BUZ 104L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 104L 50 V 17.5 A 0.1 Ω TO-220 AB C67078-S1358-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 29 °C Values Unit A 17.5 IDpuls Pulsed drain current TC = 25 °C 70 EAS Avalanche energy, single pulse mJ ID = 17.5 A, VDD = 25 V, RGS = 25 Ω L = 114 µH, Tj = 25 °C 35 Reverse diode dv/dt dv/dt kV/µs IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TC = 25 °C Semiconductor Group V W 60 1 07/96 BUZ 104L Maximum Ratings Parameter Symbol Values Unit Operating temperature Tj -55 ... + 175 °C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC ≤ 2.5 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = -40 °C V 50 - - 1.2 1.6 2 VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1 µA VDS = 50 V, VGS = 0 V, Tj = -40 °C - 1 100 nA VDS = 50 V, VGS = 0 V, Tj = 150 °C - 10 100 µA Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 8.5 A Semiconductor Group nA - 2 0.085 0.1 07/96 BUZ 104L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 8.5 A Input capacitance 5 pF - 420 560 - 140 210 - 60 90 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 9.2 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 12 18 - 50 75 - 70 95 - 50 65 tr VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 104L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 70 V 1.15 1.8 trr ns - 55 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 17.5 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 35 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A nC - 4 25 - 07/96 BUZ 104L Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V Power dissipation Ptot = ƒ(TC) 18 65 W A 55 Ptot ID 50 45 14 12 40 10 35 30 8 25 6 20 4 15 10 2 5 0 0 0 20 40 60 80 100 120 140 °C 0 180 20 40 60 80 100 120 140 TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C °C 180 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 t = 20.0µs p K/W ZthJC 100 µs /I D A 10 0 R DS (o n) =V DS ID 1 ms 10 1 10 -1 D = 0.50 0.20 0.10 10 ms 0.05 10 -2 0.02 single pulse 10 0 0 10 DC 10 1 V 10 10 -3 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 104L Typ. output characteristics ID = ƒ(VDS) Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 8.5 A, VGS = 5 V parameter: tp = 80 µs 40 0.28 Ptot = 60W l A Ω k j i V GS [V] ID 32 2.0 h b 2.5 c 3.0 d 3.5 e 4.0 28 g 24 20 0.24 a f 4.5 f g 5.0 h 5.5 i j k 8.0 d l 10.0 16 e 12 RDS (on)0.22 0.20 0.18 0.16 0.14 98% 6.0 0.12 typ 7.0 0.10 0.08 8 0.06 c 0.04 4 0 0.0 0.02 0.00 -60 b a 1.0 2.0 3.0 4.0 5.0 6.0 V 7.5 VDS -20 20 60 100 °C 180 Tj Typ. forward transconductance gfs = f (ID) Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 10 40 S A ID gfs 30 8 7 6 25 5 20 4 15 3 10 2 5 0 0 1 0 1 2 3 Semiconductor Group 4 5 6 7 8 V 10 VGS 6 0 5 10 15 20 25 A ID 07/96 35 BUZ 104L Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.32 4.6 a b c d e f g V Ω 4.0 RDS (on) 0.24 VGS(th) 3.6 3.2 0.20 2.8 2.4 0.16 98% 2.0 typ 0.12 1.6 h 2% i 0.08 1.2 j 0.8 0.04 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 0.4 0.00 0 4 8 12 16 20 24 28 0.0 -60 32 A 38 -20 20 60 100 °C ID 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss Coss 10 2 10 0 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 07/96 3.0 BUZ 104L Avalanche energy EAS = ƒ(Tj ) parameter: ID = 17.5 A, VDD = 25 V RGS = 25 Ω, L = 114 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 26 A 36 16 mJ EAS V VGS 28 12 24 10 20 0,2 VDS max 8 0,8 VDS max 16 6 12 4 8 2 4 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 4 8 12 16 nC Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 07/96 24 BUZ 104L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96