BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 100L 50 V 60 A 0.018 Ω TO-220 AB C67078-S1354-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 101 °C Values Unit A 60 IDpuls Pulsed drain current TC = 25 °C 240 EAS Avalanche energy, single pulse mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C 250 Reverse diode dv/dt dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C Semiconductor Group V W 250 1 07/96 BUZ 100L Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 0.6 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = -40 °C V 50 - - 1.2 1.6 2 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 °C - 10 100 µA Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 30 A Semiconductor Group nA - 2 0.014 0.018 07/96 BUZ 100L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 30 A Input capacitance 25 pF - 2800 3750 - 830 1250 - 350 525 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 45 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 45 70 - 140 210 - 350 470 - 100 135 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 100L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 240 V 1.15 1.8 trr ns - 85 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 60 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 120 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 130 - 07/96 BUZ 100L Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V Power dissipation Ptot = ƒ(TC) 260 65 W A 55 220 Ptot ID 200 50 180 45 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 0 0 20 40 60 80 100 120 140 °C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C °C 180 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 10 3 K/W A t = 30.0µs p /ID ID = 10 2 V D ZthJC S 10 -1 100 µs ) on S( D R 1 ms 10 -2 D = 0.50 0.20 10 ms 10 1 0.10 10 -3 0.05 single pulse 0.02 DC 0.01 10 0 0 10 10 1 V 10 10 -4 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 100L Typ. output characteristics ID = ƒ(VDS) Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 30 A, VGS = 5 V parameter: tp = 80 µs 140 0.050 Ptot = 250W A l kj i h Ω g 120 ID VGS [V] a 2.0 110 f 100 90 80 e 70 60 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 50 d j 7.0 40 k 8.0 l 10.0 30 0.040 RDS (on) 0.035 0.030 0.025 98% 0.020 typ 0.015 c 0.010 20 10 b 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.005 V 0.000 -60 5.0 VDS 60 100 °C 180 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 60 60 S A 50 50 gfs 45 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 20 Tj Typ. transfer characteristics ID = f (VGS) ID -20 0 1 2 3 Semiconductor Group 4 5 6 7 8 V 10 VGS 6 0 10 20 30 40 A 60 ID 07/96 BUZ 100L Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.055 a b c 4.6 d Ω V 4.0 0.045 RDS (on) VGS(th) 3.6 0.040 3.2 0.035 2.8 0.030 2.4 98% 0.025 2.0 typ 0.020 1.6 e g 0.015 i f 2% h j 1.2 0.010 0.8 VGS [V] = 0.005 a 2.0 2.5 3.0 b 3.5 0.000 0 c 4.0 20 d 4.5 40 e f 5.0 5.5 g 6.0 60 h i j 7.0 8.0 10.0 80 0.4 A 0.0 -60 120 -20 20 60 100 °C ID 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF Ciss 10 2 10 3 Coss 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 100L Avalanche energy EAS = ƒ(Tj ) parameter: ID = 60 A, VDD = 25 V RGS = 25 Ω, L = 70 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 90 A 260 16 mJ V 220 EAS VGS 200 12 180 160 10 140 8 120 100 0,2 VDS max 0,8 VDS max 6 80 4 60 40 2 20 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 20 40 60 80 100 120 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 07/96 160 BUZ 100L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96