BUZ 100SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 100SL-4 55 V 7.4 A 0.023 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 °C Values Unit A 7.4 Pulsed drain current one channel active IDpuls TA = 25 °C 29.6 EAS Avalanche energy, single pulse mJ ID = 7.4 A, VDD = 25 V, RGS = 25 Ω L = 13.8 mH, Tj = 25 °C 380 Reverse diode dv/dt dv/dt kV/µs IS = 7.4 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 °C ± 14 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 01/Oct/1997 BUZ 100SL-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd Thermal resistance, junction - ambient 2) RthJA - - 62.5 K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 VGS(th) VGS=VDS, ID = 130 µA Zero gate voltage drain current V IDSS µA VDS = 55 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 7.4 A Semiconductor Group nA - 2 0.019 0.023 01/Oct/1997 BUZ 100SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 7.4 A Input capacitance 20 pF - 2130 2660 - 600 750 - 320 400 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Rise time - 37 55 - 67 100 - 91 140 - 42 65 tr VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 7.4 A RG = 2.3 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V 4.5 - 58 86 - 93 140 V(plateau) VDD = 40 V, ID = 7.4 A Semiconductor Group 3 Qg(total) VDD = 40 V, ID = 7.4 A, VGS =0 to 10 V Gate plateau voltage - Qg(5) VDD = 40 V, ID = 7.4 A, VGS =0 to 5 V Gate charge total nC V - 3 2.92 01/Oct/1997 BUZ 100SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed - - 29.6 V 0.9 1.6 trr ns - 75 115 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 7.4 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 14.8 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A µC - 4 0.21 0.315 01/Oct/1997 BUZ 100SL-4 Preliminary data Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 2.8 7.5 W A 2.4 6.5 ID 2.2 6.0 5.5 2.0 5.0 1.8 4.5 1.6 4.0 1.4 3.5 1.2 3.0 1.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.0 0.5 0.0 0 20 40 60 80 100 120 140 °C 180 TA Semiconductor Group 0 20 40 60 80 100 120 140 °C 180 TA 5 01/Oct/1997 BUZ 100SL-4 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.070 17 lkj Ptot = 2W h ie A gf d ID a Ω 0.060 VGS [V] a 2.5 14 c 12 10 8 6 4 RDS (on) 0.055 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 0.035 h 6.0 0.030 i 6.5 j 7.0 0.025 k 8.0 0.020 b l 10.0 0.050 0.045 0.040 b f h g i j 0.015 c d e 0.010 VGS [V] = 2 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.005 0.000 0 5.0 a 2.5 3.0 3.5 b 4.0 2 c 4.5 4 d 5.0 e f 5.5 6.0 6 g 6.5 8 h i j 7.0 8.0 10.0 10 12 A 15 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 01/Oct/1997 BUZ 100SL-4 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 7.4 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 130 µA 0.065 4.6 Ω V 0.055 4.0 RDS (on) 0.050 VGS(th) 0.045 3.6 3.2 0.040 2.8 0.035 2.4 98% 0.030 98% 2.0 typ 0.025 typ 1.6 0.020 2% 1.2 0.015 0.010 0.8 0.005 0.4 0.000 -60 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF Ciss 10 2 Coss 10 1 10 3 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 01/Oct/1997 BUZ 100SL-4 Preliminary data Avalanche energy EAS = ƒ(Tj) parameter: ID = 7.4 A, VDD = 25 V RGS = 25 Ω, L = 13.8 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 7 A 400 16 mJ V EAS 320 VGS 12 280 10 240 200 8 160 0,2 VDS max 6 0,8 VDS max 120 4 80 2 40 0 20 40 60 80 100 120 140 °C 0 0 180 Tj 20 40 60 80 100 nC 130 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 01/Oct/1997