BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) APPLICATIONS ■ HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 2 3 3 1 TO-220 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CES Collector-Emitter Voltage (VBE = 0) 500 V V CEO Collector-Emitter Voltage (IB = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) IC I CM IB I BM 5 V Collector Current 10 A Collector Peak Current 15 A Base Current 1 A Base Peak Current 5 A o P t ot Total Dissipation at Tc = 25 C T stg Storage T emperature Tj Max. O perating Junction Temperature January 1999 125 W -65 to 175 o C 175 o C 1/7 BU931T / BUB931T THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 1.2 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Test Cond ition s Max. Un it o 100 0.5 µA mA o 100 0.5 µA mA 20 mA Collector Cut-off Current (V BE = 0) V CE = 500 V V CE = 500 V Tj = 125 C Collector Cut-off Current (I B = 0) V CE = 450 V V CE = 450 V Tj = 125 C Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO( SUS) ∗ Collector-Emitter Saturation Voltage I C = 100 mA L = 10 mH I B = 0 V c la mp = RATED V CEO (See fig.4) Min. Typ . 400 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 7 A IC = 8 A I B = 70 mA I B = 100 mA 1.6 1.8 V V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 7 A IC = 8 A I B = 70 mA I B = 100 mA 2.2 2.4 V V DC Current Gain IC = 5 A 2.5 V h F E∗ VF ts tf V CE = 10 V Functional T est (see fig. 1) V CC = 24 V Vc la mp = 400 V L= 7 mH INDUCTIVE LO AD Storage Time Fall Time (see fig. 3) V CC = 12 V Vc la mp = 300 V L= 7 mH I C = 7 A I B = 70 mA R BE = 47 Ω V BE = 0 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/7 300 Diode F orward Voltage I F = 10 A DC Current Gain 8 A 15 0.5 µs µs BU931T / BUB931T Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Saturation Voltage Switching Time Inductive Load 3/7 BU931T / BUB931T FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit 4/7 BU931T / BUB931T TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/7 BU931T / BUB931T TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL ”A” DETAIL”A” A1 B2 E B G L2 L L3 P011P6/E 6/7 BU931T / BUB931T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7