CYSTEKEC BTNA14A3 Gentral purpose npn epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 1/4
Gentral Purpose NPN Epitaxial Planar Transistor
BTNA14A3
Description
• The BTNA14A3 is a darlington amplifier transistor
• Complementary to BTPA64A3.
Equivalent Circuit
BTNA14A3
TO-92
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCES
VEBO
IC
Pd
Tj
Tstg
30
30
10
0.5
625
150
-55~+150
V
V
V
A
mW
°C
°C
BTNA14A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCES
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
30
10K
20K
125
Typ.
-
Max.
100
100
1.5
2.0
-
Unit
V
nA
nA
V
V
Test Conditions
IC=100uA
VCE=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
100000
10000
Saturation Voltage---(mV)
Current Gain---HFE
HFE@VCE=5V
10000
1000
1000
100
1
10
100
Collector Current---IC(mA)
BTNA14A3
VCE(SAT)@IC=1000IB
1000
1
10
100
1000
Collector Current ---IC(mA)
CYStek Product Specification
Spec. No. : C214A3
Issued Date : 2003.03.27
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
ON Voltage vs Collector Current
10000
VBE(SAT)@IC=1000IB
VBE(ON)@VCE=5V
ON Voltage --- (mV)
Saturation Voltage---(mV)
10000
1000
100
1000
1
10
100
1000
0.1
10
100
1000
Power Derating Curve
Cutoff Frequency vs Collector Current
1
Power Dissipation--- PD(mW)
Cutoff Frequency---FT(GHZ)
700
FT@VCE=5V
600
500
400
300
200
100
0
0.1
1
10
Collector Current---IC(mA)
BTNA14A3
1
Collector Current ---IC(mA)
Collector Current ---IC(mA)
100
0
50
100
150
Ambient Temperature---Ta(℃ )
CYStek Product Specification
cystek
Spec. No. : C214A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
A14
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA14A3
CYStek Product Specification
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