Silicon Monolithic IC STRUCTURE PRODUCT BUXXTA2WHFV 1/4 Silicon Monolithic Integrated Circuit CMOS-type Series Regulator ＢＵｘｘＴＡ２ＷＨＦＶSeries NAME ○ BLOCK DIAGRAM and APPLICATION CIRCUIT VIN VIN 3 Cin VREF 2 + GND PIN No. 1 2 3 4 5 VOUT VOUT 4 OCP Co VSTBY STBY 1 PIN NAME STBY GND VIN VOUT N.C. DESCRIPTION OUTPUT CONTROL Pin (High: ON, Low: OFF) GROUND Pin INPUT Pin OUTPUT Pin No Connect STBY 5 N.C. Cin･･･1.0 μF (Ceramic) Discharge Co ･･･1.0 μF (Ceramic) Fig.1 BLOCK DIAGRAM and APPLICATION CIRCUIT ○ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Symbol Limit VMAX Power Supply Voltage -0.3 ～ +6.5 Power Dissipation Pd 410 (*1) Maximum junction temperature TjMAX +125 Operating Temperature Range Topr -40 ～ +85 Storage Temperature Range Tstg -55 ～ +125 (*1 )Pd derated at 4.1mW/℃ at temperatures above Ta = 25℃, mounted on 70×70×1.6 mm glass-epoxy PCB. Unit V mW ℃ ℃ ℃ ○ RECOMMENDED OPERATING RANGE (not to exceed Pd) PARAMETER Power Supply Voltage Maximum Output Current Symbol VIN IMAX Limit 2.5 ～ 5.5 Unit V 200 mA Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If there is any uncertainty in translation version of this document, official version takes priority. Nov./05/2008 A TSZ02201-BUXXTA2WHFV-1-2 Silicon Monolithic IC ● OPERATING CONDITIONS PARAMETER Symbol MIN. Input Capacitor Cin 0.5(*2) Output Capacitor Co 0.5(*2) TYP. 1.0 1.0 BUXXTA2WHFV MAX. - Unit μF μF 2/4 CONDITION Ceramic capacitor recommended (*2) Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias, changing as time progresses characteristic. ● ELECTRICAL CHARACTERSTICS (Ta=25℃, VIN= VOUT + 1.0 V (VOUT=1.5V, 1.8V, 2.3V : VIN=3.5V), STBY=1.5 V, Ci=1.0 μF, Co=1.0 μF, unless otherwise noted.) PARAMETER Symbol Limit TYP. MIN. MAX. Unit Conditions Overall Device Output Voltage VOUT Operating Current IIN Operating Current ISTBY (STBY) Ripple Rejection Ratio VOUT×1.01 VOUT+25mV V RR IOUT=10μA，VOUT≧2.5V IOUT=10μA，VOUT＜2.5V - 40 95 μA IOUT=0mA - - 1 μA STBY=0V 55 - dB 65 VRR=-20dBv,fRR=1kHz,IOUT=10mA 1.5V≦VOUT≦1.8V VRR=-20dBv,fRR=1kHz,IOUT=10mA 2.3V≦VOUT 450 900 mV VOUT=2.3V (VIN=0.98*VOUT,IOUT=200mA) - 400 800 mV 2.5V≦VOUT≦2.6V (VIN=0.98*VOUT,IOUT=200mA) - 360 720 mV 2.7V≦VOUT≦2.85V (VIN=0.98*VOUT,IOUT=200mA) - 330 660 mV 2.9V≦VOUT≦3.1V (VIN=0.98*VOUT,IOUT=200mA) - 300 600 mV 3.2V≦VOUT≦3.4V (VIN=0.98*VOUT,IOUT=200mA) - 2 10 20 80 mV mV VIN=VOUT+1.0V to 5.5V,IOUT=10μA ILMAX ISHORT 220 20 350 70 700 150 mA mA Vo=VOUT*0.8 RDSC 20 50 80 Ω VIN=4.0V, STBY=0V RSTB 500 1000 2000 kΩ ON VSTBH 1.5 - 5.5 V Output Voltage ON OFF VSTBL -0.3 - 0.3 V Output Voltage OFF Limit Current Short Current Standby Block Resistor STBY Pin Pull-down Resistor Voltage VOUT 70 VSAT VDL Line Regulation VDLO Load Regulation Over-current Protection (OCP) Control VOUT-25mV - Dropout Voltage Discharge VOUT×0.99 IOUT=0.01mA to 100mA Vo=0V ●This product is not designed for protection against radioactive rays. A TSZ02201-BUXXTA2WFHV-1-2 Silicon Monolithic IC BUXXTA2WHFV ○ Device Name and Marking ○ Power Dissipation Curves 0.6 Conditions 0.41W Device Name: BUXXTA2WHFV Mounted on PCB. Size: 70mm×70mm×1.6mm 0.4 Pd(W) a symbol 0.2 0 3/4 0 25 50 75 85 100 125 150 Ta(℃) Fig.2 Pd reduction (example) a Pd is changed by mount condition. Please refer the technical note about more detailed information of Pd. ○ Package dimensions (HVSOF5) Description Output XX Voltage Marking 15 1.5V typ. BA 18 1.8V typ. BB 23 2.3V typ. BC 25 2.5V typ. BD 26 2.6V typ. BE 27 2.7V typ. BF 28 2.8V typ. BG 2J 2.85V typ. BH 29 2.9V typ. BJ 30 3.0V typ. BK 31 3.1V typ. BL 32 3.2V typ. BM 33 3.3V typ. BN 34 3.4V typ. BP Device Mark Lot No. Fig.3 A Package dimensions (Unit: mm) TSZ02201-BUXXTA2WHFV-1-2 Silicon Monolithic IC BUXXTA2WHFV 4/4 ○Operation Notes 1.) Absolute maximum ratings Use of the IC in excess of absolute maximum ratings (such as the input voltage or operating temperature range) may result in damage to the IC. Assumptions should not be made regarding the state of the IC (e.g., short mode or open mode) when such damage is suffered. If operational values are expected to exceed the maximum ratings for the device, consider adding protective circuitry (such as fuses) to eliminate the risk of damaging the IC. 2.) GND potential The potential of the GND pin must be the minimum potential in the system in all operating conditions. Never connect a potential lower than GND to any pin, even if only transiently. 