BUZ 101SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 101SL-4 55 V 4.1 A 0.075 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 °C Values Unit A 4.1 Pulsed drain current one channel active IDpuls TA = 25 °C 16.4 EAS Avalanche energy, single pulse mJ ID = 4.1 A, VDD = 25 V, RGS = 25 Ω L = 10.7 mH, Tj = 25 °C 90 Reverse diode dv/dt dv/dt kV/µs IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 °C ± 14 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 02/Oct/1997 BUZ 101SL-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd Thermal resistance, junction - ambient 2) RthJA - - 62.5 K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 VGS(th) VGS=VDS, ID = 30 µA Zero gate voltage drain current V IDSS µA VDS = 55 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 4.1 A Semiconductor Group nA - 2 0.06 0.075 02/Oct/1997 BUZ 101SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 4.1 A Input capacitance 5 pF - 560 700 - 170 215 - 95 120 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8 Ω Rise time - 20 30 - 35 55 - 40 60 - 27 40 tr VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 4.1 A RG = 9.8 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V 2.1 - 15 22 - 24 36 V(plateau) VDD = 40 V, ID = 4.1 A Semiconductor Group 1.4 Qg(total) VDD = 40 V, ID = 4.1 A, VGS =0 to 10 V Gate plateau voltage - Qg(5) VDD = 40 V, ID = 4.1 A, VGS =0 to 5 V Gate charge total nC V - 3 2.98 02/Oct/1997 BUZ 101SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed - - 16.4 V 0.95 1.6 trr ns - 50 75 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4.1 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 8.2 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A nC - 4 80 120 02/Oct/1997 BUZ 101SL-4 Preliminary data Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 4.5 2.8 W A 2.4 Ptot ID 2.2 3.5 2.0 3.0 1.8 1.6 2.5 1.4 2.0 1.2 1.0 1.5 0.8 1.0 0.6 0.4 0.5 0.2 0.0 0.0 0 20 40 60 80 100 120 140 °C 180 TA Semiconductor Group 0 20 40 60 80 100 120 140 °C 180 TA 5 02/Oct/1997 BUZ 101SL-4 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 10 0.24 Ptot = 2W Ω l A ID ih k j gf d e 7 c 6 5 4 3 b b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b 0.20 RDS (on) 0.18 VGS [V] a 2.5 8 a 0.16 0.14 0.12 0.10 c 0.08 d e f g h ki j 0.06 2 0.04 VGS [V] = 1 0.02 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0.0 5.0 a 2.5 3.0 b 3.5 1.0 c 4.0 2.0 d 4.5 e f 5.0 5.5 3.0 4.0 g 6.0 h i 6.5 7.0 5.0 6.0 j 8.0 k 10.0 A 8.0 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 02/Oct/1997 BUZ 101SL-4 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 4.1 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 30 µA 0.22 4.6 Ω V 4.0 0.18 RDS (on) VGS(th) 3.6 0.16 3.2 0.14 2.8 0.12 2.4 98% 0.10 98% 2.0 typ 0.08 typ 1.6 2% 0.06 1.2 0.04 0.8 0.02 0.4 0.00 -60 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A C IF 10 3 10 1 Ciss Coss 10 2 10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 02/Oct/1997 BUZ 101SL-4 Preliminary data Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 4 A Avalanche energy EAS = f (Tj) parameter:ID=4.1A,VDD =25 V RGS =25 Ω , L = 10.7mH 100 16 mJ V EAS VGS 80 12 70 10 60 50 8 40 6 0,2 VDS max 0,8 VDS max 30 4 20 2 10 0 20 40 60 80 100 120 140 °C Tj 0 0 180 4 8 12 16 20 24 28 nC 34 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 02/Oct/1997