Seme LAB BUL68A Advanced distributed base design high voltage high speed npn silicon power transistor Datasheet

SEME
BUL68A
LAB
MECHANICAL DATA
Dimensions in mm
2.18 (0.086)
2.44 (0.096)
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
0.84 (0.033)
0.94 (0.037)
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
1.09 (0.043)
1.30 (0.051)
Designed for use in
electronic ballast applications
5.97 (0.235)
6.22 (0.245)
1
2
3
•
•
•
•
0.76 (0.030)
1.14 (0.045)
8.89 (0.350)
9.78 (0.385)
0.64 (0.025)
0.89 (0.035)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
0.46 (0.018)
0.61 (0.024)
FEATURES
1.04 (0.041)
1.14 (0.045)
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
I-PAK(TO251)
Pin 1 – Base
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
Pin 2 – Collector
Pin 3 – Emitter
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
350V
VCEO
Collector – Emitter Voltage (IB = 0)
160V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC
Continuous Collector Current
7A
IC(PK)
Peak Collector Current
12A
IB
Base Current
3A
Ptot
Total Dissipation at Tcase = 25°C
Tstg
Operating and Storage Temperature Range
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
20W
–55 to +150°C
Prelim. 2/97
SEME
BUL68A
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
VCEO(sus)
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage IC = 10mA
160
V(BR)CBO
Collector – Base Breakdown Voltage
IC = 1mA
350
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 1mA
10
ICBO
Collector – Base Cut–Off Current
ICEO
Collector – Emitter Cut–Off Current
IEBO
Emitter Cut–Off Current
hFE*
DC Current Gain
Typ.
Unit
V
VCB = 350V
IB = 0
Max.
10
TC = 125°C
100
VCE = 150V
100
VEB = 9V
10
IC = 0
TC = 125°C
IC = 0.3A
VCE = 4V
30
90
IC = 2A
VCE = 4V
25
60
IC = 4A
VCE = 1V
8
100
µA
µA
µA
—
TC = 125°C
VCE(sat)*
IC = 1A
IB = 0.1A
0.1
0.2
Collector – Emitter Saturation Voltage IC = 3A
IB = 0.3A
0.3
0.6
IC = 4A
IB = 0.4A
1
1.5
IC = 3A
IB = 0.3A
1.1
IC = 4A
IB = 0.4A
1.4
V
VBE(sat)*
Base – Emitter Saturation Voltage
ft
DYNAMIC CHARACTERISTICS
Transition Frequency
IC = 0.2A
VCE = 4V
20
MHz
Cob
Output Capacitance
VCB = 10V
f = 1MHz
30
pF
V
* Pulse test tp = 300µs , δ < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
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