PHILIPS BUK213-50Y Single channel high-side topfet Datasheet

BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
Rev. 02 — 06 June 2002
Product data
1. Product profile
1.1 Description
Monolithic temperature and overload protected single high-side power switch based
on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic
package.
Product availability:
BUK208-50Y in SOT263B-01
BUK213-50Y in SOT426 (D2-PAK).
1.2 Features
■
■
■
■
■
■
■
Very low quiescent current
Power TrenchMOS™
Overtemperature protection
Over and undervoltage protection
Reverse battery protection
Low charge pump noise
Loss of ground protection
■
■
■
■
■
■
■
CMOS logic capability
Negative load clamping
Overload protection
ESD protection for all pins
Diagnostic status indication
Operating voltage down to 5.5 V
Current limitation.
1.3 Applications
■ 12 and 24V grounded loads
■ Inductive loads
■ High inrush current loads
■ Replacement for relays and fuses.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol
Parameter
Min
Max
Unit
RBLon
on-state resistance at 25 °C
-
100
mΩ
IL
continuous load current
-
8.5
A
IL(nom)
nominal load current (ISO)
3.6
-
A
IL(lim)
limiting load current
12
24
A
VBG
operating voltage
5.5
35
V
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
2. Pinning information
mb
mb
B
S
I
1 2 3 4 5
1
5
MBL431
Fig 1. Pinning; SOT426 (D2-PAK).
03pa56
P
L
G
MBL264
Fig 2. Pinning; SOT263B-01.
Fig 3. Symbol; (HSS) TOPFETTM.
2.1 Pin description
Table 2:
Pin description
Symbol
Pin
I/O
Description
G
1
-
circuit common ground
I
2
I
battery
B
3
-
S
4
O
status
L
5
O
load
-
mb
-
[1]
[2]
[2]
mounting base
It is not possible to make a connection to pin 3 of the SOT426 package.
The battery is connected to the mounting base.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
input
[1] [2]
Rev. 02 — 06 June 2002
2 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
3. Block diagram
battery
4
status
3/mb
VOLTAGE REGULATOR
CHARGE PUMP
SHORT CIRCUIT
PROTECTION
POWER
MOSFET
CURRENT LIMIT
OVERVOLTAGE
PROTECTION
2
input
CONTROL
LOGIC
UNDERVOLTAGE
PROTECTION
load
LOW CURRENT
DETECT
5
TEMPERATURE
SENSOR
03pa33
RG
1
ground
Fig 4. Elements of the high-side TOPFET switch.
4. Functional description
Table 3:
Truth table
Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present;
UV = undervoltage; OV = overvoltage; LC = low current or open circuit load; SC = short circuit; OT = overtemperature [1].
Input
[1]
Supply
Load
Load
Status
Operating mode
UV
OV
LC
SC
OT
output
L
X
X
X
X
X
OFF
H
off
H
0
0
0
0
0
ON
H
on & normal
H
0
0
1
0
0
ON
L
on & low current detect
H
1
0
X
X
X
OFF
H
supply undervoltage lockout
H
0
1
X
0
0
OFF
H
supply overvoltage shutdown
H
0
0
0
1
X
OFF
L
SC tripped
H
0
0
0
0
1
OFF
L
OT shutdown
The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold.
See “Overtemperature protection” characteristics in Table 6.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
3 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VBG
continuous supply voltage
IL
continuous load current
Tmb ≤ 112 °C
Tmb ≤ 25 °C
Min
Max
Unit
-
50
V
-
8.5
A
Ptot
total power dissipation
-
48
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
-
150
°C
Tmb
mounting base temperature
-
260
°C
-
16
V
-
32
V
[2]
3.3
-
kΩ
[3]
3.3
-
kΩ
−5
+5
mA
−50
+50
mA
−5
+5
mA
δ ≤ 0.1; tp = 300 µs
−50
+50
mA
Tj = 150 °C prior to turn-off; IL = 2 A
-
100
mJ
Human body model; C = 100 pF;
R = 1.5 kΩ
-
2
kV
during soldering (≤ 10 s)
Reverse battery voltage
VBG
continuous reverse voltage
VBG
repetitive reverse voltage
[1]
External resistor
external resistor
RI
RS
Input current
II
continuous current
II
repetitive peak current
δ ≤ 0.1; tp = 300 µs
Status current
IS
continuous current
IS
repetitive peak current
Inductive load clamping
EBL(CL)
non-repetitive clamping energy
Electrostatic discharge
Vesd
[1]
[2]
[3]
electrostatic discharge voltage
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse current. The internal ground resistor limits the reverse battery ground current.
