Rohm BU4011B Quad 2-input nand gate Datasheet

Standard ICs
Quad 2-input NAND gate
BU4011B / BU4011BF / BU4011BFV
The BU4011B, BU4011BF, and BU4011BFV are dual-input positive logic NAND gates.
Four circuits are contained on a single chip. An inverter-based buffer has been added to the gate output, enabling
improved input / output propagation characteristics, and an increased load capacitance minimizes fluctuation in propagation time.
•1)Features
Low power dissipation.
4) High fan-out.
5) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.
2) Wide range of operating power supply voltage.
3) High input impedance.
•Block diagram
•Absolute maximum ratings (V
Parameter
SS
A1
1
14 VDD
B1
2
13 A4
O1
3
12 B4
O2
4
11 O4
B2
5
10 O3
A2
6
9
B3
VSS
7
8
A3
= 0V, Ta = 25°C)
Symbol
Limits
Unit
Power supply voltage
VDD
– 0.3 ~ + 18
V
Power dissipation
Pd
1000 (DIP), 450 (SOP)
350 (SSOP-B14)
mW
Operating temperature
Topr
– 40 ~ + 85
°C
Storage temperature
Tstg
– 55 ~ + 150
°C
– 0.3 ~ VDD + 0.3
V
Input voltage
VIN
1
Standard ICs
BU4011B / BU4011BF / BU4011BFV
characteristics
•DCElectrical
characteristics (unless otherwise noted, V
SS
Parameter
Symbol
Input high-level voltage
VIH
Input low-level voltage
Input high-level current
Input low-level current
Output high-level voltage
Output low-level voltage
Output high-level current
Output low-level current
Static current dissipation
2
= 0V, Ta = 25°C)
Min.
Typ.
Max.
3.5
—
—
7.0
—
—
11.0
—
—
15
—
—
1.5
5
—
—
3.0
—
—
4.0
IIH
—
—
IIL
—
4.95
VIL
VOH
VOL
IOH
IOL
IDD
Unit
VDD (V)
Conditions
Measurement
circuit
—
Fig. 1
—
Fig. 1
5
V
10
V
10
0.3
µA
15
VIH = 15V
Fig. 1
—
– 0.3
µA
15
VIL = 0V
Fig. 1
—
—
IO = 0mA
Fig. 1
IO = 0mA
Fig. 1
9.95
—
—
14.95
—
—
—
—
0.05
—
—
0.05
—
15
5
V
10
15
5
V
10
—
0.05
15
– 0.16
—
—
5
VOH = 4.6V
– 0.4
—
—
10
VOH = 9.5V
– 1.2
—
—
15
VOH = 13.5V
0.44
—
—
5
VOL = 0.4V
1.1
—
—
10
VOL = 0.5V
3.0
—
—
15
VOL = 1.5V
—
—
1
—
—
2
—
—
4
mA
mA
Fig. 1
Fig. 1
5
µA
10
15
VI = VDD or GND
—
Standard ICs
BU4011B / BU4011BF / BU4011BFV
Switching characteristics (unless otherwise noted, Ta = 25°C, Vss = 0V, CL = 50pF)
Parameter
Output rise time
Output fall time
“L” to “H”
Propagation delay time
“H” to “L”
Propagation delay time
Input capacitance
Symbol
tTLH
tTHL
tPLH
tPHL
CIN
Min.
Typ.
Max.
—
180
360
—
90
180
—
65
130
—
100
200
—
50
100
Unit.
VDD (V)
90
180
50
100
—
40
80
15
—
90
180
5
80
—
5
—
•Measurement circuits
Fig. 2
—
Fig. 2
—
Fig. 2
—
—
10
—
100
—
5
ns
80
50
Fig. 2
15
40
40
—
10
ns
—
—
Measurement
circuit
5
—
—
Conditions
15
5
ns
10
ns
10
15
—
pF
VDD
A
V
GND
Fig. 1 DC characteristics
20ns
VDD
20ns
90%
50%
Input waveform
10%
tPHL
Output waveform
tPLH
90%
50%
P.G
CL = 50pF
GND
10%
tTHL
tTLH
Fig. 2 Switching characteristics
3
Standard ICs
BU4011B / BU4011BF / BU4011BFV
•Electrical characteristic curve
POWER DISSIPATION : Pd (mW)
1200
DIP14
1000
800
600
SOP14
400 SSOP - B14
200
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE: Ta (°C)
Fig. 3 Power dissipation vs. Ta
•External dimensions (Units: mm)
BU4011B
BU4011BF
8.7 ± 0.2
0.3 ± 0.1
1.27
0.4 ± 0.1
0.3Min.
0.15
5.0 ± 0.2
14
8
1
7
0.65
0.15 ± 0.1
4.4 ± 0.2
0.1
6.4 ± 0.3
7
SOP14
BU4011BFV
1.15 ± 0.1
1
0.5 ± 0.1 0° ~ 15°
2.54
DIP14
0.22 ± 0.1
0.3Min.
0.1
SSOP - B14
4
8
0.15 ± 0.1
1.5 ± 0.1
7.62
14
4.4 ± 0.2
6.2 ± 0.3
7
0.11
1
6.5 ± 0.3
8
0.51Min.
14
3.2 ± 0.2
4.25 ± 0.3
19.4 ± 0.3
Similar pages