Order this document by BUD44D2/D SEMICONDUCTOR TECHNICAL DATA POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS $ " $# % #)% %"&&'#% )' "'%' # '#% !''% # " ( '" "' "'&'(%'#" ')#% The BUD44D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector–Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads CASE 369–07 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ It’s characteristics make it also suitable for PFC application. MAXIMUM RATINGS VCEO 400 Vdc Collector–Base Breakdown Voltage VCBO 700 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous — Peak (1) IC ICM 2 5 Adc Base Current — Continuous Base Current — Peak (1) IB IBM 1 2 Adc *Total Device Dissipation @ TC = 25_C *Derate above 25°C PD 25 0.2 Watt W/_C TJ, Tstg – 65 to 150 _C Operating and Storage Temperature CASE 369A–13 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 6.7 0.265 6.7 Collector–Emitter Sustaining Voltage THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case — Junction to Ambient _C/W RθJC RθJA 5 71.4 TL 260 Maximum Lead Temperature for Soldering Purposes: 1/8″ from case for 5 seconds 1.6 0.063 0.265″ Unit 1.8 Value 30 Symbol 0.118 .070″ Rating 1.6 0.063 2.3 2.3 0.090 0.090 _C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 BUD44D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 470 Vdc Collector–Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 920 Vdc Emitter–Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14.5 Vdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCEO, IB = 0) @ TC = 25°C @ TC = 125°C ICEO 50 500 µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C ICES 50 500 100 µAdc IEBO 100 µAdc Collector Cutoff Current (VCE = 500 V, VEB = 0) Emitter–Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) VBE(sat) Vdc @ TC = 25°C @ TC = 125°C 0.78 0.65 0.9 0.8 @ TC = 25°C @ TC = 125°C 0.87 0.76 1 0.9 @ TC = 25°C @ TC = 125°C 0.45 0.67 0.65 1 (IC = 0.4 Adc, IB = 40 mAdc) @ TC = 25°C @ TC = 125°C 0.25 0.27 0.4 0.5 (IC = 1 Adc, IB = 0.2 Adc) @ TC = 25°C @ TC = 125°C 0.28 0.35 0.5 0.6 (IC = 1 Adc, IB = 0.2 Adc) Collector–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 20 mAdc) DC Current Gain (IC = 0.4 Adc, VCE = 1 Vdc) VCE(sat) Vdc hFE @ TC = 25°C @ TC = 125°C 20 18 32 26 (IC = 1 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C 10 7 14 9.5 (IC = 2 Adc, VCE = 5 Vdc) @ TC = 25°C 8 11 — DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 0.2 Adc) 0.8 1 (IEC = 0.2 Adc) @ TC = 125°C 0.6 (IEC = 0.4 Adc) @ TC = 25°C 0.9 1.2 (IEC = 1 Adc) @ TC = 25°C 1.1 1.5 Forward Recovery Time (see Figure 22 bis) (IF = 0.2 Adc, di/dt = 10 A/µs) 2 VEC V @ TC = 25°C Tfr 415 ns @ TC = 25°C (IF = 0.4 Adc, di/dt = 10 A/µs) @ TC = 25°C 390 (IF = 1 Adc, di/dt = 10 A/µs) @ TC = 25°C 340 Motorola Bipolar Power Transistor Device Data BUD44D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 IC = 0.4 A IB1 = 40 mA VCC = 300 V IC = 1 A IB1 = 0.2 A VCC = 300 V @ 1 µs @ TC = 25°C @ TC = 125°C @ 3 µs @ TC = 25°C @ TC = 125°C 0.5 1.3 @ 1 µs @ TC = 25°C @ TC = 125°C 4.4 12.8 @ 3 µs @ TC = 25°C @ TC = 125°C 0.5 1.8 VCE(dsat) V 3.3 6.8 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 50 75 pF Input Capacitance (VEB = 8 Vdc) Cib 240 500 pF SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs) Turn–on Time Turn–off Time IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 Vdc Turn–on Time Turn–off Time IC = 0.5 Adc, IB1 = 50 mAdc IB2 = 250 mAdc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 90 105 150 ns @ TC = 25°C @ TC = 125°C toff 