To limit input current during reverse battery and transient overvoltages.
To limit status current during reverse battery and transient overvoltages.
6. Thermal characteristics
Table 5:
Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Rth(j-a)
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
-
2.1
2.6
K/W
thermal resistance from junction to mounted on printed circuit board;
ambient
minimum footprint; SOT426
-
-
50
K/W
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
4 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
7. Static characteristics
Table 6:
Static characteristics
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IG = 1 mA; Figure 6
50
55
65
V
Clamping voltage
VBG
battery-ground voltage
VBL
battery-load voltage
IL = IG = 1 mA
50
55
65
V
VLG
negative load-ground
IL = 10 mA; Figure 12 and 14
−18
−23
−28
V
VLG
negative load voltage
IL = 2 A; tp = 300 µs
−20
−25
−30
V
5.5
-
35
V
Tmb = 150 °C
-
-
20
µA
Tmb = 25 °C
-
0.1
2
µA
Tmb = 150 °C
-
-
20
µA
Tmb = 25 °C
-
0.1
1
µA
[1]
Supply voltage
VBG
operating range
battery-ground
quiescent current
VLG = 0 V; Figure 10
Current
IB
IL
off-state load current
[2]
VBL = VBG
IG
operating current
Figure 6
IL(nom)
nominal load current (ISO)
VBL = 0.5 V; Tmb = 85 °C
-
2
4
mA
3.6
-
-
A
Tmb = 25 °C
-
80
100
mΩ
Tmb = 150 °C
-
-
200
mΩ
-
100
125
mΩ
[3]
Resistance [4]
RBLon
on-state resistance
9 ≤ VBG ≤ 35 V; IL = 2 A; Figure 5
VBG = 6 V; IL = 2 A
Tmb = 25 °C
Tmb = 150 °C
-
-
250
mΩ
internal ground resistance
IG = 10 mA
95
150
190
Ω
II
input current
VIG = 5 V
20
90
160
µA
RG
Input [5]
VIG
input clamping voltage
II = 200 µA
5.5
7
8.5
V
VIG(ON)
input turn-on threshold voltage
Figure 9
-
2.4
3
V
VIG(OFF)
input turn-off threshold voltage
1.5
2.1
-
V
∆VIG
input turn-on threshold hysteresis
-
0.3
-
V
II(ON)
input turn-on current
VIG = 3 V
-
-
100
µA
II(OFF)
input turn-off current
VIG = 1.5 V
10
-
-
µA
Tmb = −40 to +150 °C
90
-
600
mA
Tmb = 25 °C; Figure 15
150
300
450
mA
-
60
-
mA
2
4.2
5.5
V
Low current detection
[6][9]
IL(LC)
low current detection threshold
∆IL(LC)
hysteresis
Undervoltage
VBG(UV)
[9]
[7]
low supply threshold voltage
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
5 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 6:
Static characteristics…continued
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
∆VBG(UV) hysteresis
Overvoltage
VBG(OV)
Min
Typ
Max
Unit
-
0.5
-
V
40
45
50
V
-
1
-
V
[9]
[8]
high supply threshold voltage
∆VBG(OV) hysteresis
Overload protection [9]
IL(lim)
limiting load current
Short circuit load protection
VBL(TO)
VBG ≥ 9 V; VBL = VBG; Figure 8
[10]
12
18
24
A
VBG = 16 V; Figure 11
[11]
8
10
12
V
15
20
25
V
150
170
190
°C
-
10
-
°C
5.5
7
8.5
V
Tmb = −40 °C
-
-
1
V
Tmb = 25 °C
-
0.7
0.8
V
-
-
15
µA
-
0.1
1
µA
-
47
-
kΩ
[9][10]
battery load threshold voltage
VBG = 35 V
Overtemperature protection
[9][10]
Tj(TO)
threshold junction temperature
∆Tj(TO)
hysteresis
[12]
Status [5][9]
VSG
status clamping voltage
IS = 100 µA
VSG
status low voltage
IS = 100 µA; Figure 7
status leakage current
IS
VSG = 5 V
Tmb = 150 °C
Tmb = 25 °C
external pull-up resistor
RS
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
VSG = 5 V
[13]
For a high-side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
This is the current drawn from the supply when the input is LOW, and includes leakage current to the load.
