STMicroelectronics BTB24-800B Standard triac Datasheet

BTB24 B
®
STANDARD TRIACS
..
FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 10V/µs
DESCRIPTION
A1
A2
The BTB24 B triac family are high performance
glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistive load.
G
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
RMS on-state current
(360° conduction angle)
Tc = 90 °C
25
A
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 8.3 ms
260
A
tp = 10 ms
250
I2t value
tp = 10 ms
312
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 2 . IGT
tr ≤ 100ns
Repetitive
F = 100 Hz
50
A/µs
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
260
°C
IT(RMS)
ITSM
I2t
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol
VDRM
VRRM
Parameter
Repetitive peak off-state voltage
Tj = 125 °C
October 1998 - Ed: 2A
BTB24-... B
Unit
400
600
700
800
400
600
700
800
V
1/4
BTB24 B
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
60
°C/W
Rth (j-c) DC Junction to case for DC
1.5
°C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
1.1
°C/W
Rth (j-a)
Junction to ambient
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20 µs)
IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VD=12V
VGT
VGD
Quadrant
(DC) RL=33Ω
Tj=25°C
I-II-III-IV
Suffix
Unit
5
mA
MIN
I-II-III
MAX
50
IV
MAX
100
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
Tj=25°C
I-II-III-IV
MAX
1.3
V
Tj=125°C
I-II-III-IV
MIN
0.2
V
IG=1.2 IGT
Tj=25°C
I-III-IV
MAX
70
mA
IH *
VTM *
IT= 500mA gate open
ITM= 35A tp= 380µs
Tj=25°C
MAX
50
mA
Tj=25°C
MAX
1.6
V
IDRM
IRRM
VDRM Rated
VRRM Rated
IL
II
dV/dt *
(dV/dt)c *
150
Tj=25°C
MAX
5
µA
Tj=125°C
MAX
2
mA
Linear slope up to VD=67%VDRM
gate open
Tj=125°C
MIN
750
V/µs
(dI/dt)c = 11.1A/ms
Tj=125°C
MIN
10
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Fig. 1: Maximum power dissipation versus RMS
on-state current.
35
P(W)
35
α = 180°
30
20
α = 30°
α
α
100
10
15
0
20
110
α = 180°
5
IT(rms)(A)
2/4
90
Rth=0°C/W
10
180°
5
Rth=1°C/W
15
10
0
Rth=2°C/W
20
α = 60°
5
Rth=3°C/W
25
α = 90°
15
Tcase (°C)
P(W)
30
α = 120°
25
0
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact.
25
120
125
Tamb(°C)
0
20
40
60
80
100
120
140
BTB24 B
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance versus
pulse duration.
IT(rms)(A)
30
1.00
α = 180°
K=[Zth/Rth]
25
Zth(j-c)
20
Zth(j-a)
0.10
15
10
5
tp(s)
Tcase(°C)
0
0
25
50
75
100
125
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical
values).
0.01
1E-3
1.5
IH
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 7: Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
1000
1E+0
1E+1
1E+2 5E+2
ITSM(A)
IGT
1.0
1E-1
Fig. 6: Non Repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0
1E-2
220
200
180
160
140
120
100
80
60
40
20
0
Tj initial=25°C
F=50Hz
Number of cycles
1
10
100
1000
Fig. 8: On-state characteristics (maximum values).
ITM(A)
ITSM(A),I²t(A²s)
300
Tj initial=25°C
Tj=25°C
100
ITSM
500
Tj=Tj max.
I²t
10
200
tp(ms)
100
1
2
Tj max.:
Vto=0.95V
Rt=19mΩ
VTM(V)
5
10
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
3/4
BTB24 B
PACKAGE MECHANICAL DATA
TO220AB Plastic
C
B
REF.
b2
I
L
F
A
l1
a1
l3
l2
a2
b1
b1
c1
e
c2
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
L
I1
l2
l3
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
14.23 15.87 0.560 0.625
4.50
0.177
12.70 14.70 0.500 0.579
10.20 10.45 0.402 0.411
0.64
0.96 0.025 0.038
1.15
1.39 0.045 0.055
4.48
4.82 0.176 0.190
0.35
0.65 0.020 0.026
2.10
2.70 0.083 0.106
2.29
2.79 0.090 0.110
5.85
6.85 0.230 0.270
3.55
4.00 0.140 0.157
2.54
3.00 0.100 0.118
1.30
0.051
1.45
1.75 0.057 0.069
0.80
1.20 0.031 0.047
Cooling method : C
Marking : type number
Weight : 2.25 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
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