1.1 1.5 1.25 µs @ TC = 25°C @ TC = 125°C ton 600 ns @ TC = 25°C @ TC = 125°C toff 1000 ns 400 600 750 1300 SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time @ TC = 25°C @ TC = 125°C tf 110 105 150 ns @ TC = 25°C @ TC = 125°C ts 0.55 0.7 0.75 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 85 80 150 ns Fall Time @ TC = 25°C @ TC = 125°C tf 100 90 150 ns @ TC = 25°C @ TC = 125°C ts 1.05 1.45 1.5 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 100 100 175 ns Fall Time @ TC = 25°C @ TC = 125°C tf 110 180 150 ns @ TC = 25°C @ TC = 125°C ts 2.35 µs Crossover Time @ TC = 25°C @ TC = 125°C tc 180 400 300 ns Fall Time @ TC = 25°C @ TC = 125°C tf 150 175 225 ns @ TC = 25°C @ TC = 125°C ts 1.95 µs @ TC = 25°C @ TC = 125°C tc 250 ns Storage Time Storage Time Storage Time Storage Time IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 0.4 Adc IB1 = 40 mAdc IB2 = 40 mAdc Crossover Time Motorola Bipolar Power Transistor Device Data 2.05 2.8 1.65 2.2 150 330 3 BUD44D2 TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V VCE = 1 V 80 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 80 TJ = 125°C 60 TJ = 25°C 40 TJ = – 20°C 20 TJ = 125°C 60 TJ = 25°C 40 TJ = – 20°C 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.001 10 Figure 1. DC Current Gain @ 1 Volt 10 Figure 2. DC Current Gain @ 5 Volt 4 10 TJ = 25°C 3 IC/IB = 5 2A VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1.5 A 1A 2 400 mA 1 TJ = 25°C TJ = 125°C 1 TJ = – 20°C IC = 200 mA 0 1 10 100 IB, BASE CURRENT (mA) 0.1 0.001 1000 Figure 3. Collector Saturation Region 10 Figure 4. Collector–Emitter Saturation Voltage 10 10 IC/IB = 20 VCE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25°C 1 TJ = 125°C TJ = – 20°C TJ = 25°C 1 TJ = 125°C TJ = – 20°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector–Emitter Saturation Voltage 4 10 0.1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Collector–Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 1 BUD44D2 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 1 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = – 20°C TJ = 125°C TJ = – 20°C 1 TJ = 125°C TJ = 25°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.001 10 Figure 7A. Base–Emitter Saturation Region 10 Figure 7B. Base–Emitter Saturation Region 10 10 1 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) TJ = – 20°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 7C. Base–Emitter Saturation Region Motorola Bipolar Power Transistor Device Data 1 25°C 1 125°C 0.1 0.01 0.1 1 REVERSE EMITTER–COLLECTOR CURRENT (AMPS) 10 Figure 8. Forward Diode Voltage 5 BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 1000 1000 TJ = 25°C f(test) = 1 MHz C, CAPACITANCE (pF) Cib (pF) TJ = 125°C TJ = 25°C 800 IC/IB = 10 IBon = IBoff VCC = 300 V PW = 40 µs t, TIME (ns) 100 Cob (pF) 600 400 IC/IB = 5 10 200 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 0 0.2 100 Figure 9. Capacitance 3 IC/IB = 10 3500 IBon = IBoff VCC = 300 V PW = 40 µs 2.5 2 IC/IB = 5 t, TIME ( µs) t, TIME ( µs) 3000 2500 2000 1.5 1 1500 0 TJ = 125°C TJ = 25°C 0.5 TJ = 125°C TJ = 25°C 1000 1 IC, COLLECTOR CURRENT (AMPS) 0 0.4 2 Figure 11. Resistive Switch Time, toff IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1.2 0.8 1.6 IC, COLLECTOR CURRENT (AMPS) 2 Figure 12. Inductive Storage Time, tsi @ IC/IB = 5 700 4 IC/IB = 5 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 500 400 TJ = 125°C TJ = 25°C t si , STORAGE TIME (µs) TJ = 125°C TJ = 25°C 600 t, TIME (ns) 2 Figure 10. Resistive