Defined as in ISO 10483-1. For comparison purposes only.
The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the
applied load current.
9 V ≤ VBG ≤ 16 V
9 V ≤ VBG ≤ 35 V. A low current load can be detected in the on-state.
Undervoltage sensor causes the device to switch off and reset.
Overvoltage sensor causes the device to switch off to protect the load.
See Table 3 “Truth table”
5.5 V ≤ VBG ≤ 35 V
The battery to load threshold voltage for short circuit is approximately proportional to the battery supply voltage.
After cooling below the reset temperature the switch will resume normal operation.
The status output is an open drain transistor and requires an external pull-up circuit to indicate a logic HIGH
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
6 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa54
200
RBLon
(mΩ)
Tj = 150 °C
160
120
Tj = 25 °C
80
Tj = −40 °C
40
0
20
10
0
30
40
VBG (V)
IL = 2 A; VIG = 5 V
Fig 5. Battery-load on-state resistance as a function of battery-ground voltage; typical values.
03pa55
4
IG
(mA)
clamping
3
overvoltage
shutdown
undervoltage
shutdown
Tj = −40 °C
Tj = 25 °C
2
Tj = 150 °C
1
0
0
25
50
VBG (V)
75
VIG = 5 V
Fig 6. Supply current characteristics: battery-ground operating current as a function of battery-ground voltage;
typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
7 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa39
03pa38
4
20
IL
(A)
IS
(mA)
3
15
2
10
1
5
0
0
3
2
1
0
4
VSG (V)
VBL(TO)
0
10
5
15
20
VBL (V)
VBG = 13 V; VIG = 5 V; Tj = 25 °C
VBG = 16 V; VIG = 5 V; Tj = 25 °C (the device trips after
±200 µs, and the status goes LOW).
Fig 7. Status current as a function of status-ground
voltage; typical values.
03pa36
3.5
Fig 8. Load current limiting as a function of
battery-load voltage; typical values.
03pa37
2.5
IB
(µA)
VIG
(V)
3
2
max
1.5
2.5
VIG (ON)
2
1
VIG (OFF)
1.5
1
-50
0.5
min
0
50
100
150
200
Tj (°C)
9 V ≤ VBG ≤ 16 V
0
-50
50
100
200
150
Tj (°C)
VBG = 16 V
Fig 9. Input-source threshold voltage as a function of
junction temperature.
Fig 10. Supply quiescent current as a function of
junction temperature; typical values.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
0
Rev. 02 — 06 June 2002
8 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
03pa40
30
VBL(TO)
max
(V)
typ
20
min
10
0
10
0
20
30
50
40
VBG (V)
VIG = 5 V; −40 °C ≤ Tj ≤ +150 °C
Fig 11. Battery-load threshold voltage as a function of battery-ground voltage.
