX
50
25
IV
MAX
100
50
mA
Tj=25°C
I-II-III-IV
MAX
1.5
V
VGT
VD=12V
VGD
VD=VDRM R L=3.3kΩ
Tj=110°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
Tj=25°C
I-II-III-IV
TYP
2
µs
IL
IG=1.2 IGT
Tj=25°C
I-III-IV
TYP
II
40
20
70
35
50
25
mA
IH *
IT= 500mA gate open
Tj=25°C
MAX
VTM *
ITM= 14A tp= 380µs
Tj=25°C
MAX
1.5
V
IDRM
IRRM
VDRM
VRRM
Tj=25°C
MAX
0.01
mA
Tj=110°C
MAX
0.5
Linear slope up to VD =67%VDRM
gate open
Tj=110°C
MIN
250
100
V/µs
(dI/dt)c = 4.4A/ms
Tj=110°C
MIN
10
5
V/µs
dV/dt *
(dV/dt)c *
Rated
Rated
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
Unit
mA
S
BTA10 B/C / BTB10 B/C
ORDERING INFORMATION
Package
IT(RMS)
VDRM / VRRM
A
V
B
C
10
400
X
X
600
X
X
700
X
X
800
X
X
400
X
X
600
X
X
700
X
X
800
X
X
BTA
(Insulated)
BTB
(Uninsulated)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Sensitivity Specification
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Tcase (o C)
P (W)
P(W)
14
14
180 O
12
= 180
o
12
o
10
10
= 120
8
= 90
= 60
6
Rth = 0 o C/W
2.5 o C/W
5 o C/W
7.5 o C/W
o
-90
-95
-100
8
o
-85
-105
6
-110
4
= 30
o
4
2
0
I T(RMS) (A)
0
1
2
3
4
5
6
7
8
9
10
Tcase (o C)
14
Rth
12
= 0 o C/W
o
2.5 C/W
o
5 C/W
7.5 o C/W
-120
o
Tamb ( C)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
P (W)
-115
2
0
0
-95
10
8
-105
6
-110
4
-115
60
80
100
120
-125
140
I T(RMS) (A)
12
-100
40
Fig.4 : RMS on-state current versus case temperature.
-90
10
20
BTB
BTA
8
6
2
-120
= 180
4
2
o
Tcase( C)
o
Tamb ( C)
0
0
20
40
o
60
80
100
120
-125
140
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
3/5
S
BTA10 B/C / BTB10 B/C
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.9 : On-state characteristics (maximum values).
4/5
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
S
BTA10 B/C / BTB10 B/C
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
H
A
J
G
I
D
B
F
O
P
L
C
M
= N =
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.20
10.50
0.401
0.413
14.23
15.87
0.560
0.625
12.70
14.70
0.500
0.579
5.85
6.85
0.230
0.270
4.50
0.178
2.54
3.00
0.100
0.119
4.48
4.82
0.176
0.190
3.55
4.00
0.140
0.158
1.15
1.39
0.045
0.055
0.35
0.65
0.013
0.026
2.10
2.70
0.082
0.107
4.58
5.58
0.18
0.22
0.80
1.20
0.031
0.048
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
Similar pages