PHILIPS BU2507AX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
4
0.25
1500
700
8
15
45
5.0
0.5
V
V
A
A
W
V
A
µs
PINNING - SOT399
PIN
PIN CONFIGURATION
DESCRIPTION
1
base
2
collector
3
emitter
Ths ≤ 25 ˚C
IC = 4 A; IB = 0.8 A
f = 16kHz
ICsat = 4 A; f = 16kHz
case isolated
SYMBOL
c
case
b
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
700
8
15
4
6
100
5
45
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
700
-
1.0
-
mA
V
7.5
-
13.5
-
5.0
V
V
-
-
1.1
V
5.0
17
7.0
9.0
TYP.
MAX.
UNIT
68
-
pF
5.0
0.25
6.0
0.5
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
ICES
ICES
PARAMETER
BVEBO
VCEsat
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Emitter-base breakdown voltage
IB = 1 mA
Collector-emitter saturation voltages IC = 4 A; IB = 0.8 A
VBEsat
Base-emitter saturation voltage
IC = 4 A; IB = 0.8 A
hFE
hFE
DC current gain
IC = 100 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
IEBO
VCEOsust
Collector cut-off current
CONDITIONS
2
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
ts
tf
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
ICsat = 4 A; IB(end) = 0.7 A; LB = 6 µH;
-VBB = 4 V
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU2507AX
100
BU2507AF/X
hFE
VCE = 1 V
DIODE
Ths = 25 C
Ths = 85 C
t
IBend
IB
10
t
20us
26us
64us
VCE
1
0.01
t
Fig.1. Switching times waveforms.
0.1
1
10
100
IC / A
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
ICsat
100
90 %
BU2507AF/X
hFE
VCE = 5 V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
10
t
ts
IB
IBend
t
1
0.01
- IBM
Fig.2. Switching times definitions.
0.1
1
10
IC / A
100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
+ 150 v nominal
adjust for ICsat
10
VCEsat / V
BU2507AF/X
Ths = 25 C
Ths = 85 C
Lc
LB
IBend
1
IC/IB = 3
IC/IB = 4
IC/IB = 5
0.1
T.U.T.
Cfb
-VBB
0.01
0.1
September 1997
1
10
IC / A
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.3. Switching times test circuit.
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
VBEsat / V
BU2507AX
BU2507AF/AX
120
Ths = 25 C
Ths = 85 C
110
1.2
1.1
with heatsink compound
100
90
80
70
IC = 4 A
1
Normalised Power Derating
PD%
60
0.9
50
40
IC = 3 A
0.8
30
20
0.7
10
0
0.6
0
0
0.5
1
1.5
IB / A
BU2507AF/DF/AX/DX
Ptot / W
40
60
80
Ths / C
100
120
140
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
10
20
2
BU2507AF/X/DF/X
Zth / K/W
10
Ths = 25 C
Ths = 85 C
0.5
1
0.1
1
0.2
0.1
0.05
0.02
PD
0.01
tp
D=
tp
T
D=0
t
T
0.1
0.001
1E-06
0
0.5
1
IB / A 1.5
2
ts/tf/ us
10E-2
1E+00
t/s
Fig.8. Typical losses.
PTOT = f (IB); IC = 4 A; f = 16 kHz
10
1E-4
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
BU2507AF/AX/Df/DX85ts/tf
8
6
4
2
0
0
0.5
1
1.5
IB / A
2
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AX
MECHANICAL DATA
Dimensions in mm
5.8 max
16.0 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
0.95 max
5.45
5.45
3.3
Fig.12. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.100
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