BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 1 APPLICATIONS ■ HIGH RUGGEDNESS ELECTRONIC IGNITIONS 2 3 3 2 2 TO-218 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU941Z V CEO Collector-Emitter Voltage (IB = 0) V EBO Emitter-Base Voltage (IC = 0) IC I CM IB I BM Uni t BUB941ZPFI 350 V 5 V Collector Current 15 A Collector Peak Current 30 A Base Current 1 A Base Peak Current 5 A o P t ot Total Dissipation at Tc = 25 C T stg Storage T emperature Tj BU941Z P Max. O perating Junction Temperature January 2000 180 155 65 -65 to 200 -65 to 175 -65 to 175 o W C 200 175 175 o C 1/8 BU941Z/BU941ZP/BU941ZPFI THERMAL DATA R t hj-ca se Thermal Resistance Junct ion-case Max TO-3 TO-218 ISOW AT T218 0.97 0.97 2.3 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEO Parameter Test Cond ition s Min. Typ . Max. Un it 100 0.5 µA mA 20 mA 500 V Collector Cut-off Current (I B = 0) V CE = 300 V V CE = 300 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CL ∗ Clamping Voltage I C = 100 mA V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 8 A I C = 10 A I C = 12 A IB = 100 mA IB = 250 mA IB = 300 mA 1.8 1.8 2 V V V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 8 A I C = 10 A I C = 12 A IB = 100 mA IB = 250 mA IB = 300 mA 2.2 2.5 2.7 V V V DC Current Gain IC = 5 A V CE = 10 V 2.5 V h F E∗ VF ts tf o T j = 125 C 350 Functional T est (see fig. 1) V CC = 24 V INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) V CC = 12 V L= 7 mH R BE = 47 Ω V BE = 0 V c la mp = 300 V IC = 7 A I B = 70 mA L= 7 mH ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/8 300 Diode F orward Voltage I F = 10 A DC Current Gain 10 A 15 0.5 µs µs BU941Z/BU941ZP/BU941ZPFI DC Current Gain Collector-emitter Saturation Voltage Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Base-emitter Saturation Voltage Collector-emitter Saturation Voltage 3/8 BU941Z/BU941ZP/BU941ZPFI FIGURE 1: Functional Test Circuit FIGURE 3: Switching Time Test Circuit 4/8 FIGURE 2: Functional Test Waveforms BU941Z/BU941ZP/BU941ZPFI TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 5/8 BU941Z/BU941ZP/BU941ZPFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 6/8 1 2 3 P025A BU941Z/BU941ZP/BU941ZPFI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/A 7/8 BU941Z/BU941ZP/BU941ZPFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8