3.) Thermal design Use a thermal design that allows for a sufficient margin for that package power dissipation rating (Pd) under actual operating conditions. 4.) Inter-pin shorts and mounting errors Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting or shorts between pins may result in damage to the IC. 5.) Operation in strong electromagnetic fields Strong electromagnetic fields may cause the IC to malfunction. Caution should be exercised in applications where strong electromagnetic fields may be present. 6.) Common impedance Wiring traces should be as short and wide as possible to minimize common impedance. Bypass capacitors should be use to keep ripple to a minimum. 7.) Voltage of STBY pin To enable standby mode for all channels, set the STBY pin to 0.3 V or less, and for normal operation, to 1.5 V or more. Setting STBY to a voltage between 0.3 and 1.5 V may cause malfunction and should be avoided. Keep transition time between high and low (or vice versa) to a minimum. Additionally, if STBY is shorted to VIN, the IC will switch to standby mode and disable the output discharge circuit, causing a temporary voltage to remain on the output pin. If the IC is switched on again while this voltage is present, overshoot may occur on the output. Therefore, in applications where these pins are shorted, the output should always be completely discharged before turning the IC on. 8.) Over-current protection circuit (OCP) This IC features an integrated over-current and short-protection circuitry on the output to prevent destruction of the IC when the output is shorted. The OCP circuitry is designed only to protect the IC from irregular conditions (such as motor output shorts) and is not designed to be used as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. 9.) Thermal shutdown circuit (TSD) This IC also features a thermal shutdown circuit that is designed to turn the output off when the junction temperature of the IC exceeds 175℃. This feature is intended to protect the IC only in the event of thermal overload and is not designed to guarantee operation or act as an active security device for the application. Therefore, applications should not be designed under the assumption that this circuitry will engage. A Cout=1.0μF Cin=1.0μF Temp=+25℃ 100 ESR[Ω] ESR [Ω ] 10.) Input/output capacitor Capacitors must be connected between the input/output pins and GND for stable operation, and should be physically mounted as close to the IC pins as possible (refer to figure 4). The input capacitor helps to counteract increases in power supply impedance, and increases stability in applications with long or winding power supply traces. The output capacitance value is directly related to the overall stability and transient response of the regulator, and should be set to the largest possible value for the application to increase these characteristics. During design, keep in mind that in general, ceramic capacitors have a wide range of tolerances, temperature coefficients and DC bias characteristics, and that their capacitance values tend to decrease over time. Confirm these details before choosing appropriate capacitors for your application.(Please refer the technical note, regarding ceramic capacitor of recommendation) Unstable region 10 1 Stable region 0.1 0.01 0 50 100 150 200 IOUT [mA] Fig.4 Stable region (example) TSZ02201-BUXXTA2WHFV-1-2