8. Dynamic characteristics
Table 7:
Switching characteristics
Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω. Figure 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
to 10% VL
-
50
80
µs
Turn-on measured from the input going HIGH
td(on)
turn-on delay time
dV/dton
rising slew rate
30 to 70% VL
-
0.5
1.0
V/µs
ton
turn-on switching time
to 90% VL
-
85
160
µs
to 90% VL
-
50
80
µs
Turn-off measured from the input going LOW
td(off)
turn-off delay time
dV/dtoff
falling slew rate
70 to 30% VL
-
0.8
1.2
V/µs
toff
turn-off switching time
to 10% VL
-
70
120
µs
Table 8:
Status response times
Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Measured from when the input goes HIGH
td(sc)
short circuit response time
VBL > VBL(TO); Figure 16
-
180
250
µs
td(lc)
low current detect response time
IL < IL(LC); Figure 15
-
200
-
µs
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
9 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Table 9:
Capacitances
Tmb = 25 °C; f = 1 MHz; VIG = 0 V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cig
input capacitance
VBG = 13 V
-
15
20
pF
Cbl
output capacitance
VBL = 13 V
-
130
185
pF
Csg
status capacitance
VSG = 5 V
-
11
15
pF
ton
toff
90%
VL
dV/dton
dV/dtoff
10%
0V
RS
5V
VBG
RI
VSG
P
0V
VSG
LL
VL
VIG
5V
VIG
RL
0
03pa51
03pa45
VBG = 13 V; VIG = 5 V and Tj = 25 °C
Fig 12. Schematic drawing of the switching circuit.
VL
Fig 13. Resistive switching waveforms and definitions.
0V
IL(LC)
EBL(CL)
ton
IL
toff
90%
VL
0V
0V
5V
VSG
10%
td(lc)
5V
0.7 V
0V
VSG
0.7 V
0V
5V
5V
VIG
VIG
0
0
03pa50
03pa48
Fig 14. Switching a large inductive load.
Fig 15. Low current detection waveforms.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
10 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
td(sc)
IL
0V
5V
VSG
0.7 V
0V
5V
VIG
0
03pa49
VBL ≥ VBL(TO)
Fig 16. Short circuit protection waveforms.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
11 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads
(one lead cropped)
SOT426
A
A1
E
D1
mounting
base
D
HD
3
1
2
4
e
e
Lp
5
b
e
c
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
1.70
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT426
Epoxy meets UL94 V0 at 1/8’’. Net mass: 1.5g. For soldering guidelines and surface mount footprint design, please refer to
Data Handbook SC18.
Fig 17. SOT426.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
12 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
Plastic single-ended package; heatsink mounted; 1 mounting hole;
5-lead TO-220 lead form option
SOT263B-01
E
p1
A
∅p
A1
q
D1
mounting
base
D
L3
L1
R
L
L4
m
1
L2
5
e
b
R
w M
c
Q
Q1
Q2
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
mm
4.5
4.1
A1
b
1.39 0.85
1.27 0.70
c
D
D1
E
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
e
L
L1
L2
L3(1)
1.7
9.8
9.7
5.9
5.3
5.2
5.0
2.4
1.6
L4(2)
max.
m
∅p
p1
q
Q
Q1
Q2
R
w
0.5
0.8
0.6
3.8
3.6
4.3
4.1
3.0
2.7
2.0
4.5
8.2
0.5
0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
SOT263B-01
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
5-lead (option)
TO-220
ISSUE DATE
01-01-11
Refer to mounting instructions for TO-220 packages. Epoxy meets UL94 VO at 1/8’’. Net mass: 2g
Fig 18. SOT263B-01.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
13 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
10. Revision history
Table 10:
Revision history
Rev Date
02
20020606
CPCN
Description
-
Product data (9397 750 09384); supersedes Product specification BUK208-50Y_1
(Rev 2.000) of March 2001 and Product specification BUK213-50Y_1 (Rev 2.000) of
March 2001.
Modifications:
•
The format of this specification has been redesigned to comply with Philips
Semiconductors new presentation and information standard.
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Product data
Rev. 02 — 06 June 2002
14 of 16
BUK208-50Y; BUK213-50Y
Philips Semiconductors
Single channel high-side TOPFET™
11. Data sheet status
Data sheet status[1]
Product status[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TOPFET — is a trademark of Koninklijke Philips Electronics N.V.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
Product data
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09384
Rev. 02 — 06 June 2002
15 of 16
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET™
Contents
1
1.1
1.2
1.3
1.4
2
2.1
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 06 June 2002
Document order number: 9397 750 09384
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