Switch Time, ton 4000 tc 300 200 tfi 3 IC = 1 A 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH 1 IC = 0.3 A 100 0 0 0 1 0.5 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5 6 0.8 1.4 IC, COLLECTOR CURRENT (AMPS) 2 3 6 9 hFE, FORCED GAIN 12 Figure 14. Inductive Storage Time Motorola Bipolar Power Transistor Device Data 15 BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 700 1000 t fi , FALL TIME (ns) 600 500 TJ = 125°C TJ = 25°C 400 300 200 TJ = 125°C TJ = 25°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC = 0.3 A t c , CROSSOVER TIME (ns) IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 µH 800 IC = 1 A 600 400 200 100 IC = 0.3 A IC = 1 A 0 0 3 5 7 9 11 hFE, FORCED GAIN 13 15 3 6 Figure 15. Inductive Fall Time 15 Figure 16. Inductive Crossover Time 900 2000 TJ = 125°C TJ = 25°C 800 700 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 µH 1500 IC/IB = 20 t, TIME (ns) 600 t, TIME (ns) 12 9 hFE, FORCED GAIN 500 400 300 IC/IB = 10 IBon = IBoff VCC = 15 V 0 VZ = 300 V LC = 200 µH 0.8 1.6 1.2 IC, COLLECTOR CURRENT (AMPS) 0.4 IC/IB = 20 1000 500 200 100 TJ = 125°C TJ = 25°C IC/IB = 10 0 2 0.4 Figure 17. Inductive Switching, tfi 0.8 1.6 1.2 IC, COLLECTOR CURRENT (AMPS) 2 Figure 18. Inductive Switching, tc 3000 3000 t, TIME (ns) 2000 t, TIME (ns) IBon = IBoff VCC = 15 V 2500 VZ = 300 V LC = 200 µH IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 µH IC/IB = 5 IB = 50 mA 2000 1500 IC/IB = 20 1000 IB = 100 mA IB = 200 mA 1000 TJ = 125°C TJ = 25°C IB = 500 mA 500 0 0 0.5 1 2 1.5 IC, COLLECTOR CURRENT (AMPS) 2.5 Figure 19. Inductive Storage Time, tsi Motorola Bipolar Power Transistor Device Data 3 0 IC/IB = 10 0.5 1.5 1 IC, COLLECTOR CURRENT (AMPS) 2 Figure 20. Inductive Storage Time, tsi 7 BUD44D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE 90% IC IC 9 dyn 1 µs 8 dyn 3 µs 6 0V tfi tsi 7 10% IC 10% Vclamp Vclamp 5 tc 4 90% IB 1 µs IB 90% IB1 IB 3 2 3 µs 1 0 TIME 0 Figure 21. Dynamic Saturation Voltage Measurements 2 1 3 4 TIME 5 6 7 Figure 22. Inductive Switching Measurements VFRM VFR (1.1 VF unless otherwise specified) VF VF tfr 0.1 VF 0 IF 10% IF 0 2 4 6 8 10 Figure 22 bis. tfr Measurements 8 Motorola Bipolar Power Transistor Device Data 8 BUD44D2 TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 µF 100 Ω 3W 150 Ω 3W IC PEAK 100 µF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A 50 Ω MJE210 COMMON 500 µF 150 Ω 3W IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA MTP12N10 1 µF –Voff Inductive Switching L = 200 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 µH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL STATIC CHARACTERISTICS 1100 440 1000 t fr , FORWARD RECOVERY TIME (ns) TJ = 25°C BVCER (VOLTS) @ 10 mA BVCER (VOLTS) 900 800 700 BVCER(sus) @ 200 mA 600 500 400 dI/dt = 10 A/µs TC = 25°C 420 400 380 360 340 320 300 10 100 RBE (Ω) Figure 23. BVCER 1000 0 0.5 1 1.5 IF, FORWARD CURRENT (AMP) 2 Figure 24. Forward Recovery Time tfr Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Bipolar Power Transistor Device Data 9 BUD44D2 PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S –T– K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369–07 ISSUE K –T– C B V E R 4 Z A S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE 3 U K F J L H D 2 PL G 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– BASE COLLECTOR EMITTER COLLECTOR CASE 369A–13 ISSUE W How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 ◊ Motorola Bipolar Power Transistor Device Data *BUD44D2/D* BUD44D2/D