BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount http://onsemi.com The BUB323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features • Integrated High−Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed AUTOPROTECTED DARLINGTON 10 AMPERES 360−450 VOLTS CLAMP 150 WATTS Over the −40°C to +125°C Temperature Range • Clamping Energy Capability 100% Tested in a Live • • • Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Pb−Free Packages are Available 360 V CLAMP MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Rating MARKING DIAGRAM Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 350 Vdc Collector−Emitter Voltage VEBO 6.0 Vdc Collector Current − Continuous − Peak IC ICM 10 20 Adc Base Current IB IBM 3.0 6.0 Adc 150 1.0 W W/_C TJ, Tstg −65 to +175 _C Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W ORDERING INFORMATION TL 260 _C See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. − Continuous − Peak Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes, 1/8 in from Case for 5 Seconds BUB323ZG AYWW D2PAK CASE 418B STYLE 1 BUB323Z A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 1 Publication Order Number: BUB323Z/D BUB323Z ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCLAMP 350 − 450 Vdc Collector−Emitter Cutoff Current (VCE = 200 V, IB = 0) ICEO − − 100 mAdc Emitter−Base Leakage Current (VEB = 6.0 Vdc, IC = 0) IEBO − − 50 mAdc − − − − 2.2 2.5 − − − − − − − − − − 1.6 1.8 1.8 2.1 1.7 1.1 1.3 − − 2.1 2.3 − − 2.5 150 500 − − − 3400 fT − − 2.0 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − − 200 pF Input Capacitance (VEB = 6.0 V) Cib − − 550 pF WCLAMP 200 − − mJ tfi − 625 − ns tsi − 10 30 ms tc − 1.7 − ms OFF CHARACTERISTICS (Note 1) Collector−Emitter Clamping Voltage (IC = 7.0 A) (TC = − 40°C to +125°C) ON CHARACTERISTICS (Note 1) Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) VBE(sat) Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) VCE(sat) (TC = 125°C) (IC = 8.0 Adc, IB = 0.1 Adc) (TC = 125°C) (IC = 10 Adc, IB = 0.25 Adc) Base−Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Vdc Vdc VBE(on) (TC = − 40°C to +125°C) Diode Forward Voltage Drop (IF = 10 Adc) VF DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) Vdc hFE (TC = − 40°C to +125°C) Vdc − DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) CLAMPING ENERGY (See Notes) Repetitive Non−Destructive Energy Dissipated at turn−off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4) SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time Storage Time Cross−over Time (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. http://onsemi.com 2 BUB323Z IC MERCURY CONTACTS WETTED RELAY INOM = 6.5 A Output transistor turns on: IC = 40 mA L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE High Voltage Circuit turns on: IC = 20 mA RBE = 100 W Avalanche diode turns on: IC = 100 mA 250 V IB CURRENT SOURCE 300 V Icer Leakage Current 340 V VBEoff IB2 SOURCE VCE VCLAMP NOMINAL = 400 V IC MONITOR 0.1 W NON INDUCTIVE Figure 1. IC = f(VCE) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a built−in avalanche diode and a special high voltage driving circuit. During an auto−protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built−in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 W, Vgate = 280 V, L = 8.0 mH 10 IC, COLLECTOR CURRENT (AMPS) 300ms 1 1ms TC = 25°C 10ms 250ms 0.1 0.01 0.001 10 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340V VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area http://onsemi.com 3 1000 BUB323Z IC The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. ICPEAK IC HIGH IC LOW VCE (a) VGATE MIN IC ICPEAK IC HIGH IC LOW VCE (b) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE (c) VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE (d) VGATE MIN Figure 4. Energy Test Criteria for BU323Z http://onsemi.com 4 BUB323Z 10000 10000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TYPICAL TJ = 125°C 1000 −40°C 25°C 100 1000 TYP − 6Σ TYP + 6Σ 100 VCE = 5 V, TJ = 25°C VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 100 10000 5.0 4.5 TJ = 25°C IC = 3 A 4.0 3.5 5A 3.0 8A 10 A 2.5 2.0 7A 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 2.4 VBE(on), BASE−EMITTER VOLTAGE (VOLTS) VBE, BASE−EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 TJ = 25°C 1.4 125°C 1.0 0.8 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 2.0 1.8 1.6 1.4 1.2 1.0 25°C 0.8 0.6 0.4 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. Collector−Emitter Saturation Voltage 2.0 1.2 IC/IB = 150 2.2 Figure 7. Collector Saturation Region 1.6 100000 Figure 6. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 2.0 1.8 VCE = 2 VOLTS 1.6 1.4 TJ = 25°C 1.2 1.0 125°C 0.8 0.6 0.1 Figure 9. Base−Emitter Saturation Voltage 1 IC, COLLECTOR CURRENT (AMPS) Figure 10. Base−Emitter “ON” Voltages http://onsemi.com 5 10 BUB323Z ORDERING INFORMATION Package Shipping † BUB323Z D2PAK 50 Units / Rail BUB323ZG D2PAK 50 Units / Rail Device (Pb−Free) BUB323ZT4 D2PAK 800 Units / Tape & Reel BUB323ZT4G D2PAK 800 Units / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BUB323Z PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE H M T B M N R M STYLE 1: PIN 1. 2. 3. 4. P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 5.08 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 BUB323Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BUB323Z/D