BUL98B MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 1.63 (0.064) 1.52 (0.060) DESCRIPTION 12.19 (0.48) 11.18 (0.44) The BUL98B is a silicon multi-epitaxial mesa NPN transistor in a JEDEC TO-3 metal case, intended for military and industrial applications. 30.40 (1.197) 29.90 (1.177) 4.09 (0.161) 3.84 (0.151) 2 Pls 2 11.18 (0.440) 10.67 (0.420) • CECC SCREENING OPTIONS 1 • SPACE QUALITY LEVELS OPTIONS • JAN LEVEL SCREENING OPTIONS 16.97 (0.668) 16.87 (0.664) PIN 1 – Base • HIGH SPEED SWITCHING (TO-3) PIN 2 – Emitter CASE – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCER Collector - Emitter Voltage (RBE ` 10 ) VCES VCEO VEBO IC ICM ICP IB IBM Ptot TSTG TJ Collector - Base Voltage (VBE = 0V) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Collector Current Collector Peak Current non (tp = 5ms) Collector Peak Current non Rep (tp = 20µs) Base Current Base Peak Current (tp = 5ms) Total Power Dissipation Tcase < 25°C Storage Temperature Junction Temperature 850V 850V 400V 7V 25A 60A 80A 8A 30A 250W -65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4031 Issue 1 BUL98B ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. VCEO(sus)* Collector-Emitter Voltage (Sustaining) IC=200mA VCER(sus)* Collector-Emitter Voltage (Sustaining) IC=1A VCE(sat)* Collector-Emitter Saturation Voltage IC=20A L=2mH IB=4A VBE(sat)* Base-Emitter Saturation Voltage IC=20A IB=4A ICER Collector Cutoff Current ICES Collector Cutoff Current ICEO Collector Cutoff Current VCE=VCEO IEBO Emitter Cutoff Current VEB=5V ton Turn-On Time VCC=150V 1 ts Storage Time 3 tf Fall Time IC=20A IB1=IB2=4A R JC Thermal Resistance Junction to Case 400 VCE = VCES VBE =10Ω Tcase =125°C VCE = VCES VBE = 0V Unit Tcase =125°C IC=0 850 1.5 V 1.6 1 µA 8 mA 400 µA 4 mA 2 mA 2 mA µs 0.8 0.7 °C/W * Pulsed: Pulse Duration = 300µs, duty cycle = 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4031 Issue 1