SEME BUL76B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage(IE=0) 250V VCEO Collector – Emitter Voltage (IB = 0) 100V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 70A IB Base Current 14A Ptot Total Dissipation at Tcase = 25°C 85W Tj Junction Temperature Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 150°C –55 to +150°C Prelim. 2/97 SEME BUL76B LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 100mA 100 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 250 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* VCE(sat)* Typ. Max. V VCB = 240V 10 TC = 125°C 100 VCE = 90V 100 VEB = 9V 10 TC = 125°C 100 IC = 1A VCE = 1V 45 90 IC = 15A VCE = 1V 25 60 IC = 10A VCE = 5V 50 80 IC = 18A VCE = 5V 40 70 IC = 10A IB = 1A 0.5 Collector – Emitter Saturation Voltage IC = 20A IB = 2A 0.8 IC = 20A IB = 4A 0.7 IC = 10A IB = 1A 1.2 IC = 20A IB = 2A 1.5 DC Current Gain Unit µA µA µA — V VBE(sat)* Base – Emitter Saturation Voltage ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 10V f = 1MHz 200 pF V * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97