Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2004.02.26 CYStech Electronics Corp. Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , IC = 1.5A • Low VCE(sat) • Complementary to BTP8550A3. Symbol Outline BTN8050A3 TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature BTN8050A3 Symbol Limits Unit VCBO VCEO VEBO IC IB Pd Tj Tstg 40 25 6 1.5 0.5 625 150 -55~+150 V V V A A mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2004.02.26 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 40 25 6 45 85 40 100 - Typ. - Max. 100 100 0.5 1.2 1 500 20 Unit V V V nA nA V V V MHz pF Test Conditions IC=100µA IC=2mA IE=100µA VCB=35V VEB=6V IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range BTN8050A3 B 85~160 C 120~200 D 160~320 E 250~500 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2004.02.26 Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V 100 VCE = 1V 10 100 VCE(SAT) @ IC=20IB 10 VCE(SAT) @ IC=10IB 1 1 10 100 1000 Collector Current---IC(mA) 1 10000 Saturation Voltage vs Collector Current 10000 On Voltage vs Collector Current 10000 1000 VBE(SAT) @ IC=10IB On Voltage---(mV) Saturation Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 100 VBE(ON) @ VCE=1V 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTN8050A3 CYStek Product Specification Spec. No. : C223A3 Issued Date : 2003.07.30 Revised Date : 2004.02.26 CYStech Electronics Corp. Page No. : 4/4 TO-92 Dimension Marking: α2 A B 1 2 8050 3 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN8050A3 CYStek Product Specification