BUK6213-30A TrenchMOS™ Intermediate level FET Rev. 02 — 22 September 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features ■ Low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Intermediate level compatible. 1.3 Applications ■ Automotive systems ■ Motors, lamps and solenoids ■ 12 V loads ■ General purpose power switching. 1.4 Quick reference data ■ EDS(AL)S ≤ 267 mJ ■ ID ≤ 55 A ■ RDSon = 10 mΩ (typ) ■ Ptot ≤ 102 W. 2. Pinning information Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb [1] g MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the package. s BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 3. Ordering information Table 2: Ordering information Type number Package BUK6213-30A Name Description Version - Plastic single-ended surface mounted package SOT428 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) drain current (DC) ID Conditions Min Max Unit - 30 V RGS = 20 kΩ - 30 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 64 A [2] - 55 A Tmb = 100 °C; VGS = 10 V; Figure 2 [1] - 45 A - 257 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Ptot total power dissipation - 102 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C [1] - 64 A [2] - 55 A Tmb = 25 °C; pulsed; tp ≤ 10 µs - 257 A unclamped inductive load; ID = 55 A; VDS ≤ 30 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C - 267 mJ Source-drain diode reverse drain current (DC) IDR IDRM peak reverse drain current Tmb = 25 °C Avalanche ruggedness EDS(AL)S [1] [2] non-repetitive drain-source avalanche energy Current is limited by power dissipation chip rating Continuous current is limited by bondwires. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 2 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 03na19 120 03nk64 80 Capped at 55 A due to bondwires ID (A) Pder (%) 60 80 40 40 20 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03nk62 103 ID (A) Limit RDSon = VDS/ID tp = 10 µ s 102 100 µ s 1 ms Capped at 55 A due to bondwires 10 DC 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 3 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-mb) thermal resistance from junction to mounting base Figure 4 Min Typ Max Unit - 71.4 - K/W - - 1.4 K/W 5.1 Transient thermal impedance 03nk63 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 10-1 0.05 0.02 10-2 δ= P single shot T t tp 10-3 10-6 tp T 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 4 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 30 - - V Tj = −55 °C 27 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1 1.8 3 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 3.5 V Tj = 25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 10 13 mΩ Tj = 175 °C - - 25 mΩ VGS = 4.5 V; ID = 10 A - 15 20 mΩ VDS = 30 V; VGS = 0 V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge VGS = 10 V; VDS = 24 V; ID = 25 A; Figure 14 - 44 - nC Qg(tot) total gate charge - 26 - nC Qgs gate-source charge VGS = 5 V; VDS = 24 V; ID = 25 A; Figure 14 - 7 - nC Qgd gate-drain (Miller) charge - 14 - nC Ciss input capacitance - 1490 1986 pF Coss output capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 - 505 606 pF Crss reverse transfer capacitance - 325 445 pF - 12 - nS - 95 - nS VDS = 25 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω td(on) turn-on delay time tr rise time td(off) turn-off delay time - 75 - nS tf fall time - 105 - nS Ld internal drain inductance measured from drain to center of die - 2.5 - nH Ls internal source inductance measured from source lead to source bond pad - 7.5 - nH © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 5 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 0.85 1.2 V Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 25 V 49 - ns 27 - nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data - Rev. 02 — 22 September 2003 6 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 03nk59 200 20 10 150 RDSon (mΩ) 25 Label is VGS (V) 9 ID (A) 14 8 12 7.5 7 03nk58 30 6.5 20 6 100 5.5 15 5 4.5 50 10 4 3.5 3 0 0 2 4 5 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 0 15 20 VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03nk60 30 label is VGS (V) 03aa27 2 a 5 4.5 4 3.5 20 10 Tj = 25 °C; ID = 25 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. RDSon (mΩ) 5 1.5 10 1 20 10 0.5 0 0 0 50 100 150 200 ID (A) Tj = 25 °C; tp = 300 µs -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data 0 Rev. 02 — 22 September 2003 7 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 03nk65 4 03nk66 10-1 VGS(th) (V) ID (A) 10-2 3 min max typ max 10-3 2 10-4 typ 1 10-5 min 10-6 0 -60 0 60 120 Tj (°C) 180 0 1 2 3 4 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03nk56 40 gfs (S) Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nk61 3000 C (pF) 30 Ciss 2000 20 Coss 1000 10 Crss 0 0 10 20 30 ID (A) 40 0 10-1 102 10 VDS (V) Tj = 25 °C; VDS = 25 V VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data 1 Rev. 02 — 22 September 2003 8 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 03nk57 50 03nk55 10 ID (A) VGS (V) 40 8 30 6 20 4 10 VDD = 14 V VDD = 24 V 2 Tj = 175 °C Tj = 25 °C 0 0 0 1 2 3 4 5 0 10 VGS (V) 20 30 40 50 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03nk54 100 IS (A) 75 50 25 Tj = 175 °C Tj = 25 °C 0 0.0 0.4 0.7 1.1 1.4 VSD (V) VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 9 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 seating plane y A E A2 A A1 b2 E1 mounting base D1 D HE L2 2 L1 L 1 3 b1 w M A b c e e1 0 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1(1) A2 b b1 b2 c D D1 min. E mm 2.38 2.22 0.65 0.45 0.93 0.73 0.89 0.71 1.1 0.9 5.46 5.26 0.4 0.2 6.22 5.98 4.0 6.73 6.47 E1 e e1 4.81 2.285 4.57 4.45 HE L L1 min. L2 w y max. 10.4 9.6 2.95 2.55 0.5 0.9 0.5 0.2 0.2 Note 1. Measured from heatsink back to lead. OUTLINE VERSION SOT428 REFERENCES IEC JEDEC JEITA TO-252 SC-63 EUROPEAN PROJECTION ISSUE DATE 99-09-13 01-12-11 Fig 16. SOT428 (D-PAK). © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 10 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 8. Revision history Table 6: Revision history Rev Date 02 20030922 CPCN Description - Product data (9397 750 12028) Modifications: • 01 20030825 - Correction made to descriptive and alternative title. Text changed from ‘TrenchMOSTM Logic level FET’ to ‘TrenchMOSTM Intermediate level FET’. Product data (9397 750 11752) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Product data Rev. 02 — 22 September 2003 11 of 13 BUK6213-30A Philips Semiconductors TrenchMOS™ Intermediate level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 12028 Rev. 02 — 22 September 2003 12 of 13 Philips Semiconductors BUK6213-30A TrenchMOS™ Intermediate level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 September 2003 Document order number: 9397 750 12028